Manufacturing method for undoped transistor device

Abstract

The invention discloses a manufacturing method for an undoped transistor device. According to the method, a first contact hole etching stop layer is deposited on a semiconductor structure formed on asubstrate, then a first interlayer dielectric layer is deposited on the first contact hole etching stop layer, CMP planarization is carried out, a source drain (SD) electrode metal contact pattern isdefined, contact hole photoetching and etching are carried out, and finally source drain contact metal and local interconnection metal are deposited. The process can be applied to a front gate processand a rear gate process. When the method is applied to a rear gate process, a dummy gate is firstly formed, then a dummy gate electrode material in a trench is removed in a subsequent process, and agate medium, a metal gate and interconnection lead metal are deposited. According to the method, the parasitic capacitance problem caused by deposition of unnecessary source-drain metal on the side wall surface of the side wall can be effectively avoided.

Description

technical field [0001] The invention relates to a carbon nanotube CMOS integrated circuit technology, in particular to a method for manufacturing an undoped thin film transistor. Background technique [0002] As semiconductor technology continues to shrink down to technology nodes below 3nm, silicon-based integrated circuits are very likely to reach the limits of silicon materials and physical quantum mechanics. The continuous development of microelectronics urgently needs to find new materials with more potential and advantages to replace silicon materials and break through the limit of Moore's law. Carbon nanotubes (CNTs) have ultra-high carrier mobility, mean free path, and nanometer-scale diameter, and can be used to construct nanometer field-effect transistors with faster speed, lower power consumption, and smaller size, so carbon Nanotube (CNTs) electronics is considered to be one of the future information technologies most likely to replace silicon-based CMOS devices...

AI Technical Summary

Problems solved by technology

[0006] Therefore, the effective manufacture of source-drain contact metals has become one of the biggest differences in the manufacturing process of carbon nanotube devices compared with traditional silicon-based devices, and the biggest challenge is to form them in an efficient and self-aligned manner Source-drain contact metal, which has become a major obstacle restricting the development of carbon nanotube devices

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