Preparation method for single-layer MoS2-WS2 transverse heterojunction

A mos2-ws2, heterojunction technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of strict experimental conditions, influence of interface amorphization, difficulty in obtaining high-quality samples, etc., and achieve controllable Strong, simple effect

Pending Publication Date: 2020-02-18
BEIJING UNIV OF TECH
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Problems solved by technology

[0005] Two-dimensional material heterojunctions are mainly divided into vertical heterojunctions and lateral heterojunctions. At present, most of the theoretical and experimental researches focus on vertical two-dimensional heterojunctions. Lateral heterojunctions are required for lattice matching of heterogeneous materials. High, the experimental conditions are strict, and i

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  • Preparation method for single-layer MoS2-WS2 transverse heterojunction
  • Preparation method for single-layer MoS2-WS2 transverse heterojunction
  • Preparation method for single-layer MoS2-WS2 transverse heterojunction

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[0030] Example 1

[0031] A single layer of MoS 2 -WS 2 The preparation method of the lateral heterojunction is carried out according to the following steps:

[0032] 400μm thick SiO is used in this experiment 2 / Si (where SiO 2 (300nm) as the growth substrate, firstly cut a 4-inch silicon wafer into a square substrate with a size of 1cm×1cm; secondly, ultrasonically clean the cut silicon wafer for 20 minutes in the order of acetone, alcohol, and deionized water. Set the power to 70W to clean the surface.

[0033] Preparation of molybdenum source precursor: Electrolyte configuration, use an electronic balance to weigh oxalic acid and sodium fluoride, respectively, 9.45g and 0.21g respectively, put them into a beaker and stir to dissolve, add deionized water to dissolve and pour into a volumetric flask, The fixed volume is 500ml; the molybdenum foil with a purity of 99.99% is cut into a size of 1x 1cm; the electrochemical oxidation is performed by using an electrochemical workstation...

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Abstract

The invention discloses a preparation method for a single-layer MoS2-WS2 transverse heterojunction, which belongs to the field of nano material growth. Electrochemical oxidation treatment is carried out on selected precursor sources to volatilize the precursor sources corresponding to molybdenum and tungsten at different temperatures, and the transverse heterojunction with the micron-sized clear interface is prepared in one step by a chemical vapor deposition method. According to the method of growing the transverse heterojunction, in a tubular furnace capable of accurately controlling the temperature, inert gas is used as transport gas of reaction sources (a molybdenum source, a tungsten source and a sulfur source), and different chemical vapor deposition reactions are controlled to occurto form the transverse heterojunction. The single-layer MoS2-WS2 transverse heterojunction prepared by the method has a micron-scale clear heterojunction boundary, and the transverse size can reach 100 microns or above. According to the method, the controllability of the growth process is high, a growth temperature window can be effectively widened, the growth temperature is reduced, and size andinterface controllable growth is achieved.

Description

technical field [0001] The invention belongs to the field of nanometer material growth, and relates to the preparation of a two-dimensional transition metal chalcogen compound heterojunction. [0002] technical background [0003] In 2004, Professor Geim and Professor Novoselov used the tape mechanical stripping method to prepare single-layer graphene, thus opening the door to the field of two-dimensional materials. Graphene is an ideal two-dimensional crystal composed of a single layer of carbon atoms, with an electron mobility μ of 2×10 5 cm 2 ·V -1 ·s -1 , thermal conductivity κ≈5000W / mK is higher than diamond and graphite, elastic modulus E=1.0TPa, strength σ int =130GPa, it has broad application prospects in the construction field of micro-nano devices in the future. However, graphene, as a zero-bandgap material, is greatly limited in practical applications. molybdenum sulfide (MoS 2 ) and tungsten sulfide (WS 2 ) represented by Transitional Metal Dichalcogenides...

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Application Information

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IPC IPC(8): H01L29/225H01L29/06H01L21/34
CPCH01L29/225H01L29/0684H01L21/34
Inventor 张永哲李毓佛陈永锋王佳蕊安博星马洋严辉
Owner BEIJING UNIV OF TECH
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