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Method for preparing ReS2 film by atomic layer deposition

An atomic layer deposition, rhenium disulfide technology, applied in coating, gaseous chemical plating, metal material coating technology and other directions, can solve problems such as explosive, toxic gas, pipeline danger, etc., achieve good photoelectric performance, stoichiometric than stable, widely used effect

Inactive Publication Date: 2020-01-24
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using ReCl 5 and H 2 As a precursor source, S mainly has the following problems: H 2 S gas is poisonous and explosive, not suitable for large-scale production; there is a large amount of HCl (hydrogen chloride) in the by-products of the reaction, which is very easy to retest the pipeline of the equipment and cause danger
[0005] In the patent "A Method for Atomic Layer Deposition of Rhenium Disulfide Thin Film" [CN 110205605 A], Liu Lei et al. enriched the choice of rhenium sources as carbonyl rhenium, rhenium fluoride and rhenium chloride, but the sulfur precursor source still used Traditional H 2 S gas requires an additional by-product treatment device for treatment, but the problem of pipeline corrosion caused by by-products has not yet been solved

Method used

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  • Method for preparing ReS2 film by atomic layer deposition
  • Method for preparing ReS2 film by atomic layer deposition
  • Method for preparing ReS2 film by atomic layer deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A rhenium disulfide film prepared by atomic layer deposition is prepared according to the following steps:

[0035] (1) Put the cleaned and dried silicon substrate into the ALD deposition chamber, and raise the temperature to 400°C after the vacuum degree of the chamber reaches 5-8hPa;

[0036] (2) put C 8 h 5 o 3 The temperature of the Re precursor source is heated to 125°C, and a complete deposition cycle is formed according to the Re source deposition twice and the S source deposition once, the pulse time is set to 1.5s, and the carrier gas flow rate of high-purity nitrogen is 100 sccm, that is: the first C 8 h 5 o 3 Re pulse / high-purity nitrogen purge 3s; 2nd C 8 h 5 o 3 Re pulse / high-purity nitrogen purge 6s; SH(CH 2 ) 2 The SH pulse time is 1s / high-purity nitrogen purge 6s, the carrier gas flow is 120sccm; complete a complete ReS 2 Loop; follow C 8 h 5 o 3 Re (Cyclopentadiene Tricarbonyl Rhenium) Pulse / High Purity Nitrogen Purge / C 8 h 5 o 3 ...

Embodiment 2

[0039] A rhenium disulfide thin film prepared by atomic layer deposition, similar to Example 1, is prepared according to the following steps:

[0040] (1) Put the cleaned and dried silicon substrate into the ALD deposition chamber, and raise the temperature to 350°C when the chamber vacuum reaches 5-8hPa;

[0041] (2) put C 8 h 5 o 3 The temperature of the Re precursor source is heated to 120°C, the pulse time is set to 1.2s, and the carrier gas flow rate of high-purity nitrogen is 80 sccm. A complete deposition cycle is formed according to the Re source deposition twice and the S source deposition once, namely: the first C 8 h 5 o 3 Re pulse / high-purity nitrogen purge 2s; 2nd C 8 h 5 o 3 Re pulse / high-purity nitrogen purge 4s; SH(CH 2 ) 2 The SH pulse time is 0.5s, the high-purity nitrogen purge is 5s, and the carrier gas flow rate is 100sccm; complete a complete ReS 2 cycle, according to C 8 h 5 o 3 Re (Cyclopentadiene Tricarbonyl Rhenium) Pulse / High Purity...

Embodiment 3

[0043] A rhenium disulfide thin film prepared by atomic layer deposition, similar to Example 1, is prepared according to the following steps:

[0044] (1) Put the cleaned and dried silicon substrate into the ALD deposition chamber, and raise the temperature to 450°C when the chamber vacuum reaches 5-8hPa;

[0045] (2) put C 8 h 5 o 3 The temperature of the Re precursor source is heated to 130°C, the pulse time is set to 2s, and the carrier gas flow rate of high-purity nitrogen is 120 sccm. A complete deposition cycle is formed according to the Re source deposition twice and the S source deposition once, namely: the first C 8 h 5 o 3 Re pulse / high-purity nitrogen purge 4s; 2nd C 8 h 5 o 3 Re pulse / high-purity nitrogen purge 6s; SH(CH 2 ) 2 The SH pulse time is 1.2s, the high-purity nitrogen purge is 8s, and the carrier gas flow rate is 120sccm; complete a complete ReS 2 cycle, according to C 8 h 5 o 3 Re (Cyclopentadiene Tricarbonyl Rhenium) Pulse / High Purity N...

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Abstract

The invention relates to a method for preparing a ReS2 film by atomic layer deposition. The deposition temperature in a cavity of an atomic layer deposition system is raised to 350-450 DEG C; the temperature of the Re precursor source C8H5O3Re is set to be 120-135 DEG C, and the carrier gas flow rate is 80-120 sccm; the carrier gas flow of the S precursor source SH(CH2)2SH is 100-150 sccm. Duringthe deposition cycle, the Re precursor source C8H50O3Re time is 1.2-2.5 s, and the pulse time of SH(CH2)2SH is 0.5-1.5 s, a ReS2 deposition cycle is formed by two times of Re source deposition and onetime of S source deposition, thickness of the MoS2 film can be controlled by the number of cycles. The method can effectively solve the problem of excessive S defects in the atomic layer deposition process, and the ReS2 film with stable stoichiometry and good photoelectric performance can be obtained without additional high temperature vulcanization.

Description

technical field [0001] The invention relates to a two-dimensional thin film material, in particular to a method for preparing a rhenium disulfide thin film by atomic layer deposition. Background technique [0002] Many transition metal sulfides have a layered structure similar to graphite and are classified as new two-dimensional materials. Different from the graphene structure, most transition noble metal sulfides have a direct band gap capable of absorbing visible light and excellent electron mobility in a few layers, so they have good optoelectronic, mechanical and mechanical properties at the same time. The most special one is ReS 2 Thin films, different from existing transition metal sulfide semiconductor materials such as MoS 2 、WS 2 etc. ReS 2 The film exhibits a bandgap structure independent of the number of stacked layers, that is, the bulk ReS 2 with few-layer ReS 2 All have a direct bandgap structure. Furthermore, the few-layer ReS 2 It also has a unique l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/455
CPCC23C16/305C23C16/45525
Inventor 崔大祥卢静白仕亨郑棣元蔡葆昉葛美英王丹金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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