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A kind of X-ray detector and its manufacturing method

An X-ray and detector technology, applied in the field of X-ray detection, can solve problems affecting the scanning speed of detector imaging arrays, etc., and achieve high signal-to-noise ratio, high-gain signal-to-noise ratio, and fast recovery effects

Active Publication Date: 2020-11-27
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the existence of a large number of deep-level defects in these materials, it takes a long time (more than tens of seconds) for the current to return to the initial state after irradiation, which greatly affects the scanning speed of the detector imaging array.

Method used

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  • A kind of X-ray detector and its manufacturing method
  • A kind of X-ray detector and its manufacturing method
  • A kind of X-ray detector and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0049] exist Figure 4 In the shown preparation method flowchart, its step comprises:

[0050] Step 410, preparing a bottom electrode on the substrate;

[0051] Specifically, the substrate 11 is ultrasonically cleaned and dried, and the required bottom electrode structure is etched on the substrate 11 by using ultraviolet exposure, development, and fixing techniques, and then placed in a vacuum chamber to deposit the bottom electrode material, and then the remaining The photoresist and the electrode material attached to the photoresist, and the electrode material in the photoresist pattern area are reserved to form the bottom electrode. Alternatively, the electrode structure of the bottom electrode 12 can also be fabricated directly on the substrate 11 by means of screen printing or inkjet printing.

[0052] Step 420, preparing an insulating layer covering the bottom electrode and the substrate;

[0053] Specifically, the insulating layer medium is prepared by vacuum deposi...

Embodiment 1

[0075] The substrate used in this embodiment is a quartz glass substrate. A quartz substrate is ultrasonically cleaned with organic reagents such as acetone and alcohol, and dried with dry high-purity nitrogen gas. The bottom electrode structure is etched on the substrate using ultraviolet exposure, development, and fixing techniques, and then put into magnetron sputtering. A 80nm Cr thin film is deposited in the chamber as the bottom electrode, and then the remaining photoresist and the electrode material attached to the photoresist are removed to complete the preparation of the bottom electrode.

[0076] Put the quartz glass substrate with patterned Cr electrode into the atomic layer deposition system and deposit 100nm Al 2 o 3 The insulating layer, and then use ultraviolet exposure, development, and fixing techniques to photoetch the bottom electrode lead interface on the insulating layer, and etch the insulating layer material in the lead interface area to the bottom elec...

Embodiment 2

[0086] Prepare the X-ray detector of the present invention in the same manner as in Example 1, the difference is that the substrate selects commercial SiO x / Si substrate, so there is no need to prepare the bottom electrode and insulating layer materials, directly on the SiO x / Deposit 100nm Ga on Si substrate 2 o 3 films and their subsequent fabrication.

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Abstract

The invention discloses X-ray detectors and production methods thereof. An X-ray detector comprises a substrate, a bottom electrode prepared on the substrate, an insulation layer covering the bottom electrode and the substrate, a broad band gap semiconductor film active layer set on the insulation layer, and a collection electrode formed on the broad band gap semiconductor film active layer or formed between the insulation layer and the broad band gap semiconductor film active layer. The collection electrode specifically comprises a first electrode and a second electrode which are set separately. When the X-ray detector works, working voltages are applied to the first electrode and the second electrode. The broad band gap semiconductor film active layer can generate photon-generated carriers according to X-ray radiation from a radiation source. After the radiation source is closed, a pulse bias voltage is applied to the bottom electrode, and the photon-generated carriers are exhaustedthrough utilization of the insulation layer, so recovery time of the X-ray detector after the radiation is controlled.

Description

technical field [0001] The invention relates to the technical field of X-ray detection, in particular to an X-ray detector and a manufacturing method thereof. Background technique [0002] X-ray detection technology has extensive and important applications in medicine, industry, security inspection, nuclear safety, space communication, etc. Commonly used X-ray detectors mainly include direct conversion type (Direct DR) and indirect conversion type (Indirect DR). [0003] Among them, direct conversion X-ray detectors mostly use semiconductor materials with heavy atomic numbers such as CdZnTe, PbI 2 , amorphous Se, etc. absorb the energy of incident X-rays, excite electron-hole pairs to obtain photocurrent, and obtain signals related to X-rays. However, the current semiconductor materials of direct conversion X-ray detectors have narrow band gaps, and they face challenges in terms of operating temperature range, signal-to-noise ratio, and radiation resistance. [0004] Wide...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/115H01L31/028H01L31/0296H01L31/0304H01L31/032H01L31/18
CPCY02P70/50
Inventor 梁会力韩祖银梅增霞杜小龙
Owner INST OF PHYSICS - CHINESE ACAD OF SCI