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Miniaturized compact duplexer based on thin film integrated passive device technology

An integrated passive device, compact technology, applied in the direction of waveguide devices, electrical components, connecting devices, etc., can solve the problems of performance instability, large duplexer size, etc., achieve high quality factor, performance improvement, and increase The effect of design flexibility

Active Publication Date: 2019-07-02
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a miniaturized and compact duplexer based on thin-film integrated passive device technology in order to solve the problems of large size and unstable performance in the working process of the existing planar cascaded duplexer

Method used

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  • Miniaturized compact duplexer based on thin film integrated passive device technology
  • Miniaturized compact duplexer based on thin film integrated passive device technology
  • Miniaturized compact duplexer based on thin film integrated passive device technology

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specific Embodiment approach 1

[0021] Embodiment 1: The miniaturized and compact duplexer based on thin-film integrated passive device technology in this embodiment includes a high-pass filter and a low-pass filter, the high-pass filter is coupled to signal port one P1 and signal port two P2, and the low-pass filter The filter is coupled to the signal port one P1 and the signal port three P3, where the high-pass filter is composed of the second capacitor C 2 Parallel first capacitance inductance resonant circuit (loop) is formed, and described first capacitance inductance resonant circuit is made up of No. 1 electric capacity C 1 and the No. 1 inductor L 1 series; wherein the low-pass filter is made up of two series inductors connected in parallel with the second capacitor-inductance resonant circuit (loop), and the two series inductors are composed of the second inductor L 2 and No. 4 inductance L 4 series, the second capacitor inductance resonant circuit consists of the third capacitor C 3 and No. 3 in...

specific Embodiment approach 2

[0024] Specific embodiment two: the difference between this embodiment and specific embodiment one is that the inductance element in the high-pass filter and the low-pass filter is a spiral inductor, and the capacitive element in the high-pass filter and the low-pass filter is a MIM (metal-medium - metal) capacitors.

specific Embodiment approach 3

[0025] Specific Embodiment Three: In this embodiment, the method for preparing a miniaturized and compact duplexer based on thin film integrated passive device technology is implemented according to the following steps:

[0026] 1. Cleaning and polishing the surface of the substrate a to obtain a clean substrate;

[0027] 2. Depositing the first SiNx layer b on the clean substrate by plasma-enhanced chemical vapor deposition;

[0028] 3. Sputtering and depositing the first seed metal layer c on the surface of the first SiNx layer b, and then covering the wafer with a photomask, using photoresist to form a pattern of the bottom metal according to the circuit structure of a broadband miniaturized and compact duplexer, The bottom metal layer d is formed by an electroplating process, and the bottom metal layer d is used as the bottom metal of the MIM capacitor and the spiral metal of the spiral inductor, and the photoresist is removed after electroplating and the first seed metal ...

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Abstract

The invention discloses a miniaturized compact duplexer based on a thin film integrated passive device technology, belongs to the field of microwave devices, particularly relates to a miniaturized duplexer, and aims to solve the problems that an existing duplexer with a planar cascade structure is large in size and unstable in performance in the working process. The compact duplexer comprises a high-pass filter and a low-pass filter, wherein the high-pass filter is coupled to a first signal port and a second signal port, and the low-pass filter is coupled to the first signal port and a third signal port. The high-pass filter is formed by the parallel connection of a second capacitor with a first capacitor and inductor resonance circuit, and the low-pass filter is formed by the parallel connection of two series inductors with a second capacitor and inductor resonance circuit. The miniaturized compact duplexer is manufactured into a multi-layer structure through the thin film integratedpassive device technology. The size of the compact diplexer is only 1.9 mm*0.8 mm, and the thickness of the compact diplexer is 0.2 mm. Moreover, the manufacturing process of the compact diplexer is high in precision and the performance of the compact diplexer is stable.

Description

technical field [0001] The invention belongs to the field of microwave devices, in particular to a miniaturized duplexer. Background technique [0002] GaAs substrate-based passive device processing technology has become one of the most promising technologies for the development of next-generation wireless communication systems. The processing methods commonly used in the traditional economy are printed circuit board technology (PCB), low temperature co-fired ceramic (LTCC) technology and complementary metal oxide semiconductor (CMOS) technology. The line width and limited spacing resolution of PCB technology will further limit the miniaturization and dimensional accuracy of RF devices; the mismatching speed of ceramic sintering and densification in LTCC technology will lead to uneven distribution on the surface of the substrate and reduce the adhesion of metal wires; Highly integrated CMOS technology can realize passive, active and digital functions in one module, but its ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P5/16H01P11/00
CPCH01P5/16H01P11/00
Inventor 王琮于赫
Owner HARBIN INST OF TECH
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