Flexible thin film transistor and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a flexible thin film transistor and a preparation method thereof. The device comprises a bottom gateelectrode (4), a gate medium layer (1), a source electrode (2), a drain electrode (3) and a transistor channel layer (5) from bottom to top. In the flexible thin film transistor, a polyimide thin filmis directly taken as the gate medium layer; after the polyimide thin film is subjected to surface processing, a catalytic seed layer is independently subjected to jet printing on two surfaces of thepolyimide thin film; then, the polyimide thin film is put in electroless copper liquid to carry out the chemical growth of metallic copper; a copper source electrode (2), a copper drain electrode (3)and a copper grid electrode (4) are independently formed on two surfaces of a polyimide substrate; and an active layer is formed by ink jet printing. The method for forming the flexible thin film transistor is simple, efficient and low in cost. The prepared flexible thin film transistor has the advantages of simple structure, good electrical properties and good bending resistance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a flexible thin film transistor and a preparation method thereof. Background technique [0002] Transition metal chalcogenides with graphene-like layered structures have attracted much attention in recent years. Most transition metal chalcogenides have a natural band gap of 1-2eV, and the material has excellent physical properties, which makes them have great application potential in logic digital integrated circuits. In particular, the direct bandgap properties of single-layer transition metal chalcogenides make them important for applications in optics, optoelectronic devices, and sensors. [0003] In the traditional process of preparing transistors, the device channel is prepared by photolithography technology, which needs to go through tedious processes such as photolithography, development, and etching. Nowadays, inkjet printing technology is incr...

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Problems solved by technology

[0004] At present, the application of two-dimensional transition metal chalcogenide materials in thin film transistors has the following problems: (1) single-layer or few-layer two-dimensional transition metal chalcogenide materials are mostly prepared by chemical vapor deposition, and then transferred process to SiO 2 On / Si substrates, the operation is difficult, the process flexibility is poor, the process cycle is long, and the device yield is low; (2) The performance of thin-film transistors based on few-layer two-dimensional transition metal chalcogenide materials is poor; (3) Using traditional micromachining technology The preparation of the source and drain has the problems of high production cost and complicated process; (4) In the research on the preparation of flexible thin film transistors by printing technology, the source, drain and gate are prepared by printing silver conductive ink, and the printed silver conductive ink is used to prepare the source, drain and gate. Organic polymer insulating materials are used as the gate insulating layer, which leads to high preparation costs, poor compatibility between functional layers, and the limitation of flexible substrates to high temperature annealing leads to poor device performance

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