Gallium arsenide single crystal growth device and growth method

Abstract

The invention relates to a gallium arsenide single crystal growth device and a growth method, belonging to the field of crystal growth. The gallium arsenide single crystal growth device realizes an integrated single crystal growth process from arsenic and gallium raw materials to gallium arsenide single crystals by improving of the shape of a quartz tube and the structure of a single crystal furnace. The quartz tube component comprises a single crystal quartz tube and a W-shaped polycrystalline quartz tube which are welded together, then charged, then vacuumized, welded and sealed by a quartzcap; and the single crystal furnace is transformed into a horizontal and vertical conversion furnace body. The furnace body is slowly controlled to be vertical from a horizontal shape through. When insynthesizing of polycrystals, the furnace body is horizontal, and when in growing of single crystals, the furnace body is rotated into a vertical shape. Then qualified single crystal is grown throughtemperature control. The method reduces the procedures of gallium arsenide polycrystalline synthesis and single crystal growth, and shortens the single crystal growth time, and the grown single crystal has fewer impurities, better performance and quality and higher crystal formation rate.

Description

technical field [0001] The invention relates to a gallium arsenide single crystal growth device and a growth method, belonging to the field of crystal growth. Background technique [0002] Gallium arsenide (GaAs) is the second-generation semiconductor material after germanium and silicon. The methods used to mass produce GaAs crystals include the traditional liquid-enclosed Czochralski method (LEC method) and the horizontal boat production method (HB method). At the same time, the vertical gradient solidification method (VGF method), the vertical Bridgman method (VB method) and the vapor pressure controlled Czochralski method (VCG method) which have the advantages of the above two methods have also been developed, and 4~ 6 inch large diameter GaAs crystal. [0003] At present, the mature VGF method of GaAs single crystal growth process is relatively complicated, and cannot grow single crystals from raw materials arsenic and gallium in one step. Firstly, 6N arsenic and 6N g...

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Problems solved by technology

[0003] At present, the mature VGF method of GaAs single crystal growth process is relatively complicated, and cannot grow single crystals from raw materials arsenic and gallium in one step. Firstly, 6N arsenic and 6N gallium are synthesized into GaAs polycrystalline material by horizontal Bridgman method, and then The GaAs polycrystalline material is processed into a specified shape, and then cleaned and put into a pyrolytic boron nitride (PBN) crucible, and then the GaAs polycrystalline material is sealed by vacuuming and other methods, and by adding B 2 o 3 As a liquid sealant and wetting agent to form the boundary conditions required for GaAs single crystal growth

With the existing VGF single crystal growth process, the growth cycle is long. From the synthesis of gallium arsenide polycrystalline materials to the growth of single crystals, a large amount of materials are lost, and other impurities are also brought in, which affect the survival rate of single crystals.

The growth process of this process is complex, the cycle is long, the loss of materials is large, and the cost is high

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