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Copper bismuthate film embedded with ligand-free quantum dots, and preparation method and application thereof

A quantum dot, ligand-free technology, applied in chemical instruments and methods, catalyst activation/preparation, electrodes, etc., can solve the problems of complex photoelectrode preparation process, low photocurrent density, and lack of doping strategies in thin films, and achieve improved The effect of carrier separation efficiency, simple preparation process and mild conditions

Inactive Publication Date: 2019-09-06
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The design of nanostructure design can reduce the diffusion distance of carriers and improve the light absorption efficiency. However, this method makes the preparation process of photoelectrodes more complex and cannot fundamentally solve the problem of carrier transport.
Heterojunction is also a strategy to improve the carrier separation efficiency. By forming a heterojunction with CuO, the carrier separation efficiency can be improved, but the photocurrent density is still far below the theoretical value.
Doping is also a common method to improve carrier transport, such as W / Mo doping can significantly improve BiVO 4 optoelectronic properties, however for CuBi 2 o 4 Thin films currently lack effective doping strategies

Method used

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  • Copper bismuthate film embedded with ligand-free quantum dots, and preparation method and application thereof
  • Copper bismuthate film embedded with ligand-free quantum dots, and preparation method and application thereof
  • Copper bismuthate film embedded with ligand-free quantum dots, and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0035] A mosaic BaTiO 3 Copper bismuthate film without ligand quantum dots, including nanoporous copper bismuthate film and BaTiO embedded in the bismuthate copper film 3 Ligand-free quantum dots, and BaTiO 3 Ligand-free quantum dots in mosaic BaTiO 3 The mass fraction in the copper bismuth oxide thin film without ligand quantum dots is 5.0%.

[0036] Concrete preparation method comprises the following steps:

[0037] S1, the Cu(NO 3 ) 2 ·3H 2 O and Bi(NO 3 ) 3 ·5H 2 O is dissolved in a solvent mixed with ethanol, ethylene glycol and acetic acid in equal volumes at a molar ratio of 1:2. After mixing evenly, add block copolymer F108 and mix evenly to obtain 0.1mol / ml CuBi 2 o 4 Precursor solution; Among them, CuBi 2 o 4 The concentration of block copolymer F108 in the precursor solution is 0.1 mg / ml; the addition of F108 can increase the viscosity of the solution on the one hand to facilitate film formation, and on the other hand, it can be used as a template to for...

Embodiment 2

[0043] A mosaic SrTiO 3 Copper bismuthate film without ligand quantum dots, including nanoporous copper bismuthate film and SrTiO embedded in the bismuthate copper film 3 Ligand-free quantum dots, and SrTiO 3 Ligand-free quantum dots in mosaic SrTiO 3 The mass fraction in the copper bismuth oxide thin film without ligand quantum dots is 0.1%.

[0044] Concrete preparation method comprises the following steps:

[0045] S1, the Cu(NO 3 ) 2 ·3H 2 O and Bi(NO 3 ) 3 ·5H 2 O is dissolved in a solvent mixed with ethanol, ethylene glycol and acetic acid in equal volumes at a molar ratio of 1:2. After mixing evenly, add block copolymer F108 and mix evenly to obtain 0.5mol / ml CuBi 2 o 4 Precursor solution; Among them, CuBi 2 o 4 The concentration of block copolymer F108 in the precursor solution is 0.1mg / ml;

[0046] S2, 1mgSrTiO 3 The particles are dispersed in 10ml of a solvent mixed with ethanol, ethylene glycol and acetic acid in equal volumes to obtain a mixed solutio...

Embodiment 3

[0051] A copper bismuthate film embedded with Au ligand-free quantum dots, comprising a nanoporous copper bismuthate film and Au ligand-free quantum dots embedded in the copper bismuthate film, and the Au ligand-free quantum dots are inlaid The mass fraction of Au ligand-free quantum dots in the copper bismuth oxide film is 3%.

[0052] Concrete preparation method comprises the following steps:

[0053] S1, the Cu(NO 3 ) 2 ·3H 2 O and Bi(NO 3 ) 3 ·5H 2 O is dissolved in a solvent mixed with ethanol, ethylene glycol and acetic acid in equal volumes at a molar ratio of 1:2. After mixing evenly, add block copolymer F108 and mix evenly to obtain 0.2mol / ml CuBi 2 o 4 Precursor solution; Among them, CuBi 2 o 4 The concentration of block copolymer F108 in the precursor solution is 0.1mg / ml;

[0054] S2, put the Au sheet in 10ml of a mixed solvent composed of ethanol, ethylene glycol, and acetic acid in equal volumes, and irradiate the mixed solvent containing the Au sheet u...

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Abstract

The invention discloses a copper bismuthate film embedded with ligand-free quantum dots, and a preparation method and an application thereof. The preparation method comprises the following steps: dispersing a semiconductor oxide or a metal material in a liquid medium to obtain a mixed solution; irradiating the mixed solution under a laser beam to obtain a ligand-free quantum dot colloid solution;and mixing the ligand-free quantum dot colloid solution with a copper bismuthate precursor solution, forming a film, and sintering the film to obtain the copper bismuthate film embedded with ligand-free quantum dots. The ligand-free quantum dots are uniformly embedded in the copper bismuthate film by a liquid phase pulse irradiation technique, so that the carrier separation efficiency of the copper bismuthate film is significantly improved; and results of photocurrent density test of films shows that the photocurrent density of the copper bismuthate film not embedded with ligand-free quantum dots is 2.0 mA / cm<2>, and the photocurrent density of the copper bismuthate film embedded with ligand-free quantum dots is increased to about 3.0 mA / cm<2>, so the photoelectric performances are remarkably improved.

Description

technical field [0001] The invention relates to the technical field of photoelectric catalysis, in particular to a copper bismuth acid thin film embedded with ligand-free quantum dots, a preparation method and an application. Background technique [0002] Hydrogen energy is an efficient and clean energy, and one of the important energy sources to realize the sustainable development of human society. Hydrogen production by photoelectrochemical (PEC) hydrolysis is a low-cost way to produce hydrogen. The key to this technology is to find cheap and stable photocathode materials. Copper bismuthate (CuBi 2 o 4 ), also known as bismuth copper ore, is a natural mineral that is cheap and easy to obtain and has stable chemical properties. In recent years, CuBi 2 o 4 Due to its sufficiently narrow direct bandgap (1.5-1.8eV), suitable band edge position (>+1V vs. RHE) and low cost, it is considered as one of the ideal materials for PEC water splitting. Under simulated light of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/843B01J23/89B01J37/34C25B1/04C25B11/06
CPCB01J23/8437B01J23/8973B01J23/002B01J37/349C25B1/04B01J2523/00C25B1/55C25B11/091B01J35/393B01J35/23B01J35/399B01J35/33B01J35/39B01J2523/17B01J2523/25B01J2523/47B01J2523/54B01J2523/24Y02E60/36
Inventor 王洪强徐有勋简洁叶谦
Owner NORTHWESTERN POLYTECHNICAL UNIV
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