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A zinc oxide-based varistor doped with nitrogen ions and its preparation method

A varistor, zinc oxide-based technology, applied in varistor cores, varistors, etc., can solve the problems of deepening N-type semiconductors, etc., to increase width, improve nonlinear coefficient, and varistor Effect of Voltage Gradient Boost

Active Publication Date: 2021-09-21
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above acceptor doping methods have shortcomings. When doping with alkali metal ions or silver ions, in addition to replacing zinc ions to form acceptor doping, it may also enter interstitial sites to form donor doping, thus It may make the concentration of donor doping higher than that of acceptor doping to deepen the N-type semiconductor

Method used

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  • A zinc oxide-based varistor doped with nitrogen ions and its preparation method
  • A zinc oxide-based varistor doped with nitrogen ions and its preparation method
  • A zinc oxide-based varistor doped with nitrogen ions and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] The preparation method of the above-mentioned zinc oxide-based varistor doped with nitrogen ions, the steps are as follows:

[0031] (1) In molar parts, take the first secondary component, the second secondary component, and the third secondary component and uniformly mix, and ball mill to make additive slurry;

[0032] (2) After the main component and the fourth subcomponent are dispersed with deionized water, they are uniformly mixed with the additive slurry obtained in step (1), and then polyvinyl alcohol solution is added to make a spray slurry; Measure, add 0.8 to 1.2 grams of polyvinyl alcohol solution per 100 grams;

[0033] (3) Spray-drying and granulating the spray slurry obtained in step (2) by using a spray-drying tower;

[0034] (4) dry pressing the granulated powder obtained in step (3) into a disc-shaped embryo body;

[0035] (5) sintering the green body obtained in step (4) after debinding at a temperature of 1100-1145° C. to obtain a zinc oxide-based p...

Embodiment 1~6

[0039] The distribution ratio of each component of the piezoresistor is according to Table 1, and a total of 7 groups of samples were produced, including a group of comparison samples. The comparison sample is without adding C 3 N 4 general formula.

[0040] Press the molar fraction shown in table 1, take by weighing the first secondary component Bi 2 o 3 、Co 3 o 4 、Ni 2 o 3 , MnCO3 , the second subcomponent Sb 2 o 3 and the third subcomponent C 3 N 4 , and mix evenly, add deionized water and mix ball mill to make additive slurry. Put the main component ZnO into the mixing tank, add ammonium salt dispersant, and add deionized water to disperse at the ratio of ZnO: deionized water = 1:0.8, and then add the required amount of the fourth auxiliary component Al(NO 3 ) 3 9H 2 O solution, uniformly stirred to make the main component slurry, slowly adding the additive slurry while stirring the main component slurry, and then adding the polyvinyl alcohol solution. The a...

Embodiment 7~9

[0049] The chemical composition of embodiment 7,8,9 is identical with embodiment 1,2,3 respectively, and the difference with embodiment 1~3 is that sintering temperature is respectively 1120 ℃, 1130 ℃, 1145 ℃, by increasing sintering temperature to make implementation The varistor potential gradients in examples 7, 8, and 9 are reduced to approximately the same as those of the comparison sample, and then the pulse impact test is performed, and the electrical performance test results are shown in Table 3 (the residual voltage ratio in the table is the varistor through the peak value. When the wave is 8 / 20μs of 1000A, the ratio of residual voltage to varistor voltage). It can be seen that the residual pressure ratios of Examples 7-9 are all lower than those of the control sample.

[0050] In summary, the nitrogen-doped zinc oxide-based varistor prepared by the method of the present invention has improved varistor voltage gradient and nonlinear coefficient compared with the compa...

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Abstract

The invention relates to a piezoresistor and its preparation technology, which is a zinc oxide-based piezoresistor doped with nitrogen ions and a preparation method thereof. The content of each component contained in the varistor is as follows: main component, ZnO 100 parts; subcomponent for realizing nitrogen ion doping, 1-3 parts; metal compound subcomponent, 2.802-5.005 parts. During preparation, the components are firstly mixed to form a spray slurry; then spray-dried and granulated; after dry-pressing and forming, the glue is removed and sintered. Compared with the varistors of the comparison group without nitrogen doping, the present invention improves the varistor voltage gradient and nonlinear coefficient, reduces the residual voltage ratio, and improves the comprehensive performance.

Description

technical field [0001] The invention relates to a piezoresistor and its preparation technology, in particular to a zinc oxide-based piezoresistor doped with nitrogen ions and a preparation method thereof. Background technique [0002] Zinc oxide varistor ceramic material is a semiconductor electronic ceramic material, which has excellent nonlinear current-voltage relationship and good surge current absorption capacity, and can be made into varistors to protect power electronic circuits. In actual use, the varistor is connected in parallel at both ends of the electronic circuit to be protected. When there is a surge voltage at both ends of the circuit, the resistance value of the varistor decreases rapidly, absorbing excess current to protect the sensitive electronic circuit. [0003] At present, the most widely used formulation of zinc oxide varistor ceramic materials is ZnO as the main body, adding a small amount of Bi 2 o 3 , Sb 2 o 3 、Co 2 o 3 , MnO 2 、Ni 2 o 3 、...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/634C04B35/638H01C7/112
CPCC04B35/453C04B35/622C04B35/63416C04B35/638C04B2235/3217C04B2235/3267C04B2235/3275C04B2235/3279C04B2235/3294C04B2235/3298C04B2235/3852C04B2235/6567C04B2235/95H01C7/112
Inventor 卢振亚程宣仲杨凤金
Owner SOUTH CHINA UNIV OF TECH