The invention relates to an
etching method and
etching gas for an inner-side wall, and a preparation method for a
nanowire device, belonging to the technical field of semiconductors. The invention solves the problem of incapability of simultaneously realizing reservation of a side-
wall material in a groove and high selection ratio of materials like
silicon and a top-part
hard mask in the prior art. The gas used for
etching the inner-side wall of the
nanowire device comprises CH2F2, CH4, O2 and Ar, wherein the ratio of the CH2F2 to the CH4 to the O2 to the Ar is 1: 1: 1: 2 to 1: 1: 1: 5; in theetching process, an upper
radio frequency power is in a range of 100-1000 W, and a lower
radio frequency power is in a range of 10-80 W; the power of a lower
electrode is 0-60 W; and the temperatureof a base is minus 20 DEG C to 90 DEG C. The preparation method for the
nanowire device comprises the following steps: extending a lamination layer and a
hard mask on a substrate; transversely etchingan SiGe layer so as to form a filling gap with a preset length; depositing an inner-side
wall material; and carrying out etching to remove the inner-side
wall material outside the filling gap so as to form the inner-side wall. According to the invention, the side-wall material in the groove can be reserved, and high selection ratio of materials like the
silicon and the top-part
hard mask can be achieved.