Composition for forming coating film for foreign matter removal use

A technology of composition and film coating, which is applied in the preparation of detergent mixture composition, detergent composition, non-surface active detergent composition, etc., can solve the problems of incomplete removal, etc., and achieve the reduction of defects and the improvement of yield Effect

Pending Publication Date: 2019-10-22
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Even if the foreign matter is washed with a known organic solvent, liquid reagent, etc., it may not be completely removed.

Method used

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  • Composition for forming coating film for foreign matter removal use
  • Composition for forming coating film for foreign matter removal use
  • Composition for forming coating film for foreign matter removal use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0147] (Synthesis of polyamic acid)

[0148] By mixing 4.36g of pyromellitic dianhydride, 1.19g of diaminobenzoic acid, and 4.26g of 2,2-bis(3-amino-4-toluoyl)hexafluoropropane in 55.6g of propylene glycol monomethyl ether at 60 The reaction was carried out at °C for 25 hours to obtain a solution [A] containing a polyamic acid.

[0149] (Synthesis of light-absorbing compounds)

[0150] By making 19.0g of 3,7-dihydroxy-2-naphthoic acid, 10g of tris(2,3-epoxypropyl)isocyanurate, and 0.552g of benzyltriethylammonium chloride in 118g of cyclohexanone The reaction was carried out at 130° C. for 24 hours to obtain a solution [a] containing a light-absorbing compound.

[0151] (Preparation of coating film-forming composition for foreign matter removal)

[0152] Add 4.38 g of solution [a] containing a light-absorbing compound, 0.630 g of tris(2,3-epoxypropyl)isocyanurate, and propylene glycol monomethyl ether to 14.0 g of solution [A] containing polyamic acid 52.3 g and 67.5 g of ...

Embodiment 2

[0160] (Preparation of coating film-forming composition for foreign matter removal)

[0161] To 14.0 g of the polyamic acid solution [A] used in Example 1, 4.38 g of the solution [a] containing a light-absorbing compound used in Example 1 and tris(2,3-epoxypropyl)isocyanurate were added Ester 0.630g, 2,4,6-tris(4-hydroxyphenylmethyl)-1,3-benzenediol 0.0450g, propylene glycol monomethyl ether 52.8g, propylene glycol monomethyl ether acetate 67.5g It stirred at room temperature for 30 minutes, and prepared the solution [2] of the composition for coating film formations used for foreign material removal.

[0162] (Evaluation of Coating Film Forming Composition for Foreign Matter Removal)

[0163] The solution [2] of the coating film-forming composition for foreign matter removal was coated on a silicon wafer substrate using a spinner, and fired at 200° C. for 60 seconds on a hot plate to form a film with a film thickness of 40 nm. Coating film for foreign matter removal. The o...

Embodiment 3

[0169] (Synthesis of polyamic acid)

[0170] By mixing 4.36g of pyromellitic dianhydride, 0.89g of diaminobenzoic acid, and 4.97g of 2,2-bis(3-amino-4-toluoyl)hexafluoropropane in 55.6g of propylene glycol monomethyl ether at 60 The reaction was carried out at °C for 25 hours to obtain a solution [B] containing a polyamic acid.

[0171] (Preparation of coating film-forming composition for foreign matter removal)

[0172] 4.38 g of the solution [a] containing the light-absorbing compound used in Example 1 and 0.630 g of tris(2,3-epoxypropyl)isocyanurate were added to 14.0 g of the solution [B] containing polyamic acid , 52.4 g of propylene glycol monomethyl ether, and 67.5 g of propylene glycol monomethyl ether acetate were stirred at room temperature for 30 minutes to prepare a solution [3] of a coating film-forming composition for foreign matter removal.

[0173] (Evaluation of Coating Film Forming Composition for Foreign Matter Removal)

[0174] The solution [3] of the co...

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Abstract

The purpose of the present invention is to provide: a simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Description

technical field [0001] The present invention relates to a composition for forming a coating film for foreign matter removal capable of removing foreign matter formed on a substrate by a simple method, a method for removing foreign matter on a substrate, a method for treating a substrate, and a method for manufacturing a laminated substrate. Preferably, it relates to the composition for coating film formation used for the removal of a foreign substance used in the temporary bonding process of the semiconductor wafer in manufacture of a semiconductor device. Background technique [0002] In the manufacture of semiconductor devices, especially in the so-called post-process, after bonding the semiconductor substrate (wafer) to the support substrate, performing back grinding (grinding), wiring production steps, etc., and then peeling the support substrate And the process of obtaining the desired semiconductor substrate. [0003] When pasting the support substrate, the wafer is p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C09D179/08C09D201/00
CPCC09D179/08C09D201/00C08G73/1039C08G73/1042C08G73/1064C08G73/1067C11D11/0058C11D11/0047C11D7/5004C11D3/3719C11D7/3263H01L21/02096H01L21/56H01L21/7806B08B7/0014C08G73/1032C08G73/1057C09J5/00C09J179/08C09J2479/08H01L21/02079H01L21/6836H01L2221/68327H01L2221/68386C09J2301/502Y10S156/93B32B38/10B32B43/006Y10T156/1111
Inventor 岸冈高广田村护臼井友辉绪方裕斗
Owner NISSAN CHEM IND LTD
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