A kind of preparation method of wafer level vanadium dioxide thin film

A vanadium dioxide, wafer-level technology, applied in the field of functional thin film preparation, can solve the problems of narrow oxidation temperature, annealing time and oxygen partial pressure parameter window, obtaining high-quality large-size thin films, and demanding process parameters. , to achieve the effect of efficient preparation, large-scale production and application, and excellent performance

Active Publication Date: 2020-08-25
UNIV OF SCI & TECH OF CHINA
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the above preparation methods, the metal vanadium thin film thermal oxidation method has relatively simple equipment requirements, but the process parameters are demanding, and the parameters such as oxidation temperature, annealing time and oxygen partial pressure are very narrow.
At the same time, the prepared vanadium dioxide films often contain a variety of valence states and impurity phases, and high-quality large-size films cannot be obtained, and the repeatability is very poor, which is not conducive to large-scale production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of wafer level vanadium dioxide thin film
  • A kind of preparation method of wafer level vanadium dioxide thin film
  • A kind of preparation method of wafer level vanadium dioxide thin film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The invention provides a method for preparing a wafer-level vanadium dioxide film, comprising the following steps:

[0036] S1. Provide a uniformly grown metal vanadium film;

[0037] S2. Using water vapor to oxidize the metal vanadium thin film at a temperature of 450-650° C. under oxygen-free conditions to obtain a monoclinic phase vanadium dioxide thin film.

[0038] The method for preparing the vanadium dioxide thin film is simple, highly repeatable, and low in cost; the prepared vanadium dioxide thin film is uniform and compact, has excellent metal-insulator transition performance, and its size can reach wafer level, which is beneficial for application.

[0039] see figure 1 , figure 1 It is a schematic diagram of a device for growing a vanadium dioxide film by water vapor oxidation in an embodiment of the present invention. In order to solve the problems of harsh experimental conditions and expensive experimental equipment in the existing preparation methods of...

Embodiment 1

[0054] Select a 2 inch diameter round Al 2 o 3 (0001) Substrate, using thermal evaporation method at a vacuum degree better than 4×10 -3 Pa, and then the substrate was rotated at a constant speed of 4 rpm.

[0055] Turn on the electron gun for heating, vaporize the metal vanadium with a purity of 99.99% to produce a vanadium atom beam, measure its rate with a quartz crystal vibrating film thickness meter, and adjust the power of the electron beam evaporation source to produce a stable vanadium atom beam at a rate of 5.5 Angstroms / min. Open the baffle, spray the metal vanadium atom beam onto the surface of the substrate for reaction deposition, grow and form the metal vanadium thin film, and the growth time is 40 minutes.

[0056] After the growth process is over, the metal vanadium atomic beam is turned off, and the prepared metal vanadium thin film is taken out from the vacuum chamber. The thickness of the metal vanadium thin film is 20nm, and its actual photo can be foun...

Embodiment 2

[0062] Select a 2 inch diameter round Al 2 o 3 (0001) Substrate, using thermal evaporation method at a vacuum degree better than 5×10 -3 Pa, and then the substrate was rotated at a constant speed of 4 rpm.

[0063] Turn on the electron gun for heating, vaporize the metal vanadium with a purity of 99.99% to produce a vanadium atom beam, measure its rate with a quartz crystal vibrating film thickness meter, and adjust the power of the electron beam evaporation source to produce a stable vanadium atom beam at a rate of 7.5 Angstroms / min. Open the baffle, spray the metal vanadium atom beam onto the surface of the substrate for reaction deposition, grow and form the metal vanadium thin film, and the growth time is 260 minutes.

[0064] After the growth process is over, the metal vanadium atomic beam is turned off, and the prepared metal vanadium film is taken out from the vacuum chamber, and the film thickness is 200 nm.

[0065] use figure 1 In the device shown, the metal van...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of a wafer-level vanadium dioxide film. The preparation method comprises the following steps of S1, providing a metal vanadium film with uniform growth; andS2, under the condition that the temperature is 450-650 DEG C and oxygen-free, oxidizing the metal vanadium film by using water vapor to obtain a monoclinic phase vanadium dioxide film. The preparation method can be used for preparing the vanadium dioxide thin film with the excellent performance of the wafer level size, is uniform and compact, and can achieve the resistance change of three to four orders of magnitudes in the phase change process. According to the preparation method, the water vapor is used as a mild oxidizing agent, a self-adjusting oxidation mechanism can be realized in thegrowth process when the vanadium dioxide film is prepared, so that a stable positive tetravalent monoclinic phase vanadium dioxide film can be prepared. According to the preparation method, the growthtemperature zone prepared by the vanadium dioxide film is greatly expanded, and the vanadium dioxide film can be efficiently prepared within the range of 450-650 DEG C; and the method is simple and easy to implement and high in repeatability, and the whole film growth process is non-toxic, environment-friendly and low in cost.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin films, and in particular relates to a method for preparing a wafer-level vanadium dioxide thin film, in particular to a method for preparing a vanadium dioxide thin film by wet thermal oxidation. Background technique [0002] Vanadium dioxide has a reversible giant metal-insulator transition behavior (metal-insulator transition, MIT), and its crystal structure can change from an insulating monoclinic phase to a metal tetragonal phase reversible phase structure at a phase transition temperature of 68 ° C, accompanied by 3 -5 orders of magnitude resistance jump and excellent infrared switching performance. Among them, the volume change problem of vanadium dioxide thin film materials is relatively small, and has broad application prospects in the fields of energy-saving smart windows, photoelectric switches, infrared imaging, photoresistors, optical storage, and infrared laser ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/18C23C14/30C23C14/35C23C14/08C23C14/58
CPCC23C14/083C23C14/16C23C14/18C23C14/30C23C14/35C23C14/5853
Inventor 邹崇文任慧李博文
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap