Aluminum nitride-based light-emitting diode structure and manufacturing method thereof

Abstract

This application discloses an aluminum nitride-based light-emitting diode structure and its manufacturing method, which relate to the technical field of light-emitting diode production, including: a substrate; a first AlN layer; a second AlN layer; an N-type Al a Ga 1‑a N ohmic contact layer; multi-quantum well active layer; electron blocking layer, electron blocking layer and first Al y Ga 1‑y The lattice constant mismatch of the N quantum barrier layer is less than 0.2%; the P-type Al d Ga 1‑d N transition layer; P-type GaN ohmic contact layer. This application sets the electron blocking layer with the first Al y Ga 1‑y The lattice constant mismatch between the N quantum barrier layers is less than 0.2%, so that the electron blocking layer plays a better role in blocking electrons, suppressing the overflow of electrons, and improving the recombination of electrons and holes in the multi-quantum well active region. probability, improve the luminous efficiency, and also make the thickness, composition and P-type doping concentration of the electron blocking layer adjustable in a wide range, which has its advantages in improving the crystal quality and the overall yield of the product.

Description

technical field [0001] The present application relates to the technical field of light-emitting diode production, in particular, to an aluminum nitride-based light-emitting diode structure and a manufacturing method thereof. Background technique [0002] Ultraviolet rays can be divided into long-wave ultraviolet rays of 320-400nm (abbreviated as UVA), medium-wave ultraviolet rays of 280-320nm (abbreviated as UVB) and short-wave ultraviolet rays of 200-280nm (abbreviated as UVC) according to the wavelength. With the continuous advancement of light-emitting diode technology, in recent years, light-emitting diodes in the ultraviolet band have also received high attention. [0003] The main materials of UVB LEDs and UVC LEDs are AlGaN-based compound semiconductors, which have problems of lattice and thermal mismatch and low mobility of Al atoms, resulting in poor crystallization quality of AlGaN materials and external quantum efficiency below 5%. In addition, as the wavelength ...

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Problems solved by technology

[0003] The main materials of UVB LEDs and UVC LEDs are AlGaN-based compound semiconductors, which have problems of lattice and thermal mismatch and low Al atomic mobility, resulting in poor crystallization quality of AlGaN materials and external quantum efficiency below 5%.

In addition, as the wavelength becomes shorter, the Al composition in the P-type doped layer AlGaN increases correspondingly, and the activation energy of doped Mg increases, which makes the activation efficiency of Mg worse, resulting in insufficient hole concentration, but the N-type doped layer doped The impurities are mainly Si, and the electron concentration can reach 10 18 cm -3 Above, 1 to 2 levels higher than the hole concentration, so the concentration of injected electrons and holes does not match, and the phenomenon of electron overflow is serious, resulting in the luminous efficiency of UVB LED and UVC LED cannot be effectively improved, and it will increase the electron and hole concentration. The probability of recombination luminescence in the p-type doped layer causes the problem of clutter in the luminescence spectrum

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