System and method for producing TiN, TiC and TiCN powder
A powder and inert gas technology is applied in the field of powder preparation, TiN, TiC, TiCN powder preparation technology. , the effect of raw material economy
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Embodiment 1
[0046] combine figure 1 , the system used in this embodiment to produce TiN, TiC, TiCN powders includes powder feeding device 1, TiCl 4 Evaporation device 2, heating device 2-1, deposition reaction fluidized bed 3, cyclone separation device 4, high temperature dust removal device 5, first water cooling device 6, fine powder collection device 7, second water cooling device 8, TiCl 4 Recovery device 9, tail gas treatment device 10, powder collection device 11;
[0047] The air inlet at the bottom of the powder feeding device 1 is connected to the inert gas pipeline through an air valve and the pipeline; The valve is connected to the pipeline;
[0048] The TiCl 4 The evaporation device 2 is equipped with the heating device 2-1; the TiCl 4 The gas inlet of evaporation device 2 is connected with inert gas pipeline and hydrogen pipeline through gas valve and pipeline; 4 The exhaust port of the evaporating device 2 is connected with the gas inlet at the bottom of the deposition ...
Embodiment 2
[0056] In this embodiment, the method for producing TiN, TiC, and TiCN powders using the system in the above-mentioned embodiment 1 specifically includes the following steps:
[0057] The target seed powder is cleaned with an inert gas in the powder feeding device 1 to remove physically or chemically adsorbed air impurities, and is transported into the deposition reaction fluidized bed 3 through material valves and pipelines; inert gas and / or h 2 Through the TiCl 4 Evaporation device 2 TiCl 4 Loaded into the deposition reaction fluidized bed 3; inert gas, nitrogen source gas, carbon source gas, and hydrogen enter the deposition reaction fluidized bed 3 through gas valves and pipelines, and the target seed powder is in a fluidized state in an inert atmosphere. oxidized state, while the TiCl 4 React with nitrogen source gas, carbon source gas, and hydrogen to synthesize TiN, TiC, and TiCN powders, and the synthesized powders are attached to the target seed powder to form new ...
Embodiment 3
[0060] In this embodiment, on the basis of the above-mentioned embodiment 2, TiC is the target seed powder with a particle size of 5 μm. The TiCl 4 The temperature of the evaporator 2 was 25°C. The temperature of the deposition reaction fluidized bed 3 is 900°C, the average residence time of the powder is 30min, and the carbon source gas is CH 4 , C content in carbon source gas and TiCl 4 The ratio of the Ti content in the medium is 1. The powder in the fine powder collection device 7 is submicron TiC powder, and the powder in the powder collection device 11 is micron TiC powder. figure 2 is the XRD pattern of the obtained powder. It can be seen from the figure that the powder is a single-phase TiC powder, and Ti / C≈1.
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