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BCB thickness on-chip monitoring and control method and device

A control method and substrate technology, which are applied to measurement devices, optical devices, phase-influenced characteristic measurement, etc., can solve the problems of measurement accuracy error, sample destructiveness, slow measurement speed, etc. Destructive and complex, easy-to-process effects

Pending Publication Date: 2020-04-24
CETC GUOJI SOUTHERN GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The conventional step test method for monitoring the thickness of the BCB layer requires the construction of a specific BCB step, which has the disadvantages of complex structure, destructive to the sample, slow measurement speed, and measurement accuracy affected by residual layer and step meter errors.

Method used

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  • BCB thickness on-chip monitoring and control method and device
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  • BCB thickness on-chip monitoring and control method and device

Examples

Experimental program
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Effect test

Embodiment 1

[0051] A method for on-chip monitoring and control of BCB thickness in an InP-HBT process, the steps comprising:

[0052] (1) Clean and dry the substrate, spin-coat photoresist on the surface, the adhesive layer has high resolution and is easy to peel off; the photoresist layer is selected from AZ1500 or AZ5214, and the thickness of the adhesive layer is 1um-8um;

[0053] (2) Expose and develop on the subbing layer with deep ultraviolet lithography, and transfer the monitoring pattern on the layout to the subbing layer; the designed monitoring pattern is circular or square, with a diameter or side length of 10um-100um.

[0054] (3) Prepare the metal thin film of monitoring pattern with evaporation stripping process, prepare the epitaxial film of monitoring pattern with dry etching process, prepare the dielectric film of monitoring pattern with vapor deposition process;

[0055] The metal film layer is selected from Ti or Au with a thickness of 10nm-800nm, the epitaxial film la...

Embodiment 2

[0062] like Figure 1-8 As shown, a method for on-chip monitoring and control of BCB thickness in an InP-HBT process, the steps include:

[0063] 1) Select the InP HBT epitaxial substrate 1, wash it with acetone, isopropanol and deionized water, dry it with high-purity nitrogen in a clean room, and spin-coat a 4um thick photoresist 2 on the surface of the substrate, such as figure 1 as shown,

[0064] 2) Use deep ultraviolet lithography technology to expose and develop, and transfer the monitoring pattern on the photoresist plate to the photoresist layer, such as figure 2 shown;

[0065] 3) Utilize the electron beam evaporation process to evaporate a metal Ti layer 3 with a thickness of about 10 nm on the surface of the photoresist, such as image 3 shown;

[0066] 4) Utilize acetone to soak the substrate, peel off the metal layer, and transfer the monitoring pattern to the metal Ti layer 3, such as Figure 4 shown;

[0067] 5) Spin 2um thick BCB glue onto the surface o...

Embodiment 3

[0072] This embodiment step is compared with embodiment 2, and its difference is that the film material of selection is Si 3 N 4 Medium, the specific method is:

[0073] 1) Select an InP HBT epitaxial substrate, wash it with acetone, isopropanol and deionized water, dry it with high-purity nitrogen in a clean room, and grow 100nm Si on the surface of the substrate 3 N 4 medium;

[0074] 2) Spin-coat the photoresist layer, and transfer the monitoring pattern to the photoresist layer by exposure and development;

[0075] 3) Using a dry etching process, the monitoring pattern is transferred from the photoresist layer to the Si 3 N 4 medium layer;

[0076] 4) Spin-coat 2um thick BCB glue on the surface of the substrate, heat it to 250°C in a nitrogen-filled oven for 2 hours, then cool it to room temperature and take it out;

[0077] 5) Find the monitoring pattern on the wafer under the field of view of the objective lens of the film thickness meter, align the center of the ...

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Abstract

The invention discloses a BCB thickness on-chip monitoring and control method and device. The method comprises the following steps: preparing a monitoring graph on an epitaxial wafer; spin-coating thesurface of a substrate with BCB glue and heating the BCB glue for curing; testing the thickness of the BCB layer by adopting a micro-area reflection interference method; and etching the BCB layer byadopting a dry etching process, and repeatedly testing the BCB thickness of the monitoring area. According to the monitoring method, the BCB thicknesses of different areas on the wafer can be rapidlyobtained, and the surface of the wafer cannot be damaged. The method can be used for a BCB planarization process of an InP HBT device, on-chip real-time monitoring of the BCB thickness can be achieved, and the production efficiency is effectively improved. Process control monitoring is carried out by setting a specific monitoring graph, real-time monitoring of the BCB thicknesses of different areas is achieved, and the process control capacity is effectively improved.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit devices and techniques, and in particular relates to an on-chip monitoring and control method and device for BCB thickness. Background technique [0002] The electronics industry based on semiconductor devices is the largest industry in the world. At present, the size of semiconductor devices has entered the nanometer level. In order to reduce the volume and weight of electronic systems and improve reliability, the integration of circuits is getting higher and higher, the layout is becoming more and more complex, and the number of layers of interconnection wiring is also increasing. . [0003] A monolithic microwave integrated circuit (MMIC) is a microwave circuit in which active and passive components are fabricated on a semiconductor substrate. Although MMIC is less complex than other integrated circuits in appearance, it can generate the highest operating frequency and is widel...

Claims

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Application Information

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IPC IPC(8): H01L21/66G01B11/06G01N21/21G01N21/41
CPCH01L22/12H01L22/20G01N21/211G01N21/41G01B11/0675
Inventor 戴姜平任春江戴鹏飞李征常龙姚靖懿
Owner CETC GUOJI SOUTHERN GRP CO LTD
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