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A two-dimensional high conductivity hydrogenated nbse 2 Nano film, its preparation method and application

A high-conductivity, nano-thin film technology, applied in the field of materials, can solve problems such as limited application of two-dimensional materials

Active Publication Date: 2021-07-06
SUZHOU POWERSITE ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, the application of 2D materials in flexible and highly conductive electrodes is still limited due to the lack of universal and economical fabrication methods.

Method used

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  • A two-dimensional high conductivity hydrogenated nbse <sub>2</sub> Nano film, its preparation method and application
  • A two-dimensional high conductivity hydrogenated nbse <sub>2</sub> Nano film, its preparation method and application
  • A two-dimensional high conductivity hydrogenated nbse <sub>2</sub> Nano film, its preparation method and application

Examples

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preparation example Construction

[0029] The invention provides a two-dimensional high conductivity hydrogenated NbSe 2 A method for preparing nanosheets, comprising:

[0030] A) Layered NbSe 2 The block is immersed in the lithium source solution to react to obtain the precursor Li x NbSe 2 ;

[0031] B) will Li x NbSe 2 Dispersed in deionized water, protected by inert gas, and ultrasonically stripped to obtain dispersed ultra-thin two-dimensional high-conductivity hydrogenated H x NbSe 2 Nanosheets.

[0032] Two-dimensional high conductivity hydrogenated NbSe provided by the present invention 2 The nanosheets first layered NbSe 2 The block is immersed in the lithium source solution to react to obtain the precursor Li x NbSe 2 .

[0033] The present invention firstly prepares layered NbSe 2 The block material is not limited in the present invention, and commercially available ones can be used. Preferably its size is 5 to 10 mm.

[0034] The lithium source of the present invention is an organolit...

Embodiment 1

[0061] At normal pressure, the layered NbSe 2 The block was soaked in a hexane solution of n-butyllithium at 80°C for 3 hours to prepare the precursor Li x NbSe 2 ; Will Li x NbSe 2 Dispersed in deionized water, protected by nitrogen gas, and ultrasonically stripped for 30 minutes to obtain dispersed ultra-thin HxNbSe 2 nanosheets; ultrathin H x NbSe 2 The size of the nano sheet is 1-50 μm, and the thickness is less than 1 nm. figure 1 Electron micrograph of the nanosheets prepared in Example 1 of the present invention, figure 2 The atomic force scanning and electron microscope cross-sectional photos of the nanosheets prepared in Example 1 of the present invention, image 3 It is a high-resolution atomic phase picture of the nanosheets prepared in Example 1 of the present invention.

Embodiment 2

[0063] At normal pressure, the layered NbSe 2 The block was soaked in a hexane solution of n-butyllithium at 80°C for 3 hours to prepare the precursor Li x NbSe 2 ; Will Li x NbSe 2 Dispersed in deionized water, protected by nitrogen gas, and ultrasonically stripped for 50 minutes to obtain dispersed ultra-thin HxNbSe 2 nanosheets; ultrathin H x NbSe 2 The size of the nano sheet is 1-50 μm, and the thickness is less than 1 nm.

[0064] The crystal quality and phase of the prepared nanosheets can be analyzed by X-ray diffractometer, such as Figure 4 As shown, the X-ray diffraction image shows that the obtained nanosheet samples are highly crystalline and oriented, and the pattern is consistent with the metallic phase NbSe at room temperature 2 X-ray diffraction c-direction orientation spectrum.

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Abstract

The invention provides a two-dimensional high conductivity hydrogenated NbSe 2 The preparation method of nanosheets, comprising: layered NbSe 2 The block is immersed in the lithium source solution to react to obtain the precursor Li x NbSe 2 ; Will Li x NbSe 2 Dispersed in deionized water, protected by inert gas, and ultrasonically stripped to obtain dispersed ultra-thin two-dimensional high-conductivity hydrogenated H x NbSe 2 Nanosheets. The present invention selects highly conductive layered NbSe 2 Metallic materials, using Li ion intercalation to expand NbSe 2 The layer spacing is easy to peel off into ultra-thin nanosheets; it also makes full use of H ions in water to replace Li ions, realizes electron injection, and further improves the carrier concentration and conductivity of nanosheets, thus obtaining hydrogenated NbSe with high conductivity. 2 Nanosheets can be further assembled into thin films. The method of the invention is simple, the yield is high, the structure is well preserved, the two-dimensional film is assembled into a two-dimensional thin film for easy transfer, the conductivity is high, and the cycle stability is good.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a two-dimensional high-conductivity hydrogenated NbSe 2 Nanofilms, their preparation methods and applications. Background technique [0002] In recent years, a series of research advances in two-dimensional materials represented by graphene have made it possible to more systematically regulate the intrinsic conductivity of materials on a two-dimensional scale and further construct comprehensive two-dimensional electronic devices. Research on electron transport in graphene shows that the dimensional confinement effect causes electrons to form a linear dispersion relationship near the Dirac point, resulting in graphene having a very high in-plane carrier mobility, which is 200 times that of silicon, the current mainstream semiconductor material. Therefore, It is expected to be used to develop a new generation of electronic components or transistors that are thinner and conduct e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01B19/007C01P2004/20C01P2004/62C01P2004/64
Inventor 吴长征郭宇桥谢毅
Owner SUZHOU POWERSITE ELECTRIC CO LTD
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