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Hard mask composition, hard mask and pattern forming method

A hard mask and composition technology, applied in the field of photolithography, can solve the problems of low carbon content of resin, poor solubility of pyrene phenolic resin, and inability to form vertical pattern structure, etc., and achieve excellent heat resistance effect

Active Publication Date: 2020-06-16
XIAMEN HENGKUN NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, compared with pyrene phenolic resin, fluorene phenolic resin and carbazole phenolic resin, the carbon content of the resin is slightly lower, and the pattern formed by the hard mask formed by fluorene phenolic resin is usually bowed or twisted after etching, and cannot be formed. Vertical pattern structure; although pyrene phenolic resin has good etch resistance, the solubility of pyrene phenolic resin is poor, and the coating performance of the corresponding hard mask composition is poor

Method used

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  • Hard mask composition, hard mask and pattern forming method
  • Hard mask composition, hard mask and pattern forming method
  • Hard mask composition, hard mask and pattern forming method

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example

[0090] Synthesis of monomer

[0091] Synthesis of Monomer 2-1

[0092] step one:

[0093] Under argon protection, 18.0g (50mmol) 1,6-dibromopyrene, 26.2g (105mmol) 2-nitrophenylboronic acid pinacol ester, 27.6g (200mmol) potassium carbonate, 2.3 g (2mmol) tetrakistriphenylphosphinopalladium and 500ml toluene, stirred evenly, heated to 120°C for 6h, cooled the reaction solution, and quenched the reaction with water. The organic phase was separated, and the aqueous phase was extracted three times with toluene. The organic phases were combined, dried over anhydrous magnesium sulfate, filtered, spin-dried to dry the solvent, and purified by silica gel thin-layer chromatography to obtain intermediate product 1. The synthesis process of intermediate product 1 is shown in Reaction Scheme 1.

[0094] Reaction 1

[0095]

[0096] Step two:

[0097] Under argon protection, add 17.8g (40mmol) intermediate product 1, 50.4g (192mmol) triphenylphosphine, 0.69g (2mmol) molybdenum-bas...

Synthetic example 1

[0126] Repeat the synthetic steps of polymer 1-1a, the difference is, use 3.38g (20mmol) carbazole to replace 7.6g (20mmol) monomer 2-1, obtain the target polymer (Mw with the structural unit shown in chemical formula 14-1 =5900, polydispersity=2.13, n=18).

[0127] Chemical formula 14-1

[0128]

Synthetic example 2

[0130] The target polymer (Mw=10000, polydispersity=2.0, n=17) represented by chemical formula 15-1 was synthesized according to the method of CN200710302240.7 Example 1.

[0131] Chemical formula 15-1

[0132]

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Abstract

The invention belongs to the field of photoetching, and discloses a hard mask composition, a hard mask and a pattern forming method. The hard mask composition includes a polymer and a solvent, whereinthe polymer has a structure represented by a chemical formula 1 shown in the description, R1 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, Ar1 and Ar2 each independently represent a substituted or unsubstituted phenyl group or naphthyl group, and n is an integer ranging from 1 to 100. The hard mask formed by the hard mask composition provided by the invention has high heat resistance and etching resistance.

Description

technical field [0001] The invention belongs to the field of photolithography, and in particular relates to a hard mask composition containing a polymer with high carbon content, a hard mask and a pattern forming method thereof. [0002] technical background [0003] During the photolithography process, when the photoresist is insufficient to provide sufficient etch resistance for subsequent etching steps, such as when the thickness of the photoresist is thin, the aspect ratio of the pattern to be etched is large, or in When continuing to form a new pattern on the patterned substrate, an intermediate layer with characteristics such as chemical resistance, heat resistance and etch resistance is required, and the hard mask material (photoinduced The pattern of resist) is accurately transferred to the material layer to be etched, and this intermediate layer is called "hard mask" or "resist underlayer film". [0004] The hardmask materials described above have evolved from amorp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11
CPCG03F7/11
Inventor 王静肖楠宋里千
Owner XIAMEN HENGKUN NEW MATERIAL TECH