Nitrogen-doped graphene for in-situ growth of self-assembled denitration sulfur-resistant catalyst, and preparation method thereof

A technology of nitrogen-doped graphene and in-situ growth, applied in chemical instruments and methods, physical/chemical process catalysts, separation methods, etc., to achieve the effects of reducing agglomeration, reaction synthesis methods, simple operation, and firm combination

Active Publication Date: 2020-04-07
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Carrier-free MnO x -CeO 2 The catalyst has the highest low-temperature SCR activity in such reports so far, NO at 120°C x can be converted almost completely to N 2 , but there is no suitable technology to successfully grow it in situ on graphene

Method used

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  • Nitrogen-doped graphene for in-situ growth of self-assembled denitration sulfur-resistant catalyst, and preparation method thereof
  • Nitrogen-doped graphene for in-situ growth of self-assembled denitration sulfur-resistant catalyst, and preparation method thereof
  • Nitrogen-doped graphene for in-situ growth of self-assembled denitration sulfur-resistant catalyst, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Accurately weigh 0.1g of GO@TAP-CA, dissolve it in 50mL of DMF, add PVP after ultrasonication for 10min, and then add 0.2g of Ce(Ac) after ultrasonication for 10min 3 , put into a stirrer, stir at room temperature for 1 hour, until Ce(Ac) 3 Dissolve completely; then add 0.221g of SnCl 4 , continue to stir at room temperature for 1 hour, until the SnCl 4 Dissolve completely; then accurately weigh 0.099g KMnO 4 Dissolve it in 20mL of DMF, add it to the above solution, and continue to react at room temperature for 4h. After the reaction, transfer the reaction solution to a watch glass and dry it in an oven at 102°C. Add the dried product to 1M concentrated sulfuric acid dissolved in the solution, then transferred to a polytetrafluoroethylene liner, subjected to hydrothermal reaction at 160°C for 10 hours, and the obtained product was repeatedly centrifuged and washed until neutral, and then dried in an oven at 102°C; Calcined at 800°C for 2 hours in a high-temperature t...

Embodiment 2

[0040] Accurately weigh 0.1g of GO@TAP-CA, dissolve it in 50mL of DMF, add PVP after ultrasonication for 10min, and then add 0.3g of Ce(Ac) after ultrasonication for 10min 3 , put into a stirrer, stir at room temperature for 1 hour, until Ce(Ac) 3 Dissolve completely; then add 0.331g of SnCl 4 , continue to stir at room temperature for 1 hour, until the SnCl 4 Dissolve completely; then accurately weigh 0.149g KMnO 4 Dissolve it in 20mL of DMF, add it to the above solution, and continue to react at room temperature for 4h. After the reaction, transfer the reaction solution to a watch glass and dry it in an oven at 102°C. Add the dried product to 1M concentrated sulfuric acid dissolved in the solution, then transferred to a polytetrafluoroethylene liner, subjected to hydrothermal reaction at 160°C for 10 hours, and the obtained product was repeatedly centrifuged and washed until neutral, and then dried in an oven at 102°C; Calcined at 800°C for 2 hours in a high-temperature t...

Embodiment 3

[0043] Accurately weigh 0.1g of GO@TAP-CA, dissolve it in 50mL of DMF, add PVP after ultrasonication for 10min, and then add 0.4g of Ce(Ac) after ultrasonication for 10min 3 , put into a stirrer, stir at room temperature for 1 hour, until Ce(Ac) 3 Dissolve completely; then add 0.442g of SnCl 4 , continue to stir at room temperature for 1 hour, until the SnCl 4 Dissolve completely; then accurately weigh 0.198g KMnO 4 Dissolve it in 20mL of DMF, add it to the above solution, and continue to react at room temperature for 4h. After the reaction, transfer the reaction solution to a watch glass and dry it in an oven at 102°C. Add the dried product to 1M concentrated sulfuric acid dissolved in the solution, then transferred to a polytetrafluoroethylene liner, subjected to hydrothermal reaction at 160°C for 10 hours, and the obtained product was repeatedly centrifuged and washed until neutral, and then dried in an oven at 102°C; Calcined at 800°C for 2 hours in a high-temperature t...

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Abstract

The invention discloses nitrogen-doped graphene for in-situ growth of a self-assembled denitration sulfur-resistant catalyst, and a preparation method thereof. The preparation method comprises the following steps: taking graphene oxide as a precursor, preparing modified nitrogen-doped graphene from 2,4,6-triaminopyrimidine and cyanuric acid, and growing a ternary Mn-Ce-SnOx catalyst on the surfaceof the modified nitrogen-doped graphene as a catalyst carrier in situ. The self-assembled ternary Mn-Ce-SnOx catalyst is uniformly and firmly loaded on the surface of the modified nitrogen-doped graphene in a surface in-situ growth manner, so that the obtained composite material has good sulfur resistance while having efficient denitration capability.

Description

technical field [0001] The invention belongs to the technical field of graphene composite catalytic materials, in particular to a surface in-situ growth self-assembled ternary denitrification and anti-sulfur catalyst Mn-Ce-SnO x N-doped graphene and its preparation method. Background technique [0002] With the rapid development of China's industrialization process, many inevitable pollutions have been produced, among which air pollution is the most serious and the most concerned issue among the many pollutions. The generation of air pollution has caused a relatively bad impact on people's life, health, work and nature. At present, the main source of air pollution is the pollutants produced by coal combustion, including PM2.5, PM10, sulfur dioxide, nitrogen oxides and nitrogen dioxide, etc. These gases will cause haze, acid rain, photochemical smog and greenhouse effect hazards . [0003] As we all know, due to the large amount of electricity demand brought about by my co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01D53/86B01D53/56B01J35/10
CPCB01D53/8628B01D2251/2062B01J27/24B01J35/1014B01J35/1019B01J35/1038B01J35/1061
Inventor 郑玉婴郑伟杰
Owner FUZHOU UNIV
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