A solar-blind ultraviolet single-photon avalanche detector

Abstract

The invention discloses a sun-blind ultraviolet single-photon avalanche detector, which includes an avalanche photodetector and a plurality of nanowires; the avalanche photodetector is a sun-blind ultraviolet aluminum gallium nitrogen avalanche photodetector working in a Geiger mode The nanowires are gallium nitride nanowires with negative photoconductive effect; the multiple nanowires are arranged on the photosensitive surface of the avalanche photodetector; the positive ends of the multiple nanowires are connected in parallel to the voltage source positive electrode; the negative ends of the plurality of nanowires are connected in parallel to the negative electrode of the avalanche photodetector; the positive electrode of the avalanche photodetector is connected to the negative electrode of the voltage source. The invention uses the negative photoconductive effect of the nanowire to work, so that the avalanche current in the avalanche detector is quenched in time after the avalanche breakdown, and the protection diode does not need the traditional quenching circuit, avoiding the large area occupied by the quenching circuit , Inconvenient integration, and very costly.

Description

technical field [0001] The invention relates to an avalanche detector, in particular to a sun-blind ultraviolet single-photon avalanche detector integrating a nanowire protection circuit. Background technique [0002] In recent years, the research work of semiconductor nanowires has made great progress, and its application fields include integrated circuits, transistors, lasers, light-emitting diodes, single-photon devices, and solar cells. Among them, among many semiconductor materials, GaN-based semiconductor materials have a wide direct band gap, and are widely used in high-frequency, High-temperature, high-power electronic devices and optoelectronic devices have become the third-generation semiconductor materials after the first-generation germanium and silicon semiconductor materials and the second-generation gallium arsenide and indium phosphide compound semiconductor materials. Therefore, the preparation of GaN nanowires has become a research hotspot. [0003] The a...

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Problems solved by technology

However, the traditional quenching circuit design is relatively complicated, limited by the electrical parasitic parameters of the SPAD. In the Geiger mode, only considering the static parameters of the APD will make the result inaccurate, but the dynamic parameters change quickly, and a more accurate SPAD equivalent circuit model needs to be designed.

Sometimes the quenching circuit is based on passive quenching and improved with an active charging circuit. Although it can improve the detection efficiency, it also takes up more area and is not easy to integrate, making it difficult to increase the duty cycle of the detector.

It takes a long time to quench and reset during operation, which increases power consumption, reduces the detection performance of the diode, reduces reliability and stability, and is very costly.

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