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Photoresist and application thereof

A technology of photoresist and photoacid generator, applied in the field of photolithography, can solve the problems of small two-photon absorption cross-section, low resolution and sensitivity, and achieve improved photosensitivity, low exposure threshold, and large two-photon absorption section effect

Inactive Publication Date: 2020-04-24
CHANGZHOU TRONLY ADVANCED ELECTRONICS MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a photoresist to solve the problems of small two-photon absorption cross-section, low resolution and low sensitivity of the existing photoresist in the near-infrared region

Method used

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  • Photoresist and application thereof
  • Photoresist and application thereof
  • Photoresist and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0071] Preparation of phenolic resin:

[0072] According to the ratio shown in Table 1, m-cresol (99wt%), p-cresol (99wt%), 3,5-xylenol (99wt%), and dihydrate oxalic acid were added with a thermometer, reflux control distillation head, In the reaction kettle with heating mantle and nitrogen protection, 20 wt% of the formalin solution (36.9 wt%) of the amount shown in Table 1 was first added, and heated to 60° C. under the condition of nitrogen, at which time the exothermic reaction began. When the reaction temperature was raised to about 100°C, the remaining formalin solution was gradually added within 30 minutes, and then continued to react at reflux temperature for 4 hours to generate polycondensate. Under the protection of atmospheric nitrogen, the volatile components such as formaldehyde and water were distilled off. When the temperature of the polycondensate was raised to 210°C, the unreacted monomer was removed by vacuum distillation under reduced pressure until the tem...

Embodiment 1

[0083] A positive photoresist, comprising the following components: acrylic resin 1: 30g, photoacid generator PAG 1: 2g, auxiliary agent - dissolution inhibitor: 5g, auxiliary agent - carbon black: 2g, solvent - - Diethylene glycol dimethyl ether: 60 g.

[0084] Under light-shielding conditions, dissolve the carbon black of 2g of photoacid generator PAG1, 5g of dissolution inhibitor and 2g of diethylene glycol dimethyl ether in 60g of diethylene glycol dimethyl ether, after the dissolution is complete, add 30g of acrylic resin 1, avoid Stir for 5 hours under light conditions until the mixture is evenly stirred, and a positive photoresist 1 is prepared. Coating the prepared photoresist composition on the substrate, the thickness of the layer is about 25 μm, exposing the coated substrate to actinic radiation of active energy lines such as ultraviolet rays or excimer lasers, and the exposure time is 30s, Then put the exposed substrate into an oven, bake at 150°C for 30 minutes, ...

Embodiment 2～9 and comparative example 1

[0086]Referring to the above-mentioned Example 1, photoresists 2-9 and comparative photoresist 1 were respectively prepared according to the formulations shown in Table 4 below. Unless otherwise specified, the parts stated in the following table are all parts by mass.

[0087] Table 4 Positive photoresist formula table

[0088]

[0089]

[0090] In Table 4, the dissolution inhibitor is: t-BOC protected phenol. Among the photoacid generators, PAG1-4 and Easepi 6976 have the following structural formulas respectively:

[0091] PAG1:

[0092] PAG2:

[0093] PAG3:

[0094] PAG4:

[0095] Easepi 6976: a mixture of triarylsulfonium salt dimers and monomers (purchased from Shanghai Guangyi Chemical Co., Ltd.):

[0096]

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Abstract

The invention provides a photoresist and an application thereof. The photoresist comprises resin, a photoacid generator, an additive and a solvent, wherein the photoacid generator is sulfonium salt containing a conjugated structure. According to the photoresist disclosed by the invention, the problems of small two-photon absorption cross section and low resolution and sensitivity of the existing photoresist are solved.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a photoresist and its application. Background technique [0002] With the research and development of high-integration, ultra-high-speed, and ultra-high-frequency integrated circuits and devices, the feature size of large-scale integrated circuits and ultra-large-scale integrated circuits is becoming smaller and smaller, and the processing size enters deep submicron, hundreds of nanometers or even nanometers. In the field of microelectronics technology, micro-lithography technology is the highest precision processing technology that humans can achieve so far. However, the further development of integrated circuits requires the support of corresponding exposure technology. Photoresist technology is an important part of exposure technology. A high-performance exposure tool needs a matching high-performance photoresist to truly obtain high-resolution processing capabilities...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/00
CPCG03F7/00G03F7/004
Inventor 钱晓春胡春青马丽君
Owner CHANGZHOU TRONLY ADVANCED ELECTRONICS MATERIALS CO LTD
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