Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Joining molded article and method for manufacturing same

A molding and precursor technology, applied in manufacturing tools, printed circuit manufacturing, welding equipment, etc., can solve the problem of difficult high-strength semiconductor chip components being bonded to the substrate, and achieve the effect of high thermal conductivity

Active Publication Date: 2019-11-05
MITSUBISHI MATERIALS CORP
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, regarding the Cu core Sn shell powder molded body described in Non-Patent Document 1, when a natural oxide film is formed on the surface of the Cu core Sn shell powder before molding, even if the molded body is placed on a semiconductor as a member to be joined Reflow is performed between the chip component and the substrate, and it is difficult for the Sn of the casing to infiltrate the surface of the Cu particles, and it is difficult to bond the semiconductor chip component to the substrate with high strength.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Joining molded article and method for manufacturing same
  • Joining molded article and method for manufacturing same
  • Joining molded article and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ＞

[0015] Such as figure 1 As shown, regarding the molded body 1 for joining according to the first embodiment of the present invention, the Cu core Sn shell powder 2 is press-molded to produce a granular or flake shape with a thickness of 20 to 400 μm.

[0016] 〔Cu core Sn shell powder〕

[0017] Such as figure 1 As shown in the enlarged view of (a), the Cu core Sn shell powder 2 as the raw material of the molded body for joining is composed of a core 2a and a shell 2b, wherein the core 2a is made of Cu, and the shell 2b covers the core 2a and Composed of Sn. The average particle size of the Cu core Sn shell powder 2 is 0.5 to 50 μm, preferably 1.0 to 20 μm. It is known that when the average particle size is less than 0.5 μm as the lower limit, it is not only difficult to produce a molded body precursor with a uniform density when performing press forming or roll forming described later, but also in normal operations such as 25° C. At the temperature of the material, Cu diffu...

no. 2 Embodiment approach ＞

[0030] Such as figure 2 As shown, the molded body 6 for joining according to the second embodiment of the present invention uses the same Cu core Sn shell powder 2 as that of the first embodiment ( figure 2 (a)) is roll-formed to produce flakes or pellets with a thickness of 20 to 400 μm.

[0031] 〔Manufacture of molded body precursor〕

[0032] Such as figure 2 As shown in (b), in an inert gas atmosphere such as nitrogen or argon, Cu core Sn shell powder 2 is subjected to powder roll molding with a powder rolling machine 20 to produce a molded body precursor 7 . The powder rolling machine 20 has a pair of cylindrical rolls 20a, 20b and a hopper 20c connected to the upper surfaces of these rolls. The roller 20a and the roller 20b rotate in opposite directions to each other, and at figure 2 In the process, the Cu core Sn shell powder 2 thrown into the hopper 20c is rolled downward, and the rolling body is comprised so that it may be guided in the horizontal direction by ...

Embodiment 1

[0042] A Cu core Sn shell powder having an average particle diameter of 0.5 μm, a Cu ratio of 75% by mass, and a Sn ratio of 25% by mass was prepared. Here, the compositional ratio of Cu and Sn in the Cu core Sn shell powder was measured by ICP emission spectroscopy (manufactured by Thermo Fisher Scientific, iCAP-6500Duo). In addition, the crystal structure of the core-shell structure is mainly composed of Cu and Sn, and was confirmed by a powder X-ray diffraction method (manufactured by PANalytical, multi-purpose X-ray diffractometer Empyrean). The above-mentioned Cu core Sn shell powder was uniaxially pressed using a die at 500 MPa for 300 seconds to obtain a square (□) granular molded body precursor with a thickness of 100 μm and a side length of 3 mm.

[0043] On the other hand, a liquid activator-containing material in which a general-purpose flux (92MS manufactured by Arakawa Chemical Industries, Ltd.) was diluted with an organic solvent α-terpineol was obtained so that ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The present invention is a joining molded article (1), composed of a compressed aggregate of a Cu-core Sn-shell powder (2), an activator-containing substance (4) for removing an oxide from a powder surface being present in open pores in a surface part and inside of the joining molded article, and the joining molded article containing Cu in a ratio of 55-95% by mass and Sn in a ratio of 45-5% by mass and having a thickness of 20-400 [mu]m.

Description

technical field [0001] The present invention relates to a molded body for bonding which is interposed between electronic components such as semiconductor chip elements and LED chip elements as members to be bonded and a substrate, and which is suitable for use when mounting electronic components as members to be bonded on a substrate, and its Manufacturing method. In addition, this international application claims priority based on Japanese Patent Application No. 71964 (Japanese Patent Application No. 2017-71964) filed on March 31, 2017, and the entire contents of Japanese Patent Application No. 2017-71964 are used in this international application . Background technique [0002] In recent years, wide bandgap semiconductors such as SiC that can operate at high temperatures exceeding 200° C. have attracted attention. As a bonding method for semiconductor chip elements that operate at high temperatures, a bonding method called Transient Liquid Phase Sintering (TLP method) in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B23K35/14B22F1/00B22F1/02B23K35/26B23K35/40B22F1/05B22F1/17
CPCB23K35/0244B23K35/262B23K35/302H05K3/3478B23K35/3603H05K2203/0405B22F2998/10B22F3/02B22F3/18B22F3/26B22F2999/00B22F7/062B22F7/08H01L24/29B22F1/05B22F1/17H01L2224/83825H01L24/27H01L2224/2711H01L24/83H01L2224/8381H01L2224/29347H01L2224/29411H01L24/743H01L2224/2712H01L2224/271H01L2224/05644H01L2224/04026H01L24/05H01L2224/83447H01L2224/83203H01L2224/83075H01L2224/83011H01L2224/83101H01L2224/32507H01L24/32H01L2224/32245H01L2224/0345H01L24/03B22F2201/20H01L2924/00014H01L2924/00012B23K35/40
Inventor 樋上晃裕村冈弘树岩田广太郎山口朋彦
Owner MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com