A silicon carbide planar polishing method and device with synergistic effects of chemical pretreatment and dielectrophoresis

Abstract

The invention discloses a chemical pretreatment and dielectrophoresis synergistic silicon carbide plane polishing method and device, and solves the problem of uneven silicon carbide plane polishing. According to the method, firstly, a workpiece to be polished is pretreated by utilizing a Fenton reaction, a silicon dioxide corrosion layer is generated on the surface of the workpiece, the hardness of the surface of the workpiece is reduced, then the workpiece is placed in a static overflow cavity, and a non-uniform electric field is applied in a overflow cavity to polarize abrasive particles, sothat abrasive particles are not uniformly stressed and move and gather towards the surface of the workpiece, and the material removal rate is improved. An abrasive flow polishes a plane of the workpiece to be polished subjected to Fenton pretreatment under the action of a non-uniform electric field, so that the effect of high-efficiency uniform polishing is achieved. The workpiece polished by thepolishing method is uniform in surface, low in surface roughness, high in surface quality and high in processing efficiency.

Description

Technical field [0001] The invention belongs to the field of ultra-precision processing, and specifically relates to a silicon carbide plane polishing method and device with the synergistic effect of chemical pretreatment and dielectrophoresis. Background technique [0002] Silicon carbide is a representative of the third generation of semiconductor materials. Its wide band gap, high critical breakdown field strength, high electron mobility, and high thermal conductivity have broad application prospects in production. At present, silicon carbide has been widely used in abrasives, metallurgy, LED solid-state lighting and high-frequency devices, especially in electronic applications such as high temperature and high pressure, as well as in extreme environments such as aerospace and military industry. [0003] High-purity single crystal silicon carbide is an important material for manufacturing semiconductors. The application of single crystal silicon carbide requires that the surfac...

AI Technical Summary

Problems solved by technology

The pressure distribution parallel to the flow direction of the abrasive particles is uneven, the energy attached to the abrasive particles is continuously reduced, and the shear force on the surface of the processed workpiece is unevenly distributed, resulting in uneven surface of the workpiece after processing, and the processing accuracy is difficult to meet the requirements.

(3) The test processing time is still long, the processing efficiency is low, and the energy consumption is too large, resulting in high processing cost

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