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Bismuth sodium titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient and preparation method thereof

A bismuth sodium titanate-based, piezoelectric thin film technology, applied in the field of electronic functional materials and devices, can solve the problems of lack of reports

Active Publication Date: 2021-12-07
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these studies mainly focus on ceramic materials, and related reports on thin film materials are still extremely scarce. As for Bi 0.5 Na 0.5 TiO 3 -PbTiO 3 Adding BiInO to the binary system film 3 How it affects the properties of materials has never been studied

Method used

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  • Bismuth sodium titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient and preparation method thereof
  • Bismuth sodium titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient and preparation method thereof
  • Bismuth sodium titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient and preparation method thereof

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preparation example Construction

[0033] (5) Film preparation: Pt / TiO obtained in step (3) at room temperature x / SiO 2 / Si substrates were spin-coated as follows:

[0034] (a) Pt / TiO obtained in step (3) at room temperature x / SiO 2 Carry out a spin coating on the / Si substrate, the spin speed is 2000~4000 rpm, and the coating time is 20~60 seconds;

[0035] (b) heat-treat the films obtained after step (a) in a tube furnace at 100-250°C for 3-5 minutes, at 350-450°C for 3-5 minutes, and at 700-750°C for 5 minutes. ~10 minutes;

[0036] (c) Repeat step (b) several times until the desired film thickness is achieved. Finally, it was annealed at 700-750 °C for 30-60 minutes to prepare a bismuth sodium titanate-based lead-free piezoelectric film with a high inverse piezoelectric coefficient.

[0037] (6) Use a sputtering machine to sputter a circular metal top electrode with a diameter of 0.3-1.0 mm on the surface of the piezoelectric film.

[0038] The following are more detailed implementation examples, t...

Embodiment 1

[0050] (1) According to the chemical composition formula 0.84Bi 0.5 Na 0.5 TiO 3 -0.15PbTiO 3 -0.01BiInO 3 The stoichiometric ratio of n-tetrabutoxide titanium and acetylacetone was weighed and dissolved in ethylene glycol methyl ether, wherein acetylacetone played the role of complexing n-tetrabutoxide titanium, and then the above solution was stirred at room temperature on a magnetic stirrer 20 minutes to get the precursor solution A;

[0051] (2) According to the chemical composition formula 0.84Bi 0.5 Na 0.5 TiO 3 -0.15PbTiO 3 -0.01BiInO 3 The stoichiometric ratio of bismuth nitrate pentahydrate, sodium acetate trihydrate, lead acetate trihydrate and indium nitrate hydrate is weighed. Since bismuth and sodium elements volatilize violently at high temperatures, bismuth nitrate pentahydrate, sodium acetate trihydrate, and indium nitrate trihydrate Weigh 10% lead acetate in excess, then dissolve the weighed drug in acetic acid, and stir at 45 °C for 1 hour to obtain ...

Embodiment 2

[0060] (1) According to the general formula of chemical composition 0.835Bi 0.5 Na 0.5 TiO 3 -0.15PbTiO 3 -0.015BiInO 3 The stoichiometric ratio of n-tetrabutoxide titanium and acetylacetone was weighed and dissolved in ethylene glycol methyl ether, wherein acetylacetone played the role of complexing n-tetrabutoxide titanium, and then the above solution was stirred at room temperature on a magnetic stirrer 20 minutes to get the precursor solution A;

[0061] (2) According to the general formula of chemical composition 0.835Bi 0.5 Na 0.5 TiO 3 -0.15PbTiO 3 -0.015BiInO 3 The stoichiometric ratio of bismuth nitrate pentahydrate, sodium acetate trihydrate, lead acetate trihydrate and indium nitrate hydrate is weighed. Since bismuth and sodium elements volatilize violently at high temperatures, bismuth nitrate pentahydrate, sodium acetate trihydrate, and indium nitrate trihydrate Weigh 10% lead acetate in excess, then dissolve the weighed drug in acetic acid, and stir at 45 ...

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Abstract

The invention relates to a bismuth sodium titanate-based low-lead piezoelectric film with a high inverse piezoelectric coefficient and a preparation method thereof. The chemical composition of the piezoelectric film is (0.85-x) Bi 0.5 Na 0.5 TiO 3 –0.15PbTiO 3 –xBiInO 3 , where x is the mole fraction, x=0-0.03, and not 0, the precursor is prepared by metal organic compound thermal decomposition method and coated on the substrate. Compared with the prior art, the bismuth sodium titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient prepared by the present invention has excellent piezoelectric performance, and the inverse piezoelectric coefficient reaches 123.1 picometer / volt.

Description

technical field [0001] The invention belongs to the field of electronic functional materials and devices, and in particular relates to a bismuth sodium titanate-based low-lead piezoelectric film with high inverse piezoelectric coefficient and a preparation method thereof. Background technique [0002] Piezoelectric film refers to a film material with piezoelectric properties and a thickness ranging from a few nanometers to tens of nanometers. Compared with bulk materials, piezoelectric thin films not only have similar mechanical, thermal, acoustic, optical and electrical properties, but also have the advantages of small size, low operating voltage, and integration with semiconductor processes, which makes them widely used in microelectronics. , optoelectronics, microelectromechanical and many other high-tech fields have broad application prospects. [0003] However, the piezoelectric films that are currently widely used in commercial applications are all piezoelectric films...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/622
CPCC04B35/475C04B35/62222C04B2235/3286C04B2235/443C04B2235/449C04B2235/656C04B2235/6567
Inventor 翟继卫吴双昊沈波
Owner TONGJI UNIV