Preparation of nanocomposites with fluorine-containing blocks containing amido groups and their applications in dsa lithography with the highest resolution of 5nm

Abstract

The invention discloses the preparation of nanocomposite materials with a maximum resolution of 5 nm containing fluorine-containing blocks containing amide groups and their application in the field of DSA lithography. The raw materials for preparing the block polymers constituting the nanocomposite materials include the first unit and a second monomer, the first monomer includes at least one (meth)acrylate compound; the second monomer includes at least one functionalizable small molecule compound; the functionalizable small molecule compound The compound contains amino groups. The preparation method includes the following steps: first polymerizing a first monomer to obtain a polymer precursor, and then performing a small molecule reaction of ester aminolysis on the obtained polymer precursor with a second monomer. The DSA material according to the present invention has good applications in the preparation of nanocatalysts, nanoenergy storage devices or nanobiomedicine. Compared with the existing technology, this material has the advantages of resolution up to 5nm, low potential defect rate, high etching contrast and good application prospects.

Description

technical field [0001] The invention relates to the field of material technology, in particular to the preparation of a nanocomposite material with the highest resolution of 5nm containing amide group and fluorine-containing block and its application in the field of DSA photolithography. Background technique [0002] Directed Self-Assembly lithography (Directed Self-Assembly, DSA) is a technology that induces lithographic materials to spontaneously form an ordered structure on a silicon wafer. The method induces the pattern into a regular array of nanowires or nanoholes, thereby forming an etching template for the manufacture of nanostructures. Compared with other technologies, DSA is gradually attracting people's attention due to its advantages of low cost, high resolution, and high yield because it does not require light sources and masks. However, the block polymer DSA materials in the prior art are in the process of self-assembly (such as polystyrene-b-polymethyl methac...

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Problems solved by technology

However, the block polymer DSA materials in the prior art are in the process of self-assembly (such as polystyrene-b-polymethyl methacrylate (polystyrene-block-poly(methyl methacrylate), PS-b-PMMA)) , usually requires a higher annealing temperature (above 160 ° C) and a longer annealing time (above 10 hours), this time-consuming and energy-consuming process is difficult to meet the needs of modern industrial production

The PS-b-PMMA material in the prior art still has some defects after self-assembly on the wafer, which hinders its application in actual production

[0003] In addition, the traditional DSA material block polymer is composed of two blocks with similar properties, so its etching contrast is poor and pattern transfer is difficult; at the same time, because its two blocks do not have special functional groups, the traditional DSA materials usually do not have the ability to be functionalized later, which limits their application range

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