Seed crystal substrate with double-shell structure, and preparation method thereof

Abstract

The invention provides a seed crystal substrate applied to growth of a single-layer transfer film, and a preparation method thereof. The preparation method comprises the following steps: 1) forming aphotoresist mask on the surface of a monocrystalline silicon substrate by adopting a photoetching process; 2) depositing a metal layer on the substrate with the photoresist mask; 3) removing the photoresist mask; 4) carrying out selective etching on the substrate by adopting a wet etching process; 5) depositing a growth barrier layer comprising silicon nitride and silicon oxide on the surface of the substrate; and 6) removing the metal mask layer at the top end of the pyramid seed crystal array to obtain the seed crystal substrate. The obtained seed crystal substrate of the invention integrates mechanical stability and chemical stability, and has advantages of high reuse rate and long service life, and the preparation process is simple and convenient, and is suitable for automatic production.

Description

technical field [0001] The invention belongs to the field of semiconductor materials, in particular to a seed crystal substrate and a preparation method thereof. Background technique [0002] Nowadays, due to the excellent electrochemical properties and mature preparation process of semiconductor single crystal silicon, it has become the main raw material of semiconductor components. The methods for preparing single crystal silicon include Czochralski method, zone melting method and chemical vapor deposition method. Among them, chemical vapor deposition method has the advantages of high purity, good compactness, small residual stress and high crystallinity in the process of preparing single crystal silicon film. However, it has received widespread attention. The most widely used chemical vapor deposition method at this stage is the vapor phase epitaxy growth method, which is characterized by the reaction under normal pressure, simple operation and low cost. [0003] The mai...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a seed crystal substrate for layer transfer thin film growth and its preparation method, which is used to solve the problems of large raw material consumption and low reuse rate in the prior art. question

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