Semiconductor substrate material polishing method

A substrate material and semiconductor technology, applied in the direction of cleaning methods using liquids, cleaning methods and utensils, chemical instruments and methods, etc., can solve the problems of not improving the chemical mechanical polishing rate, and achieve short polishing process time and laser polishing time Effect of short, reduced processing steps

Inactive Publication Date: 2019-10-11
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned patent only improves one step in substrate processing, and does not increase the chemical mechanical polishing rate.

Method used

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  • Semiconductor substrate material polishing method
  • Semiconductor substrate material polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The surface of the silicon carbide substrate after wire-cutting is polished by the GYLPM type nanosecond laser of IPG company: the laser scanning speed is 1mm / s, and the laser energy density used is 1J / cm 2 After the scanning is completed, put it in ethanol and ultrasonically clean it for 5 minutes; use the 1000S polishing machine of Shenyang Kejing Company, alkaline alumina polishing liquid, and polyurethane polishing pad to polish the cleaned silicon carbide substrate for 3 hours, and the polishing pressure is 400g / cm 2 . After polishing, a Leica microscope was used to observe the surface of the polished silicon carbide material, and it was found that the surface damage had been completely removed.

Embodiment 2

[0030] Universal company ULR50 type CO 2 The surface of the silicon carbide substrate after laser polishing and wire cutting: the laser scanning speed is 250mm / s, and the laser energy density used is 0.01J / cm 2 After the scanning is completed, put it in ethanol for ultrasonic cleaning for 1 minute; use the 1000S polishing machine of Shenyang Kejing Company, alkaline cerium oxide polishing liquid, and composite polishing pad to polish the cleaned silicon carbide substrate for 1 hour, and the polishing pressure is 100g / cm 2 . After polishing, a Leica microscope was used to observe the surface of the polished silicon carbide material, and it was found that the surface damage had been completely removed.

Embodiment 3

[0032] The silicon carbide substrate surface after wire-cutting is polished by LIGHTCINVERSION PH1 femtosecond laser: the laser scanning speed is 500mm / s, and the laser energy density used is 20J / cm 2 ; After the scanning is completed, put it in water for ultrasonic cleaning for 10 minutes; use the 1000S polishing machine of Shenyang Kejing Company, acidic silicon oxide polishing liquid, and polyurethane polishing pad to polish the cleaned silicon carbide substrate for 5 hours, and the polishing pressure is 300g / cm 2 . After polishing, a Leica microscope was used to observe the surface of the polished silicon carbide material, and it was found that the surface damage had been completely removed.

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Abstract

The invention relates to a semiconductor substrate material polishing method and belongs to the technical field of semiconductor material polishing. The semiconductor substrate material polishing method comprises the following steps: carrying out laser polishing on a semiconductor substrate material subjected to linear cutting; carrying out ultrasonic cleaning on the semiconductor substrate material subjected to laser polishing, so that the laser polishing treatment can be completed; and treating the semiconductor substrate material obtained in the previous step by the adoption of chemical mechanical polishing. The semiconductor substrate material polishing method provided by the invention has the beneficial effects that through the laser polishing process, the surface damage can be efficiently removed as well as a structure and a component which are beneficial to chemical mechanical polishing and removal can be formed; meanwhile, the laser polishing process is contactless and no new mechanical damage is generated, so that the ultra-precision polished surface can be obtained within only 0.1-5 hours in the next step of chemical mechanical polishing; all the processing steps in the semiconductor substrate material polishing method can be completed through commercial equipment; the implementation is easy; and the application prospects are good.

Description

technical field [0001] The invention relates to a semiconductor substrate material polishing method, which belongs to the technical field of semiconductor substrate material polishing, in particular to the technical field of ultra-precision polishing for hard-to-process substrate materials such as superhard materials and brittle materials. Background technique [0002] Traditional semiconductor substrate material processing is divided into steps such as crystal growth, wire cutting, precision machining, and cleaning. The precision machining step is used to remove defects such as damaged layers and surface unevenness caused by the cutting process, and significantly reduce surface stress and roughness. Thus, an atomic-scale surface is obtained. At present, precision machining includes grinding, mechanical polishing, chemical mechanical polishing and other steps, and the processing technology is cumbersome. Especially for difficult-to-process substrate materials such as superh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/12B23K26/352
CPCB08B3/12B23K26/3576
Inventor 潘国顺陈高攀罗桂海罗海梅周艳
Owner TSINGHUA UNIV
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