Three-color Micro/Nano LED array without mass transfer and manufacturing method thereof

Abstract

The invention discloses a three-color Micro / Nano LED array without mass transfer and a manufacturing method thereof. The manufacturing method comprises the steps of forming a hexagonal micro-nano holearray structure comprising a polar surface and a semi-polar surface through technologies such as graphical photoetching and inductively coupled plasma etching on an n-type GaN substrate; simultaneously forming red, green and blue light multi-quantum well structures with the light emitting wavelengths being 580-680nm, 480-580nm and 380-480nm respectively and a p-type layer by means of secondary epitaxy; and manufacturing a wafer-level three-color Micro / Nano LED array by utilizing processes of photoetching, etching, coating and the like, wherein all single repetitive units of the array comprisethree RGB three-color wavelength LEDs with a coaxial nested hexagonal structure. According to the invention, the preparation process of the three-color Micro / Nano LED is greatly simplified, the preparation period of the device is shortened, the device can be expanded to a nanometer level, and a powerful way is provided for reducing the size of a single display pixel. According to the method, thethree-color LED array covering the Micro to Nano size levels and the Micro / Nano LED display screen with the ultrahigh resolution can be manufactured without mass transfer.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and relates to a semiconductor optoelectronic device, in particular to a three-color Micro / Nano LED array without mass transfer and a manufacturing method thereof. Background technique [0002] With the wide application of portable mobile electronic products, display technology is developing towards the direction of small size, high resolution and low power consumption. At present, the pixel distance of traditional LED displays based on Group III nitrides is on the order of millimeters, which can no longer meet people's needs for high resolution. Micro / Nano (micro-nano) LEDs have reduced pixel distances to microns or even nanometers. It combines the advantages of high resolution, low power consumption, high brightness, and high color saturation. It can be regarded as the latest generation of display technology that surpasses liquid crystal display and organic light-emitting ...

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Problems solved by technology

Although the proposed electrostatic force adsorption, electromagnetic force adsorption, fluid assembly, van der Waals force transfer and other methods can be used to achieve mass transfer, but these methods have a long preparation cycle, which leads to a decrease in the efficiency and reliability of the device, and the fabrication process is difficult to expand to Nanoscale, so it is impossible to further reduce the size of individual display pixels and ultimately increase the resolution

[0004] Recently, a research group realized Micro / Nano LED light-emitting unit arrays by epitaxial nanocolumn / wire structures on the same substrate, but the epitaxial growth of nanocolumn / wire structures is difficult to control, and the corresponding device manufacturing process is more complicated.

The Chinese patent application number 201710111713.9 discloses a wafer-level micron-nano-scale semiconductor LED display and its preparation method. By etching out 3X sets of micron-nano-sized elements to control the angle between the three sets of surfaces, the three sets of The luminous wavelength of the active layer InGaN / GaN is in the RGB band, but this structure requires very precise micro-cutting of crystal plane positioning, and the manufacturing process has high precision

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