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Preparation methods for germanium-antimony-tellurium powder and target material

A germanium antimony tellurium and powder technology is applied in the field of phase change storage material preparation, which can solve the problems of uneven composition of germanium antimony tellurium ternary alloy, element segregation, low material density, etc. Relatively high density effect

Inactive Publication Date: 2019-10-18
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the germanium-antimony-tellurium ternary alloy produced by this method has problems such as uneven composition and element segregation; in addition, microscopic defects (bubbles, cavities, etc.) will be caused inside the material due to different cooling rates during casting. , which makes the material density low, which has an adverse effect on the film material formed after sputtering

Method used

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  • Preparation methods for germanium-antimony-tellurium powder and target material
  • Preparation methods for germanium-antimony-tellurium powder and target material

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preparation example Construction

[0024] The present invention proposes a preparation method of germanium antimony tellurium powder, which comprises the following steps:

[0025] S1. Binary alloy synthesis: Under the protection of protective gas, take a certain proportion of Ge powder and Te powder, Sb grain and Te powder into the first quartz boat and the second quartz boat respectively, and put the first quartz boat and the second quartz boat The two quartz boats are respectively put into the tube furnace, heated by step-wise heating and heat preservation, and react to form GeTe alloy and Sb respectively. 2 Te 3 alloy;

[0026] S2. Pulverization and pulverization: under the protection of protective gas, the GeTe alloy and Sb 2 Te 3 The alloy is crushed by a pulverizer to obtain GeTe and Sb 2 Te 3 Alloy powder;

[0027] S3. Homogeneous mixing: take the GeTe alloy powder and Sb crushed in S2 in proportion 2 Te 3 The alloy powder is mixed in the PV barrel, and then put a certain amount of zirconium ball...

Embodiment 1

[0041] Germanium powder (Ge) with a purity of 4N, antimony particles (Sb) with 5N, and tellurium powder (Te) with 5N were prepared. Calculated according to the stoichiometric ratio Ge:Te=1:1 and Sb:Te=2:3, considering that Te will be volatilized and lost during the heating reaction, based on the theoretical calculation of materials, Te is slightly excessive.

[0042] Firstly, a protective gas-nitrogen was introduced into the tube furnace at an air flow rate of 10 L / min for 30 minutes to remove the air in the tube furnace, and 108.84 g of germanium and 192.66 g of tellurium were weighed with an electronic balance with an accuracy of 0.01 g. 233.34g antimony and 369.66g tellurium, put 108.84g germanium and 192.66g tellurium into the first quartz boat, put 233.34g antimony and 369.66g tellurium into the second quartz boat, put the first quartz boat into the tube furnace , and continue to feed nitrogen into the tube furnace at a gas flow rate of 10 L / min for 30 min.

[0043] In t...

Embodiment 2

[0050] Germanium powder (Ge) with a purity of 4N, antimony particles (Sb) with 5N, and tellurium powder (Te) with 5N were prepared. Calculated according to the atomic ratio Ge:Te=1:1 and Sb:Te=2:3, considering that Te will be volatilized and lost during the heating reaction, based on the theoretical calculation of materials, Te is slightly excessive.

[0051] Firstly, a protective gas-nitrogen was introduced into the tube furnace at an air flow rate of 10 L / min for 30 minutes to remove the air in the tube furnace, and 90.70 g of germanium and 160.30 g of tellurium were weighed with an electronic balance with an accuracy of 0.01 g. 213.90g antimony and 338.31g tellurium, put 90.70g germanium and 160.30g tellurium into the first quartz boat, put 213.90g antimony and 338.31g tellurium into the second quartz boat, put the first quartz boat into the tube furnace , and continue to feed nitrogen into the tube furnace at a gas flow rate of 10 L / min for 30 min.

[0052] In the tube fu...

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Abstract

The invention relates to a preparation method for germanium-antimony-tellurium powder. The method comprises the following steps: step 1, synthesizing a binary alloy; step 2, preparing powder by crushing; step 3, performing homogenization on a mixed material; and step 4, synthesizing the ternary alloy powder. The invention also provides a preparation method for a germanium-antimony-tellurium targetmaterial. According to the preparation methods for the germanium-antimony-tellurium alloy and target material provided by the invention, the prepared germanium-antimony-tellurium alloy has a yield ofgreater than 98%; and the prepared target material has a relative density of greater than 98%, purity of 4N or more, the high relative density, uniform components and less microdefects.

Description

technical field [0001] The invention relates to the field of preparation of phase change storage materials, in particular to a preparation method of germanium antimony tellurium powder and a target material. Background technique [0002] Phase change storage means that a certain material has two independent and stable structural states - crystalline state and amorphous state. In order to overcome the energy barrier between the two, a certain amount of energy must be applied to the material (laser strong beam exposure and current Pulse, etc.) make it switch between two structural states, and use the crystalline state and the amorphous state as the most basic 0 and 1 storage units to realize direct recording and erasing of information. [0003] At present, the most widely used phase-change memory materials in memory are germanium-antimony-tellurium ternary alloys, especially Ge, which has excellent comprehensive properties. 2 Sb 2 Te 5 (referred to as GST) materials are the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C23C14/34
CPCC01B19/002C01P2002/72C01P2006/10C01P2006/80C23C14/3414
Inventor 沈文兴白平平朱刘童培云肖翀
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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