Solar-blind ultraviolet single-photon avalanche detector

Abstract

The invention discloses a solar-blind ultraviolet single-photon avalanche detector, which comprises an avalanche photodetector and a plurality of nanowires. The avalanche photodetector is a solar-blind ultraviolet aluminum gallium nitrogen avalanche photodetector working in a Geiger mode. The nanowires are gallium nitride nanowires with a negative photoconduction effect. The nanowires are arrangedon the photosensitive surface of the avalanche photodetector. The positive ends of the nanowires are connected in parallel and then are connected to the positive electrode of a voltage source. The negative ends of the nanowires are connected in parallel and then are connected to the negative electrode of the avalanche photodetector. The positive electrode of the avalanche photodetector is connected with the negative electrode of the voltage source. The avalanche detector works by utilizing the negative photoconduction effect of the nanowires, so that the avalanche current in the avalanche detector is quenched in time after avalanche breakdown, and a diode is protected. A traditional quenching circuit is not needed, and the defects of large occupied area, inconvenience of integration and high cost of the quenching circuit are overcome.

Description

technical field [0001] The invention relates to an avalanche detector, in particular to a sun-blind ultraviolet single-photon avalanche detector integrating a nanowire protection circuit. Background technique [0002] In recent years, the research work of semiconductor nanowires has made great progress, and its application fields include integrated circuits, transistors, lasers, light-emitting diodes, single-photon devices, and solar cells. Among them, among many semiconductor materials, GaN-based semiconductor materials have a wide direct band gap, and are widely used in high-frequency, High-temperature, high-power electronic devices and optoelectronic devices have become the third-generation semiconductor materials after the first-generation germanium and silicon semiconductor materials and the second-generation gallium arsenide and indium phosphide compound semiconductor materials. Therefore, the preparation of GaN nanowires has become a research hotspot. [0003] Avala...

AI Technical Summary

Problems solved by technology

However, the traditional quenching circuit design is relatively complicated, limited by the electrical parasitic parameters of the SPAD. In the Geiger mode, only considering the static parameters of the APD will make the result inaccurate, but the dynamic parameters change quickly, and a more accurate SPAD equivalent circuit model needs to be designed.

Sometimes the quenching circuit is based on passive quenching and improved with an active charging circuit. Although it can improve the detection efficiency, it also takes up more area and is not easy to integrate, making it difficult to increase the duty cycle of the detector.

It takes a long time to quench and reset during operation, which increases power consumption, reduces the detection performance of the diode, reduces reliability and stability, and is very costly.

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