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Surface treatment method of sapphire substrate and crucible therefor

A sapphire substrate and surface treatment technology, applied in the direction of post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of danger, time-consuming and laborious, low efficiency, etc., to optimize the processing effect, improve the processing efficiency, and facilitate the movement. Effect

Active Publication Date: 2019-11-22
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The traditional sapphire substrate surface treatment method generally includes cleaning the sapphire substrate with organic and inorganic acid, then placing it in a crucible, and annealing it in an air atmosphere; 2 Substrate, when the size of the substrate is large, the obtained surface of the substrate is messy, which cannot meet the needs of epitaxial growth. At the same time, inorganic acid cleaning usually inevitably introduces new pollutants and uncertain factors, reducing the substrate processing efficiency. stability
In addition, high temperature treatment (160°C) is usually required during inorganic acid cleaning, which requires a lot of time to heat the solution, which is not only dangerous, but also time-consuming and laborious, and the efficiency is low. At the same time, using air as the annealing atmosphere is not conducive to the atomic level of the sapphire substrate surface. generation of steps

Method used

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  • Surface treatment method of sapphire substrate and crucible therefor
  • Surface treatment method of sapphire substrate and crucible therefor
  • Surface treatment method of sapphire substrate and crucible therefor

Examples

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Embodiment 1

[0089] The surface treatment process of the sapphire substrate described in this embodiment adopts a traditional ark-shaped crucible, and the sapphire substrate is placed on one side corner of the crucible. The schematic diagram is as follows Figure 4 As shown, the sapphire substrate described in this embodiment is a C plane (0001), with a diameter of 3 inches, and its surface topography is as follows Figure 5 shown.

[0090] Described sapphire substrate surface treatment method comprises the following steps:

[0091] (1) The sapphire substrate is ultrasonically cleaned for 5 minutes by acetone, isopropanol, alcohol and deionized water in sequence, and the surface of the sapphire substrate is blown dry with nitrogen;

[0092] (2) the dried sapphire substrate according to the following Figure 4 Placed in the manner shown, the area of ​​the contact surface between the sapphire substrate and the edge of the crucible side wall is 2% of the surface area on one side of the sapp...

Embodiment 2

[0095] This embodiment adopts as figure 1 Described crucible, the placement mode of sapphire substrate is as follows image 3 As shown, the side length of the square of the end face of the cylindrical housing 1 is 2cm (i.e. the distance between the relative inner wall of the cylindrical housing), and the thickness of the shell wall of the cylindrical housing is 0.2cm. The cross-sectional shape of is a rectangle, the long side of the rectangle is 0.4cm, and the short side of the rectangle is 0.2cm. The sapphire substrate described in this embodiment is a C-plane (0001) with a diameter of 3 inches.

[0096] Described sapphire substrate surface treatment method comprises the following steps:

[0097] (1) The sapphire substrate is ultrasonically cleaned for 5 minutes by acetone, isopropanol, alcohol and deionized water in sequence, and the surface of the sapphire substrate is blown dry with nitrogen;

[0098](2) Place the dried sapphire substrate horizontally on the open end of ...

Embodiment 3

[0101] Compared with Example 1, this embodiment replaces the temperature of annealing treatment with 1400°C, the time of annealing treatment is replaced with 3h, the flow rate of oxygen is 80 sccm, the pressure of oxygen atmosphere is 1 time of standard atmospheric pressure, other conditions and embodiment 1 compared to the exact same.

[0102] The sapphire substrate prepared in this example has a clean atomic-level step surface, that is, the surface of the sapphire substrate is free of contamination, the step width is uniform, and the step height is 200-400pm, which belongs to the height of the single atomic layer of sapphire, and the steps are continuous without breakpoints .

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Abstract

The invention relates to a surface treatment method of a sapphire substrate and a crucible therefor. The method comprises the following steps: placing a sapphire substrate on a crucible; carrying outannealing treatment, wherein the surface of the sapphire substrate is an atomic-scale step. By means of the method, the contact area of the sapphire substrate and the crucible is controlled to be smaller than or equal to 2% of the single-side surface area of the sapphire substrate; so that the distribution of heat and air flow on the surface of the sapphire substrate in the annealing treatment process is more uniform; therefore, the sapphire substrate with atomic-scale steps on the surface is obtained. The method is high in repeatability, meanwhile, the invention further provides a crucible for surface treatment of the sapphire substrate, the crucible comprises a cylindrical shell with one end being an open end, the open end is used for containing the sapphire substrate, and therefore thetreatment effect and efficiency of the surface treatment process of the sapphire substrate are higher.

Description

technical field [0001] The invention relates to the field of epitaxial growth of semiconductor materials, in particular to a surface treatment method of a sapphire substrate and a crucible used therefor. Background technique [0002] Sapphire crystal is a hexagonal crystal system, which is a hexagonal semiconductor material equivalent to gallium nitride and zinc oxide. It has a low lattice mismatch rate, and due to mature production technology, stable crystal quality and good high temperature stability, it can adapt to high temperature growth. The advantages of high environmental and mechanical strength quickly become the substrate material for epitaxial growth. [0003] In terms of semiconductor material epitaxy technology, substrate processing is a key factor in material growth. During epitaxy, there needs to be a corresponding epitaxial relationship between the substrate surface crystal plane and the growth layer. Different crystal planes of the substrate will form growt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C30B25/18C30B33/00
CPCC30B25/186C30B33/005H01L21/02005
Inventor 冯博渊丁孙安李坊森冯加贵何高航程飞宇武彪
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI