Miniaturized compact duplexer based on thin film integrated passive device technology
An integrated passive device, compact technology, applied in the direction of waveguide devices, electrical components, connecting devices, etc., can solve the problems of performance instability, large duplexer size, etc., achieve high quality factor, performance improvement, and increase The effect of design flexibility
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specific Embodiment approach 1
[0021] Embodiment 1: The miniaturized and compact duplexer based on thin-film integrated passive device technology in this embodiment includes a high-pass filter and a low-pass filter, the high-pass filter is coupled to signal port one P1 and signal port two P2, and the low-pass filter The filter is coupled to the signal port one P1 and the signal port three P3, where the high-pass filter is composed of the second capacitor C 2 Parallel first capacitance inductance resonant circuit (loop) is formed, and described first capacitance inductance resonant circuit is made up of No. 1 electric capacity C 1 and the No. 1 inductor L 1 series; wherein the low-pass filter is made up of two series inductors connected in parallel with the second capacitor-inductance resonant circuit (loop), and the two series inductors are composed of the second inductor L 2 and No. 4 inductance L 4 series, the second capacitor inductance resonant circuit consists of the third capacitor C 3 and No. 3 in...
specific Embodiment approach 2
[0024] Specific embodiment two: the difference between this embodiment and specific embodiment one is that the inductance element in the high-pass filter and the low-pass filter is a spiral inductor, and the capacitive element in the high-pass filter and the low-pass filter is a MIM (metal-medium - metal) capacitors.
specific Embodiment approach 3
[0025] Specific Embodiment Three: In this embodiment, the method for preparing a miniaturized and compact duplexer based on thin film integrated passive device technology is implemented according to the following steps:
[0026] 1. Cleaning and polishing the surface of the substrate a to obtain a clean substrate;
[0027] 2. Depositing the first SiNx layer b on the clean substrate by plasma-enhanced chemical vapor deposition;
[0028] 3. Sputtering and depositing the first seed metal layer c on the surface of the first SiNx layer b, and then covering the wafer with a photomask, using photoresist to form a pattern of the bottom metal according to the circuit structure of a broadband miniaturized and compact duplexer, The bottom metal layer d is formed by an electroplating process, and the bottom metal layer d is used as the bottom metal of the MIM capacitor and the spiral metal of the spiral inductor, and the photoresist is removed after electroplating and the first seed metal ...
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