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au/tio 2 /p3ht heterojunction fiber and its preparation method and application

A heterojunction and fiber technology, applied in semiconductor/solid-state device manufacturing, organic semiconductor devices, electric solid-state devices, etc., to avoid high cost, short synthesis time, and improve the effect of wearable applications

Active Publication Date: 2022-06-21
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current application of Au modification methods is mainly focused on "planar" photodetectors, and the responsivity enhancement of "fibrous" photodetectors has not been reported.

Method used

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  • au/tio  <sub>2</sub> /p3ht heterojunction fiber and its preparation method and application
  • au/tio  <sub>2</sub> /p3ht heterojunction fiber and its preparation method and application
  • au/tio  <sub>2</sub> /p3ht heterojunction fiber and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0043] Example 1-1, TiO 2 Preparation of / P3HT heterojunction fiber samples

[0044] Take a Ti wire with a diameter of 0.2 mm and a length of 3 cm, ultrasonically clean it with acetone, ethanol and water for 15 minutes, dry it with nitrogen as the anode, and a platinum sheet of 1 cm × 2 cm as the cathode. In the electrolyte of ammonium chloride, 2% deionized water, and 98% ethylene glycol, react at 60V for 2 hours, then take out and clean with ethanol and blow dry with nitrogen; peel off the oxide film on the surface of the titanium wire with tape, and then remove the oxide film on the surface of the titanium wire with ethanol. After 15 minutes of ultrasonic cleaning, the titanium microwires were blown dry with nitrogen, and the titanium microwires were subjected to the same voltage reaction for 10 minutes in the above-mentioned electrolyte. After taking out, they were cleaned with ethanol and blown dry with nitrogen, and transferred to a tube furnace for calcination at 450 ° ...

Embodiment 1-2

[0047] The operation steps of Example 1-1 were repeated, the voltage was reduced to 55V, and the secondary anodization time was extended to 15 minutes, and a similar product could be obtained.

Embodiment 1-3

[0049] Repeat the operation steps of Example 1-1, increase the holding temperature to 500°C, and reduce the time to 0.5 hours, to obtain a similar product.

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Abstract

The invention provides a kind of Au / TiO 2 / P3HT heterojunction fiber and its preparation method, and its application in the preparation of photodetectors; the present invention uses titanium micron wires as a substrate, and prepares TiO by secondary anodizing-annealing-in a tube furnace-negative pressure impregnation 2 After / P3HT heterojunction fibers, the TiO 2 Au nanoparticles were deposited on the surface of / P3HT heterojunction fibers, and the size and distribution of Au nanoparticles were adjusted by controlling the deposition time to obtain Au / TiO 2 / P3HT heterojunction fiber; using the Au / TiO of the present invention 2 / P3HT heterojunction fibers can construct Au / TiO with excellent UV selectivity, ultra-high responsivity and high flexibility 2 / P3HT heterojunction fiber photodetector, using the plasmon resonance effect of Au, realizes the photoresponsivity improvement in the ultraviolet region up to 600-900%.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to an Au / TiO 2 / P3HT heterojunction fiber and preparation method thereof, and application in the construction of heterojunction fiber photodetector. Background technique [0002] Photodetectors are widely used in space communication, environmental monitoring, flame detection and other fields due to their ability to convert optical radiation signals into electronic signals (H.Chen, K.Liu, L.Hu, A.A.Al-Ghamdi, X. Fang, Mater. Today. 2015, 18, 493). Compared with traditional two-dimensional photodetectors, fiber-like flexible detectors have attracted more and more attention of researchers because they meet the requirements of lightweight, miniaturization, and flexible wearability of future portable electronic devices. In the original 5S evaluation index of photodetectors (M.Liao, L.Sang, T.Teraji, M.Imura, J.Alvarez, Y.Koide, Jpn.J.Appl.Phys.2012,51,09011...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K85/113H10K30/151H10K2102/101Y02E10/549
Inventor 郑灵霞郑华均邓晓雷王永智
Owner ZHEJIANG UNIV OF TECH