Non-fullerene perovskite solar cell and preparation method thereof

A technology of fullerene perovskite and solar cells, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor stability and low photoelectric conversion efficiency, achieve improved photoelectric efficiency, excellent electron mobility, and reduce hysteresis Effect

Active Publication Date: 2019-08-02
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the problems of low photoelectric conversion efficiency and poor stability of non-fullerene-based perovskite solar cells in the prior art, the object of the present invention is to provide a non-fullerene-based perovskite solar cell and a preparation method thereof, Using silicon phthalocyanine as the interface passivation layer material to construct high-efficiency non-fullerene perovskite solar cells improves the hysteresis of photocurrent and significantly improves the photoelectric conversion efficiency and stability. Non-fullerene-based perovskite solar cells provide new ideas

Method used

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  • Non-fullerene perovskite solar cell and preparation method thereof
  • Non-fullerene perovskite solar cell and preparation method thereof
  • Non-fullerene perovskite solar cell and preparation method thereof

Examples

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Embodiment 1

[0060] The silicon phthalocyanine used in this embodiment is a compound of formula (3):

[0061]

[0062] (1) Pretreatment of conductive substrate: the use specification is light transmittance> 85% square value <10Ω, 15mm*15mm conductive ITO is used as the device substrate. After the conductive substrate is soaked in detergent for 24 hours, use deionized water, acetone and isopropanol in an ultrasonic cleaner for 10 minutes, then use deionized water Rinse, then dry with nitrogen flow, after drying, the conductive substrate is treated with ultraviolet ozone for 12 minutes before use;

[0063] (2) Preparation of hole transport layer: use PTAA material as the hole transport layer, weigh the PTAA mass to 1.5mg, dissolve it in 10ml chlorobenzene solvent, heat and dissolve it on a heating stage at 65℃ for 8h, and spin-coating after it is fully dissolved On the ITO substrate after UV treatment, the rotation speed is 6000rpm, the time is 30s, and the drying is at 65℃ during spin coating;

...

Embodiment 2

[0070] The silicon phthalocyanine used in this embodiment is a compound of formula (4):

[0071]

[0072] (1) Pretreatment of conductive substrate: the use specification is light transmittance> 85% square value <10Ω, 15mm*15mm conductive ITO is used as the device substrate. After the conductive substrate is soaked in detergent water for 24 hours, it is sonicated with deionized water, acetone and isopropanol in an ultrasonic cleaner for 15 minutes, and then deionized Rinse with water, then dry with nitrogen flow, after drying, the conductive substrate is treated with ultraviolet ozone for 15 minutes before use;

[0073] (2) Preparation of hole transport layer: use PTAA material as the hole transport layer, weigh the PTAA mass to 1.5mg, dissolve it in 10ml chlorobenzene solvent, heat and dissolve it on a heating stage at 65℃ for 8h, and spin-coating after it is fully dissolved On the ITO substrate after UV treatment, the rotation speed is 6000rpm, the time is 30s, and the drying is a...

Embodiment 3

[0080] The silicon phthalocyanine used in this embodiment is a compound of formula (5):

[0081]

[0082] (1) Pretreatment of conductive substrate: the use specification is light transmittance> 85% square value <10Ω, 15mm*15mm conductive ITO is used as the device substrate. After the conductive substrate is soaked in detergent for 24 hours, use deionized water, acetone and isopropanol in an ultrasonic cleaner for 10 minutes, then use deionized water Rinse, then dry with nitrogen flow, after drying, the conductive substrate is treated with ultraviolet ozone for 12 minutes before use;

[0083] (2) Preparation of hole transport layer: use PTAA material as the hole transport layer, weigh the PTAA mass to 1.5mg, dissolve it in 10ml chlorobenzene solvent, heat and dissolve it on a heating stage at 65℃ for 8h, and spin-coating after it is fully dissolved On the ITO substrate after UV treatment, the rotation speed is 6000rpm, the time is 30s, and the drying is at 65℃ during spin coating;

...

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Abstract

The invention discloses a non-fullerene perovskite solar cell which comprises a conductive substrate, a hole transmission layer, a light absorption layer, an interface passivation layer, a non-fullerene electron transmission layer, a hole barrier layer and a back electrode which are arranged from the bottom to the top. The interface passivation layer is a silicon phthalocyanine layer. The siliconphthalocyanine is used as the interface passivation layer material to construct the high-efficiency non-fullerene perovskite solar cell so as to improve the hysteresis phenomenon of photocurrent, remarkably improve the photoelectric conversion efficiency and stability and provides a new idea for constructing the low-cost, high-efficiency and stable non-fullerene perovskite solar cell.

Description

Technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a non-fullerene perovskite solar cell and a preparation method thereof. Background technique [0002] Since the 1990s, people have predicted that with the rapid growth of the global population and the continuous expansion of industrialization, the problems of energy consumption and environmental pollution have increased. In order to avoid the shortage of traditional energy sources and pollution caused by unreasonable use, people have turned their attention to new environmentally friendly energy sources. And the solar energy is inexhaustible and inexhaustible. In the past billion years, only 2% of its energy has been consumed. In addition, solar energy is also clean, stable, and pollution-free, making solar energy one of the most promising renewable resources in the 21st century. There are also abundant ways to mine and utilize solar energy, among which sol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/311H10K50/166H10K50/18Y02E10/549
Inventor 袁永波柯丽丽谢承益
Owner CENT SOUTH UNIV
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