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Preparation method of sodium tantalum oxide single-crystal film

A single crystal thin film, sodium tantalate technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complex, disadvantageous, and demanding equipment, and achieve simple process, easy production, and easy production. control effect

Inactive Publication Date: 2019-06-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the equipment of these two preparation methods is complex and expensive, and the preparation process has strict requirements on the experimental environment, which requires extremely high temperature or high vacuum to achieve, which is not conducive to large-scale attempts to prepare heterojunctions of different oxides, thus Finding a simple, effective, and high-yield preparation method for oxide heterojunctions is extremely important and urgent for both practical production and scientific research

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  • Preparation method of sodium tantalum oxide single-crystal film
  • Preparation method of sodium tantalum oxide single-crystal film
  • Preparation method of sodium tantalum oxide single-crystal film

Examples

Experimental program
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Embodiment 1

[0022] 1) A certain amount of sodium hydroxide is dissolved in deionized water, fully stirred to obtain an aqueous sodium hydroxide solution with a molar concentration of 6.25mol / L;

[0023] 2) Under stirring, add 1 mmol of tantalum pentoxide to the aqueous sodium hydroxide solution prepared in step 1), and adjust the volume of the reaction material in the inner tank of the reactor with deionized water to reach 80% of the inner tank volume of the reactor , stirring for 2 hours to obtain a suspension of the reaction precursor, and place the suspension in a polytetrafluoroethylene liner;

[0024] 3) Ultrasonic cleaning of the single crystal strontium titanate substrate with solvents such as acetone, ethanol, water, ethanol, and drying;

[0025] 4) After stopping stirring, take out the magnet. Place the cleaned single crystal strontium titanate substrate in a polytetrafluoroethylene shelf (the substrate is in a vertical position), place the shelf in a liner filled with reaction ...

Embodiment 2

[0027] 1) A certain amount of sodium hydroxide is dissolved in deionized water, fully stirred to obtain an aqueous sodium hydroxide solution with a molar concentration of 8.125mol / L;

[0028] 2) Under stirring, add 1 mmol of tantalum pentoxide to the aqueous sodium hydroxide solution prepared in step 1), and adjust the volume of the reaction material in the inner tank of the reactor with deionized water to reach 80% of the inner tank volume of the reactor , stirring for 2 hours to obtain a suspension of the reaction precursor, and place the suspension in a polytetrafluoroethylene liner;

[0029] 3) Ultrasonic cleaning of the single crystal strontium titanate substrate with solvents such as acetone, ethanol, water, ethanol, and drying;

[0030] 4) After stopping stirring, take out the magnet. Place the cleaned single crystal strontium titanate substrate in a polytetrafluoroethylene shelf (the substrate is in a vertical position), place the shelf in a liner filled with reaction...

Embodiment 3

[0032] 1) A certain amount of sodium hydroxide is dissolved in deionized water, fully stirred to obtain an aqueous sodium hydroxide solution with a molar concentration of 8.125mol / L;

[0033] 2) Under stirring, add 1.5 mmol of tantalum pentoxide to the aqueous sodium hydroxide solution prepared in step 1), and adjust the volume of the reaction material in the inner tank of the reactor with deionized water to reach 80% of the inner tank volume of the reactor. %, stirred for 2h to obtain a suspension of the reaction precursor, and placed the suspension in a polytetrafluoroethylene liner;

[0034] 3) Ultrasonic cleaning of the single crystal strontium titanate substrate with solvents such as acetone, ethanol, water, ethanol, and drying;

[0035] 4) After stopping stirring, take out the magnet. Place the cleaned single crystal strontium titanate substrate in a polytetrafluoroethylene shelf (the substrate is in a vertical position), place the shelf in a liner filled with reaction ...

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Abstract

The invention discloses a preparation method of sodium tantalum oxide (NTO) single-crystal film. The NTO single-crystal film is prepared on a strontium titanium oxide (STO) single-crystal substrate through a hydrothermal method for the first time. The method which uses tantalum pentoxide as the main raw material, sodium hydroxide as the mineralizer and a commercial two-dimensional STO single-crystal substrate as the substrate includes: intensely stirring the mixed solution of tantalum pentoxide and sodium hydroxide, adding the STO single-crystal substrate, and performing hydrothermal treatmenton the STO single-crystal substrate at high temperature to obtain the NTO single-crystal film. The preparation method is simple in process, easy to control, free of pollution, low in cost and easy toachieve large-scale production and has quite important significance to the promotion of researches and application of perovskite oxide heterojunctions in fields such as sensors, storage and spintronics.

Description

technical field [0001] The invention relates to a preparation method of a sodium tantalate single crystal thin film, belonging to the field of preparation of functional materials. Background technique [0002] Oxide heterojunctions, especially perovskite oxide heterojunctions, have always been one of the hot research topics in the field of materials science due to their rich and interesting physical connotations and potential application values ​​in technology. For example, the interfacial two-dimensional electron gas and ferromagnetism found in the strontium titanate / lanthanum aluminate (STO / LAO) system have attracted extensive attention of researchers. Similar to the STO / LAO system, charge transfer also occurs at the NTO / STO interface due to polarization discontinuity. At present, there are calculation results to predict whether in (NaO) - / (TiO 2 ) 0 The interface is still (TaO 2 ) + / (SrO) 0 There will be a high density of carriers at the interface. However, this...

Claims

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Application Information

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IPC IPC(8): C30B29/30C30B7/10
Inventor 韩高荣李玮任召辉王飞
Owner ZHEJIANG UNIV