Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

46results about How to "Multiple preferred combinations" patented technology

Polyimide adhesive film with excellent comprehensive performance as well as preparation method and application thereof

The invention relates to a polyimide adhesive film with excellent comprehensive performance as well as a preparation method and application thereof, belongs to the technical field of polyimide, and solves the problem that an existing polyimide adhesive film can hardly have excellent heat resistance, good adhesive property, low dielectric constant at high frequency and low dielectric loss. The polyimide adhesive film is mainly prepared from aromatic dianhydride, aromatic diamine containing a diphenyl ether structure and diamine containing a siloxane structure. The polyimide adhesive film has excellent heat resistance, high-frequency low dielectric property and good adhesive property. The glass-transition temperature is higher than 330 DEG C, the dielectric constant (Dk) at 10 GHz is smaller than 3, the dielectric loss (Df) value is 0.003-0.006, and the peel strength after the polyimide adhesive film is in hot-pressing adhesive connection with a copper foil is larger than 10 N/cm. The application requirements of flexible printed circuit board manufacturing and interlayer bonding and insulation in multi-layer circuit board lamination wiring processing can be met. The polyimide adhesive film provided by the invention can be widely applied to the fields of high-frequency flexible printed circuit boards, high-frequency film antennas and the like.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Sensitizer for radiotherapy and preparation method and application of sensitizer

The invention relates to a sensitizer for radiotherapy and a preparation method and application of the sensitizer, belongs to the field of nano material chemistry and biochemistry, and solves the problems that the existing radiotherapy sensitizer cannot improve the hypoxic state in a tumor microenvironment, is insensitive to radiotherapy, large in dosage of a radiation agent and large in damage tonormal tissues. The molecular formula of the sensitizer for radiotherapy is BiO2-x, the molecular structure has oxygen vacancy, and the preparation raw material of the sensitizer comprises hydroxideof alkali metal and bismuthate. The preparation method of the sensitizer comprises the following steps: dissolving the hydroxide of alkali metal and the bismuthate, and stirring to obtain a solution;transferring the solution into a reaction container, heating, and reacting for a period of time; the BiO2-x provided by the invention can be used as the sensitizer to be applied to radiotherapy sensitization of tumors, and has a very good inhibition effect on tumors under a relatively low radiation dose.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

Method for improving layout photoetching performance, corrected layout and simulation method

PendingCN110989289ADOF improvementImprove photolithography qualityPhotomechanical exposure apparatusMicrolithography exposure apparatusLayoutEngineering
The invention relates to a method for improving A layout photoetching performance, a corrected layout and a simulation method, and belongs to the technical field of semiconductor photoetching, and solves the problems that the process window of the whole layout is reduced and the photoetching quality is obviously reduced because the mutual restriction of a prohibition periodic effect and a dense periodic line cannot be effectively inhibited and the traditional OPC is difficult to balance and solve in the prior art. The method for improving the photoetching performance comprises the following steps of: obtaining a most representative graph in a graph category with remarkable influence on the photoetching performance through simulation; increasing the width of a forbidden period side edge single line; fixing the position of the middle line of a dense periodic line, and keeping the size of the middle line unchanged; and outwards widening the outer side edge edge3 of the side edge line of the dense periodic line by a certain distance delta edge3 to obtain an adjusted and corrected graph. According to the invention, the photoetching performance of the layout is improved with low cost andlow risk.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Thermoplastic polyimide with excellent comprehensive performance and preparation method and application thereof

The invention relates to thermoplastic polyimide with excellent comprehensive performance and a preparation method and application thereof, belongs to the technical field of polyimide, and solves the problem that good melting manufacturability and high heat resistance of existing thermoplastic polyimide are difficult to achieve at the same time. The thermoplastic polyimide is prepared from the following raw materials: fluorine-containing aromatic dianhydride, m-phenylenediamine, rigid aromatic diamine with a large-volume structure and a non-reactive end-capping reagent. The preparation method comprises the following steps: preparing a polyamide acid solution, preparing a polyimide solution, preparing a polyimide suspension, and carrying out post-treatment to obtain the polyimide powder. The thermoplastic polyimide resin disclosed by the invention can be used as a high-temperature-resistant engineering plastic, composite material matrix resin or a composite material interlayer toughening component, and is applied to the fields of aerospace, automobile manufacturing, power and electric appliances, microelectronics and the like.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Combined battery string and manufacturing method thereof, and manufacturing method of battery assembly

The invention relates to a combined battery string and a manufacturing method thereof, and a manufacturing method of a battery assembly, belongs to the technical field of solar batteries, and solves problems that in the prior art, in order to connect bypass diodes in parallel, a use amount of back silver paste needs to be increased, a battery design needs to be changed, and manual welding is needed so that production efficiency is low. The combined battery string comprises a plurality of battery pieces and a plurality of conductive connecting devices, and the plurality of conductive connectingdevices are located at two ends and in the middle of the combined battery string. The manufacturing method of the combined battery string comprises the following steps: manufacturing the conductive connecting devices and small battery fragments; applying a conductive adhesive to upper surfaces of the conductive connecting devices through CCD photographing and positioning; placing the small battery fragments on the conductive connecting devices; continuously placing the small battery fragments and connecting the small battery fragments in series to a certain number; stacking the conductive connecting devices; repeating the steps till that the small battery fragments reach the required number; and grabbing the conductive connecting devices to obtain the combined battery string. In the invention, low-cost and high-efficiency parallel connection of the bypass diodes is realized.
Owner:晶澳(扬州)新能源有限公司

Sensitizer for radiotherapy and application thereof

The invention relates to a sensitizer for radiotherapy and application thereof, belongs to the field of nanomaterial chemistry and biochemistry, and solves the problems that an existing radiotherapy sensitizer cannot improve the hypoxic state in a tumor microenvironment, radiotherapy is insensitive, the dosage of a radioactive agent is large, and damage to normal tissues is large. The sensitizer for radiotherapy comprises BiO2-x nanosheets, the molecular structure has oxygen deficiency, and the sensitizer is prepared from the following raw materials: hydroxide of alkali metal and bismuthate; and x ranges from 0.15 to 0.6. The preparation method comprises the following steps: dissolving hydroxide of alkali metal and bismuthate, and stirring to obtain a solution; transferring the solution into a reaction container, heating, and reacting for a period of time; and cooling to room temperature, washing with deionized water, and drying at 60-100 DEG C for 2-8 hours to obtain BiO2-x. The BiO2-x disclosed by the invention can be used as a sensitizer to be applied to radiotherapy sensitization of tumors, and a very good inhibition effect on the tumors under a relatively low radiation dose is realized.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

Stress resonance fatigue test method and test system for lightweight high-strength composite material

The invention relates to a stress resonance fatigue test method and a test system for a lightweight high-strength composite material. The invention belongs to the technical field of composite materialresonance fatigue tests. The problems that in the prior art, fatigue damage caused by response of static response analysis to the structure under dynamic excitation is difficult to obtain a more accurate conclusion, and no resonance fatigue test method and test system for the light-weight high-strength composite material and the structure exist are solved. The test method comprises the followingsteps: applying a counterweight, and adjusting the resonant frequency; setting a random vibration frequency range and parameters needing to be recorded; and setting an acceleration root-mean-square value, carrying out a test in a mode of gradually increasing the vibration stress level, and fitting a fatigue life curve. The test system comprises a vibration test bench, a data acquisition and display recording system, a resonance fatigue test control system and an induction part. The method has important guiding significance for further expanding to C/SiC and other composite material structure resonance fatigue tests.
Owner:BEIJING RES INST OF MECHANICAL & ELECTRICAL TECH

Carbon nanoparticles for scavenging free radicals as well as preparation method and application thereof

The invention relates to carbon nanoparticles for scavenging free radicals as well as a preparation method and application of the carbon nanoparticles, belongs to the technical field of nano materials, free radical scavenging and radiation protection, and can solve the problems that an existing drug for radiotherapy protection is fast in degradation in vivo, short in drug effect time, incapable ofwell targeting gastrointestinal tracts and large in toxic and side effects. The carbon nanoparticle for scavenging free radicals has a graphene-like structure and contains hydrophilic groups such ascarboxyl and hydroxyl; the hydration particle size of the carbon nanoparticles is 15-25 nm. The preparation method of the carbon nanoparticles comprises the following steps: adding an oxidant into a carbon raw material for oxidation; refluxing for 5 to 24 hours at 85 to 95 DEG C; cooling to room temperature, centrifuging, discarding a precipitate, and reserving a supernatant; and centrifuging thesupernatant, and washing an obtained precipitate product to obtain the carbon nanoparticles. According to the invention, safe and efficient radiotherapy protection on gastrointestinal tracts is realized.
Owner:THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

Etching method and etching gas for inner-side wall, and preparation method for nanowire device

The invention relates to an etching method and etching gas for an inner-side wall, and a preparation method for a nanowire device, belonging to the technical field of semiconductors. The invention solves the problem of incapability of simultaneously realizing reservation of a side-wall material in a groove and high selection ratio of materials like silicon and a top-part hard mask in the prior art. The gas used for etching the inner-side wall of the nanowire device comprises CH2F2, CH4, O2 and Ar, wherein the ratio of the CH2F2 to the CH4 to the O2 to the Ar is 1: 1: 1: 2 to 1: 1: 1: 5; in theetching process, an upper radio frequency power is in a range of 100-1000 W, and a lower radio frequency power is in a range of 10-80 W; the power of a lower electrode is 0-60 W; and the temperatureof a base is minus 20 DEG C to 90 DEG C. The preparation method for the nanowire device comprises the following steps: extending a lamination layer and a hard mask on a substrate; transversely etchingan SiGe layer so as to form a filling gap with a preset length; depositing an inner-side wall material; and carrying out etching to remove the inner-side wall material outside the filling gap so as to form the inner-side wall. According to the invention, the side-wall material in the groove can be reserved, and high selection ratio of materials like the silicon and the top-part hard mask can be achieved.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Method for determining prohibition period of photoetching process node and simulation method

The invention relates to a method for determining a prohibition period of a photoetching process node and a simulation method, belongs to the technical field of semiconductor photoetching, and solvesthe problems that the found prohibition period is inaccurate, layout design rules cannot be effectively guided to be formulated, and reasons of poor photoetching quality of individual graphs cannot bejudged in a photoetching stage. The method for determining the prohibition period of the photoetching process node comprises the following steps: acquiring a test pattern; setting a first light source and simulation parameters, and performing simulation by utilizing software; analyzing a simulation result, drawing a first curve, and finding out a period range (first period range) which is obviously lower than other values in the first curve; setting a second light source and light source parameters, and drawing a second curve; finding out a period range (second period range) which is obviously lower than other values in the second curve, and combining the second period range and the first period range to jointly determine a forbidden period range. According to the invention, the prohibition period under a technical node is simply, efficiently and accurately determined.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Wafer processing device and method

The invention relates to a wafer processing device and method, belongs to the technical field of semiconductor manufacturing, and solves the problems that in the prior art, cleaning is carried out after all wafer processes are completed, smoke generated in the semiconductor manufacturing process cannot be completely removed, and the wafer yield is lost. The wafer processing device comprises a process chamber, a transfer chamber and a cleaning system. The cleaning system is arranged in the wafer processing device, so that the wafer passing through the process chamber can directly enter the cleaning system to be cleaned. A transfer mechanical arm is arranged in the transfer chamber, and the transfer mechanical arm completes the transfer of the wafer between the process chamber and the transfer chamber and between the transfer chamber and the cleaning system. The wafer processing method comprises the steps that after each process capable of generating smoke is carried out, the wafer is conveyed into the cleaning system to be cleaned and dried. According to the invention, the flue gas is effectively removed, and the yield loss caused by the flue gas is improved.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1

Folding control surface assembling method

The invention relates to a folding control surface assembling method, belongs to the technical field of control surface assembling, and solves the problems that in the existing control surface assembling process, the pre-tightening force of a torsion spring is difficult to control and align, the positioning and clamping requirements of front and rear sections of a control surface are high, and the accessibility of manual operation in a narrow space is poor. The folding control surface assembling method comprises the steps that the front section of the control surface is positioned and clamped through a first positioning and clamping structure; a second positioning and clamping structure is adopted for positioning and clamping the rear section of the control surface; a torsion spring positioning piece is inserted into a mounting hole close to the front section of the control surface; a hand wheel lead screw is rotated, so that the control surface rear-section screw hole is aligned with a control surface front-section screw hole; and screws are installed, and installation of the control surface front section and the control surface rear section is completed. A folding control surface assembling tool comprises the first positioning and clamping structure, the second positioning and clamping structure, a torsion spring alignment structure and a directional driving mechanism. Positioning, clamping, relative movement and reliable locking of the front section and the rear section of the control surface are achieved.
Owner:BEIJING HANGXING MACHINERY MFG CO LTD

Plate type PECVD system integrated with anti-PID device and passivation film-coating method

The invention relates to a plate type PECVD system integrated with an anti-PID device and a passivation film-coating method, and belongs to the technical field of solar cell manufacturing. The problems that the passivation film-coating time is long and the temperature difference between a passivation bin and a PECVD process bin is large in an existing process, and debris is prone to being producedare solved. The plate type PECVD system integrated with the anti-PID device includes a feed bin, the anti-PID device, a PECVD process bin and a discharge bin; the anti-PID device includes a gas bottle, an induction device and a passivation bin; and the induction device can induce O2 to produce O3 at a normal temperature. The passivation film-coating method includes the steps that materials are preheated for the first time, and the materials enter the passivation bin; oxygen is introduced, the induction device is started, and a passivation film is formed on the surface of the materials; the materials is preheated for the second time in a heating area; and the materials pass through a film-forming process area and a cooling area. According to the plate type PECVD system integrated with theanti-PID device and the passivation film-coating method, the SiO2 passivation film is formed at the normal temperature.
Owner:JA SOLAR TECH YANGZHOU

A polyimide adhesive film with excellent comprehensive properties and its preparation method and application

The invention relates to a polyimide film with excellent comprehensive performance and its preparation method and application, which belongs to the technical field of polyimide and solves the problem of the excellent heat resistance and good adhesion of the existing polyimide film. Performance, low dielectric constant at high frequency and low dielectric loss are difficult to be compatible. The polyimide film is prepared from aromatic dianhydride, aromatic diamine containing diphenyl ether structure and diamine containing siloxane structure. The polyimide adhesive film has excellent heat resistance, high-frequency low-dielectric performance and good adhesion performance, the glass transition temperature is greater than 330 ° C, the dielectric constant at 10 GHz is less than 3, and the dielectric loss value is 0.003 Between ‑0.006, the peel strength after thermocompression bonding with copper foil is greater than 10N / cm, which can meet the application requirements of interlayer bonding and insulation in the manufacture of flexible printed circuit boards and multilayer circuit board laminated wiring processing, and can be widely used It is used in high-frequency flexible printed circuit boards, high-frequency film antennas and other fields.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Double-lateral extension forming device and forming method for irregular curved surface part

The invention relates to a double-lateral extension forming device and forming method for an irregular curved surface part, belongs to the technical field of sheet metal machining, and solves the problems that in the prior art, an irregular complex-surface thin-wall component cannot be formed at a time, the requirement for welding is high, the machining cost of the part is high, the production period is long, and die releasing is difficult. The extension forming device comprises an upper die, a lower die and a pressing forming assembly, wherein the upper die extends and forms a to-be-formed process workpiece in a lower die cavity through the pressing forming assembly; the pressing forming assembly comprises a molded surface pressing block, a protrusion pressing male die and a plurality of first elastic components, wherein the protrusion pressing male die is assembled in a through hole of the molded surface pressing block and is fixed to the molded surface pressing block, the outer molded surface of the protrusion pressing male die is matched with the molded surface of the through hole of the molded surface pressing block, one end of each first elastic component is fixed to the molded surface pressing block, and the other end of each first elastic component is fixed to the protrusion pressing male die. By means of the device and method, double-lateral extension forming of the irregular curved surface part is achieved at one time.
Owner:BEIJING HANGXING MACHINERY MFG CO LTD

Method for removing metal ions in electrode material and supercapacitor

The invention relates to a method for removing metal ions in an electrode material and a supercapacitor. The invention belongs to the technical field of new energy materials, and solves the problem that the existing process of removing metal ions requires repeated treatment of the material, which generates a large amount of acid-containing wastewater and which causes great environmental protectiontreatment pressure, and the problem of the technical requirement that the concentration sum of the metal ions in a super-capacitor electrode carbon material is smaller than 200 ppm cannot be met dueto the fact that the concentration sum of the metal ions in the electrode material treated through the existing technology is too high. The method for removing the metal ions in the electrode materialcomprises the following steps: 1, preparing water carbon slurry; 2, carrying out surface oxidation treatment on the raw material carbon in the water carbon slurry by adopting an ozone contact oxidation method; and 3, carrying out heating treatment on the water-carbon slurry subjected to ozone contact treatment. By means of ozone contact oxidation and heating treatment, the sum of the content of various metal ions is removed to the level smaller than 60 ppm.
Owner:INST OF CHEM CHINESE ACAD OF SCI

Tungsten composite film layer and growth method thereof, and monolithic 3DIC

The invention relates to a tungsten composite film layer and a growth method thereof, and a monolithic 3DIC, belongs to the technical field of semiconductor manufacturing, and solves the problem of wrinkling of a monocrystalline silicon layer caused by a large stress of tungsten grown by an existing method. The tungsten composite film layer is located on a semiconductor substrate and comprises a first film layer close to the side of the semiconductor substrate and a second film layer away from the side of the semiconductor substrate; the stress directions of the first film layer and the second film layer are opposite; the stress of the first film layer is a compressive stress, and the stress of the second film layer is a tensile stress; and the first film layer includes a plurality of film layers. The growth method of the tungsten composite film layer comprises the following steps: growing the first film layer on the semiconductor substrate; and growing the second film layer with the stress direction opposite to that of the first film layer on the first film layer. According to the invention, the low stress of the tungsten composite film layer is realized.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI

Coaxiality and symmetry degree detection device and detection method

The invention relates to a coaxiality and symmetry degree detection device and detection method, belongs to the technical field of coaxiality and symmetry degree detection, and solves the problem thatno device for detecting the coaxiality and symmetry degree of a folding rudder stepped hole exists in the prior art. The coaxiality and symmetry degree detection device comprises a positioning frameand a positioning shaft, wherein the positioning frame is a cylinder and comprises a matching section and a first detection section, and the first detection section is inserted into a first hole of the coaxiality to be detected; and the positioning shaft is a hollow cylinder and comprises a second detection section and an internal cavity corresponding to the second detection section, the second detection section is inserted into a second hole with the coaxiality to be detected, and the matching section is inserted into the internal cavity. According to the coaxiality and symmetry degree detection device and the detection method, high-precision detection of the coaxiality and the symmetry degree of the folding rudder stepped hole is realized.
Owner:BEIJING HANGXING MACHINERY MFG CO LTD

Forming die and forming method for special-shaped curved surface structural parts

The invention relates to a forming mold and a forming method for a special-shaped curved surface structural part, which belongs to precision sheet metal processing, and solves the problems in the prior art that it is impossible to form products with non-uniform wall thickness special-shaped curved surfaces at one time, the surface quality of the product is poor, and the processing efficiency is low. . The forming mold includes an upper mold and a lower mold; the upper surface of the lower mold is provided with an opening, and the blank is in contact with the lower surface of the upper mold, and enters the cavity of the lower mold through the opening; the side of the upper mold is provided with steps, and the steps are connected with blanks of different thicknesses. Corresponding to the non-flat surface of . The forming method includes making a blank; welding the blank; placing the welded blank on a forming mold, and the welding seam corresponds to the steps of the upper mold; lowering the upper mold and the jacking cylinder to complete the one-time forming of the non-uniform wall thickness special-shaped curved surface structure. The invention realizes the one-time forming of the non-uniform wall-thickness special-shaped curved surface structural parts.
Owner:BEIJING HANGXING MACHINERY MFG CO LTD

Preparation method of carbon sol for electrode material, capacitive energy storage device and application

The invention relates to a preparation method of carbon sol for an electrode material, a capacitive energy storage device and application, belongs to the technical field of energy storage device materials, and solves the problem of poor comprehensive performance of a carbon material due to the fact that an existing preparation method cannot balance relatively high conductivity, high specific surface area, controllable pore structure, relatively high stability, processability, composite compatibility, relatively high purity and relatively low cost. The preparation method of the carbon sol for the electrode material comprises the following steps: adding a catalyst into dispersion medium diphenyl ether / polyethylene glycol 400, and heating; adding a thermosetting resin reaction solution into the dispersion medium, carrying out suspension polymerization reaction to generate a carbon sol precursor material, and separating to obtain the carbon sol precursor material; and carrying out activation processing on the carbon sol precursor material to obtain the carbon sol. By changing the existence form of the carbon material for the electrode material, the specific surface area is greatly increased, and the capacity of the capacitive energy storage device is increased.
Owner:INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products