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Two-component silicon wafer cleaning solution

A silicon wafer cleaning, two-component technology, applied in the directions of detergent compounding agent, detergent composition, organic cleaning composition, etc., can solve the problems of mottle, silicon wafer damage, poor cleaning effect, etc., and achieve decontamination ability. Strong, improve the yield, ensure the effect of cleanliness

Pending Publication Date: 2020-06-16
CHANGZHOU GREATOP NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional sodium hydroxide, potassium hydroxide silicon wafer cleaning solution is easy to produce white spots and mottling after cleaning the silicon wafer. After cleaning, 1-3% of the silicon wafer will be damaged and cannot be used normally, while the single-component cleaning solution has a cleaning effect poor problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Silicon wafer cleaning solution is composed of A component and B component according to the mass ratio of 2:1.

[0025] According to the parts by mass, component A is composed of: 15 parts of sodium hydroxide, 12 parts of lutamine, 8 parts of disodium edetate; 4 parts of ethanol;

[0026] Component B is composed of 9 parts of polyoxyethylene ether, 5 parts of citric acid, 1 part of KH-550, and 12 parts of propylene glycol methyl ether in parts by mass.

[0027] Add component A and component B to 20 times of deionized water to dilute, then mix well to obtain a cleaning solution, and put the silicon wafer into the cleaning solution at room temperature for cleaning.

[0028] The water contact angle of the cleaned silicon wafers measured by the water contact angle measuring instrument is ≤5°, and the yield rate after sorting by the automatic sorter is ≥99%.

Embodiment 2

[0030] Silicon wafer cleaning solution is composed of A component and B component according to the mass ratio of 2:1.

[0031] According to the parts by mass, component A is composed of: 10 parts of potassium hydroxide, 10 parts of lutamine, 6 parts of disodium edetate; 4 parts of diethyl ether;

[0032] Component B is composed of 8 parts of polyoxyethylene ether, 3 parts of citric acid, 1 part of KH-570, and 10 parts of dipropylene glycol methyl ether in parts by mass.

[0033] Add component A and component B to 20 times of deionized water to dilute, then mix well to obtain a cleaning solution, and put the silicon wafer into the cleaning solution at room temperature for cleaning.

[0034] The water contact angle of the cleaned silicon wafers measured by the water contact angle measuring instrument is ≤5°, and the yield rate after sorting by the automatic sorter is ≥99%.

Embodiment 3

[0036] Silicon wafer cleaning solution is composed of A component and B component according to the mass ratio of 2:1.

[0037] According to the parts by mass, component A is composed of: 20 parts of potassium hydroxide, 15 parts of lutamine, 10 parts of tetrasodium edetate; 5 parts of diethyl ether;

[0038] Component B is composed of 10 parts of polyoxyethylene ether, 6 parts of citric acid, 2 parts of KH-570, and 13 parts of dipropylene glycol methyl ether in terms of parts by mass.

[0039] Add component A and component B to 25 times of deionized water to dilute respectively, then mix well to obtain a cleaning solution, and put the silicon chip into the cleaning solution at room temperature for cleaning.

[0040] The water contact angle of the cleaned silicon wafers measured by the water contact angle measuring instrument is ≤5°, and the yield rate after sorting by the automatic sorter is ≥99%.

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Abstract

The invention relates to the technical field of silicon wafer cleaning, in particular to a two-component silicon wafer cleaning solution. The silicon wafer cleaning solution is composed of a componentA and a component B according to a mass ratio of 2: 1, wherein the component A is prepared from hydroxide, dimethyl pyridylamine, a complexing agent and a cosolvent; and the component B consists of asurfactant, citric acid, a silane coupling agent and alcohol and ether organic solvents. According to the invention, the surfactant, the citric acid and an alkali are respectively put into the two components to prepare the two-component silicon wafer cleaning solution, the dosage of the surfactant can be increased, the two-component silicon wafer cleaning solution can be prepared, the citric acidcan be added, and the complexing action of the citric acid is utilized to prevent cleaned particles from being re-deposited, so that the cleaning effect of the cleaning solution is better. The cleaning solution is high in cleaning capacity, impurities attached to the surface of a silicon wafer can be effectively removed, the cleanliness of the surface of the silicon wafer is guaranteed, the yieldis greatly increased, and the product quality is effectively guaranteed.

Description

technical field [0001] The invention relates to the technical field of silicon wafer cleaning, in particular to a two-component silicon wafer cleaning solution. Background technique [0002] Due to its non-polluting, renewable, non-regional and other advantages, solar energy is more and more favored by people, and the solar energy industry has also been developed. With the maturity of the solar photovoltaic industry, the use of silicon wafers is also increasing. [0003] Silicon wafer is an important component in solar photovoltaic power generation equipment. Cleaning is one of the production processes of silicon wafer. The quality of cleaning has a great influence on the performance of silicon wafer. The main purpose of cleaning is to clean away the sand, residual cutting abrasives, metal ions and fingerprints generated during the cutting process, so that the surface of the silicon wafer can achieve technical indicators such as no corrosion, no oxidation, and no residue. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/72C11D3/04C11D3/28C11D3/33C11D3/44C11D3/20C11D3/16C11D3/60C11D11/00
CPCC11D1/72C11D3/044C11D3/28C11D3/33C11D3/43C11D3/2086C11D3/162C11D3/2068C11D2111/22
Inventor 张小飞
Owner CHANGZHOU GREATOP NEW MATERIAL CO LTD
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