Preparation method of doped zinc oxide nanocrystal, electron transport layer, light-emitting device

A technology of zinc oxide nanocrystals and electron transport layers, which is applied in the direction of electric solid devices, zinc oxide/zinc hydroxide, nanotechnology, etc., can solve the problems of limited magnesium doping amount, etc., to increase the doping concentration and improve the luminous performance Effect

Active Publication Date: 2022-08-02
NANJING TECH CORP LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

An object of the present invention is to provide a preparation method of doped zinc oxide nanocrystals, which solves the problem of limited magnesium doping amount in existing zinc oxide nanocrystals

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  • Preparation method of doped zinc oxide nanocrystal, electron transport layer, light-emitting device
  • Preparation method of doped zinc oxide nanocrystal, electron transport layer, light-emitting device

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preparation example Construction

[0025] At present, the common method for preparing doped zinc oxide nanocrystals is to mix zinc salt and doped metal salt, and then add alkali to the mixed solution for reaction, and after the reaction, a solution containing doped zinc oxide nanocrystals is obtained. When the doping amount of the heterometallic salt exceeds a certain value, when the alkali is added and the reaction is carried out, the metal salt and the alkali are likely to directly form a precipitate, resulting in a very turbid solution in the initial stage of the reaction, and the zinc oxide nanocrystals cannot continue to be synthesized. In order to solve the problem of limited doping concentration of doping elements in doped zinc oxide nanocrystals, the present invention provides a preparation method of doped zinc oxide nanocrystals, comprising the following steps:

[0026] S1, the zinc salt, the doped metal salt and the organic amine are mixed in a solvent to obtain a mixed solution, and the ratio of the a...

Embodiment 1

[0045] Preparation of magnesium-doped zinc oxide nanocrystals (20% magnesium doping):

[0046] (1) Weigh 2.4mmol of zinc acetate dihydrate and 0.6mmol of magnesium acetate tetrahydrate, place in a 50mL three-necked flask, then add 30mL of dimethyl sulfoxide, stir and dissolve in a constant temperature water bath (0 ℃~60 ℃) until there is no color transparent solution;

[0047] (2) to the clear solution of step (1), add the butylamine of 3mmol;

[0048] (3) take by weighing the tetramethylammonium hydroxide pentahydrate of 5mmol, be dissolved in the absolute ethanol of 10mL, the solution obtained is gradually added dropwise in the solution of step (2) with a dropper, and the dropping time is 10 minutes;

[0049] (4) After the dropwise addition is completed, continue stirring at a constant temperature for 1 to 48 hours and then stop the reaction.

[0050] The magnesium-doped zinc oxide nanocrystals prepared in this embodiment are used to prepare an inverse light-emitting devi...

Embodiment 2

[0063] Preparation of magnesium-doped zinc oxide nanocrystals (25% magnesium doping):

[0064] (1) Weigh 2.25mmol of zinc acetate dihydrate and 0.75mmol of magnesium acetate tetrahydrate, place in a 50mL three-necked flask, then add 30mL of dimethyl sulfoxide, stir and dissolve in a constant temperature water bath (0 ℃~60 ℃) until there is no color transparent solution;

[0065] (2) to the clear solution of step (1), add 7.5mmol of butylamine;

[0066] (3) take by weighing the tetramethylammonium hydroxide pentahydrate of 5mmol, be dissolved in the absolute ethanol of 10mL, the solution obtained is gradually added dropwise in the solution of step (2) with a dropper, and the dropping time is 10 minutes;

[0067] (4) After the dropwise addition is completed, continue stirring at a constant temperature for 1 to 48 hours and then stop the reaction.

[0068] The magnesium-doped zinc oxide nanocrystals prepared in this example are used to prepare an inverse light-emitting device,...

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Abstract

The invention discloses a preparation method of doped zinc oxide nanocrystals, an electron transport layer and a light-emitting device. Wherein, the preparation method of doped zinc oxide nanocrystals includes the following steps: S1, mixing zinc salt, doped metal salt and organic amine in a solvent to obtain a mixed solution, and the amount of zinc element in the zinc salt is the same as that in the doped metal salt. The ratio of the amount of the metal element is (100:1)~(1.5:1), and the organic amine is suitable for forming a complex with the doped metal salt; S2, adding alkali to the mixed solution in step S1 to react, and the reaction Then a solution containing doped zinc oxide nanocrystals is obtained. The preparation of doped zinc oxide nanocrystals by the method provided by the invention can break through the upper limit of the doping amount of the existing doping metal in the zinc oxide nanocrystals, and significantly increase the doping amount of the doping metal in the doped zinc oxide nanocrystals , which is conducive to giving full play to the beneficial effects of doping metals.

Description

technical field [0001] The invention relates to the technical field of light-emitting devices, in particular to a preparation method of doped zinc oxide nanocrystals, an electron transport layer and a light-emitting device. Background technique [0002] Zinc oxide (ZnO) is a typical n-type oxide semiconductor with high carrier mobility, tunable energy band structure, and high transmittance in the visible light band. Colloidal zinc oxide nanocrystals also have excellent solution availability. Processability. At present, ZnO nanocrystals are widely used as electron transport layers in high-performance quantum dot light-emitting diodes. However, when the widely used low-temperature alcohol phase colloidal zinc oxide nanocrystal film is in contact with the quantum dot layer, the existence of a large number of surface states causes the interaction between the excited state in the zinc oxide nanocrystal and the quantum dot, resulting in the remarkable luminescence performance of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00H01L51/50H01L51/54
CPCC01G9/02B82Y30/00B82Y40/00H10K50/115H10K50/165H10K2102/00
Inventor 张振星高远李明高培源
Owner NANJING TECH CORP LTD
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