Plate type PECVD system integrated with anti-PID device and passivation film-coating method

Abstract

The invention relates to a plate type PECVD system integrated with an anti-PID device and a passivation film-coating method, and belongs to the technical field of solar cell manufacturing. The problems that the passivation film-coating time is long and the temperature difference between a passivation bin and a PECVD process bin is large in an existing process, and debris is prone to being producedare solved. The plate type PECVD system integrated with the anti-PID device includes a feed bin, the anti-PID device, a PECVD process bin and a discharge bin; the anti-PID device includes a gas bottle, an induction device and a passivation bin; and the induction device can induce O2 to produce O3 at a normal temperature. The passivation film-coating method includes the steps that materials are preheated for the first time, and the materials enter the passivation bin; oxygen is introduced, the induction device is started, and a passivation film is formed on the surface of the materials; the materials is preheated for the second time in a heating area; and the materials pass through a film-forming process area and a cooling area. According to the plate type PECVD system integrated with theanti-PID device and the passivation film-coating method, the SiO2 passivation film is formed at the normal temperature.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a plate-type PECVD system integrating an anti-PID device and a passivation coating method. Background technique [0002] At present, the anti-PID technology on the battery side is mainly concentrated on the silicon dioxide / silicon nitride stacking technology. The anti-PID performance of this composite film has been highly recognized by the industry. In the preparation of the silicon dioxide / silicon nitride stack, the silicon dioxide layer is the key point, which directly affects the anti-PID performance of the module, the appearance of the battery and the conversion efficiency. [0003] There are three ways to prepare the silicon dioxide layer: one is to use PECVD technology, for N 2 O / SiH 4 The silicon dioxide layer is deposited by ionization, but the density of the silicon dioxide layer in this technology is poor, which will seriously damage the graphite boat...

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Problems solved by technology

[0003] There are three ways to prepare the silicon dioxide layer: one is to use PECVD technology, for N 2 O / SiH 4 The silicon dioxide layer is deposited by ionization, but the density of the silicon dioxide layer in this technology is poor, which will seriously damage the graphite boat and the furnace tube, and will also reduce the conversion efficiency of the battery; the second is to add an ozone oxidation device to the PSG removal equipment , to oxidize the surface of the silicon wafer to form a silicon dioxide layer. This technology is low in cost and simple in process; the third is to deposit silicon dioxide by thermal oxygen method. The effect of thermal oxygen deposition of silicon dioxide film is better, but generally requires Under high temperature (600°C-1100°C) for 30min-60min, such long-term high-temperature treatment will cause problems such as reduction of minority carrier life, redistribution of phosphorus, diffusion of metal impurities, etc., which will affect the conversion of solar cells efficiency

At the same time, the current market requires cells to have anti-PID performance. Now the common practice is to use a separate anti-PID machine to deposit an oxide layer after etching. A separate anti-PID device will not only increase the cost of battery manufacturing, but also It will also reduce the production efficiency of cells, and the independent anti-PID equipment completes the passivation chamber (SiO 2 ) after deposition, it is difficult to avoid contact with air again, and contact with air again, it is easy to absorb moisture in the air and reduce the quality of the film

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