Cadmium telluride nanocrystalline solar cell and preparation method thereof

A technology of solar cells and nanocrystals, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of few application reports, and achieve the effects of simple and convenient preparation process, enhanced stability, and increased current

Active Publication Date: 2019-12-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are few reports on the application of organic interface materials in nanocrystalline solar cells

Method used

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  • Cadmium telluride nanocrystalline solar cell and preparation method thereof
  • Cadmium telluride nanocrystalline solar cell and preparation method thereof
  • Cadmium telluride nanocrystalline solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Effects of different concentrations of PTAA solutions on CdTe nanocrystalline batteries

[0048] The preparation steps of the cadmium telluride nanocrystalline solar cell are as follows:

[0049] (1) Cleaning of ITO conductive glass substrate: ultrasonically oscillate the substrate (15mm×15mm in thickness, 80nm in ITO) in toluene for 5min at an ultrasonic frequency of 35KHz, then add alkali in acetone and dropwise Ultrasonic oscillation in deionized water of liquid for 15min, the ultrasonic frequency is 35KHz, then ultrasonically in deionized water, the ultrasonic frequency is 35KHz, 10min each time, repeat 5 times until there are no bubbles on the surface of ITO, finally add isopropanol ultrasonic, the ultrasonic frequency is 35KHz , and ultrasonically oscillated for 10 minutes to clean the surface of the ITO substrate, and then put the ITO sheet into a constant temperature oven at 85° C. for static drying to obtain a cleaned ITO conductive glass substrate.

[0050] (...

Embodiment 2

[0062] Effects of different heat treatment temperatures of PTAA on CdTe nanocrystalline batteries

[0063] The preparation steps of the cadmium telluride nanocrystalline solar cell are as follows:

[0064] Except that the thickness of the CdTe film in step (4) is changed to 500nm, the concentration of PTAA solution in step (5) is changed to 5mg / mL, and the heat treatment step is changed to: Heat treatment at 120° C., 130° C., 140° C. and 180° C. for 10 minutes, and other steps in Example 2 are the same as in Example 1. A cadmium telluride nanocrystalline solar cell device with a structure of ITO / ZnO / CdS / CdSe / CdTe / PTAA / Au is obtained.

[0065] The relevant parameters of the cadmium telluride nanocrystalline solar cell device obtained in Example 2 are compared in Table 2. I in Table 2 sc stands for short-circuit current, V oc Represents the open circuit voltage, FF represents the fill factor, and PCE represents the photoelectric conversion efficiency.

[0066] Table 2 Examp...

Embodiment 3

[0070] Effects of different Spiro heat treatment temperatures on CdTe nanocrystalline batteries

[0071] The preparation steps of the cadmium telluride nanocrystalline solar cell are as follows:

[0072] Steps (1)-(3) are the same as in Example 1, and in step (4) the CdTe thin film is changed to 5 layers stacked with a total thickness of 500nm.

[0073] (5) Preparation of Spiro-OMeTAD thin film: 72mgSpiro-OMeTAD, 9mgLi-TFSI, 29μl TBP are dissolved in the mixed solvent that 1mL chlorobenzene and 0.1mL acetonitrile are formed, magnetic sub-stirring overnight, obtain light orange solution, step (4) The treated substrate is placed on a homogenizer (KW-4A type), the above-mentioned light orange solution is added dropwise, and a Spiro-OMeTAD monolayer is obtained by high-speed spin coating (the spin coating rate is 2000rpm, and the time is 20s), and placed on the heating table Heat treatment was carried out for 10 minutes to remove the organic solvent, and the thickness of the obta...

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Abstract

The invention discloses a cadmium telluride nanocrystalline solar cell and a preparation method thereof. The solar cell comprises a substrate, and a cathode layer, a cathode interface layer, a windowlayer, a photoactive layer, an anode interface layer and an anode layer which are stacked on the substrate in sequence, wherein the anode interface layer is a Spiro-OMeTAD film with the thickness ranging from 170nm to 240nm or a poly[bis(4-phenyl)(2, 4, 6-trimethylphenyl)amine] film with the thickness ranging from 10nm to 40nm. The solar cell is advantaged in that by introducing an organic material as a hole transport layer, recombination of carriers is effectively reduced, the electric leakage phenomenon is ameliorated, compared with a traditional inverted solar cell, the short-circuit current and the open-circuit voltage are improved, and performance of devices is improved. An all-solution method is adopted for processing, cost is low, manufacturing is easy and convenient, and large-scale production is expected to achieve.

Description

technical field [0001] The invention belongs to the field of photoelectric devices, and in particular relates to a cadmium telluride nanocrystalline solar cell and a preparation method thereof. Background technique [0002] The energy issue is the greatest crisis facing mankind in this century. While developing and using energy, it has become an important global research topic to protect the earth's environment and ecology on which human beings depend. Solar energy is the most abundant renewable energy source, and photovoltaic conversion is one of the fastest-growing, most fruitful, most dynamic and promising research fields for effective use of solar energy in recent years. [0003] In recent years, thin-film solar cells have developed rapidly, mainly including silicon-based thin-film solar cells, inorganic compound thin-film solar cells, organic polymer thin-film solar cells and nanocrystalline solar cells. Among them, the solution method processing nanocrystalline solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0224H01L31/0384H01L31/18
CPCH01L31/02167H01L31/022425H01L31/03845H01L31/1836Y02E10/50Y02P70/50
Inventor 覃东欢吴婉华罗恺楹谢斯航郭秀珍
Owner SOUTH CHINA UNIV OF TECH
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