Organic electroluminescent device comprising dopant material and plurality of host materials
A technology of electroluminescent devices and host materials, which is applied in the direction of organic semiconductor devices, electric solid devices, semiconductor devices, etc., can solve problems such as unattended coordination, and achieve the effect of improving performance and improving lifespan
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[0150] Example 1-1: Preparation of an organic electroluminescent device containing the material combination of the present invention.
[0151] First, the glass substrate, which has an 80nm thick indium tin oxide (ITO) anode, is cleaned, and then treated with UV ozone and oxygen plasma. After processing, the substrate is dried in a glove box filled with nitrogen to remove moisture, and then the substrate is mounted on the substrate holder and loaded into the vacuum chamber. The organic layer specified below, the vacuum degree is about 10 -8 In the case of Torr, vapor deposition is sequentially performed on the ITO anode through thermal vacuum at a rate of 0.2-2 angstroms / sec. The compound HI is used as a hole injection layer (HIL) with a thickness of 100 angstroms. The compound HT is used as a hole transport layer (HTL) with a thickness of 350 angstroms. Compound H-25 is used as an electron blocking layer (EBL) with a thickness of 50 angstroms. Then compound D-174 is doped in t...
Example
[0152] Comparative Examples 1-1 to 1-3: The preparation method is the same as that of Example 1-1, except that the host material of the light-emitting layer of Comparative Examples 1-1 to 1-3 in Table 1 is used, and the host material is The weight ratio of the dopant is adjusted to 80:20, which is the best ratio of the single-component host to the weight ratio of the dopant used.
Example
[0153] Comparative Examples 1-4 to 1-6: The preparation method is the same as that of Example 1-1, except that the host materials of the light-emitting layer of Comparative Examples 1-4 to 1-6 in Table 1 are used.
[0154] The detailed device layer structure and thickness are shown in Table 1. For layers with more than one kind of materials, different compounds are doped in the weight ratios described.
[0155] Table 1
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[0158] The structure of some materials used in the device is as follows:
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[0161] Table 2 lists the test results of Example 1-1 and Comparative Example 1-1 to Comparative Example 1-6. The color coordinates, peak wavelength and half-width in Table 2 are measured at a brightness of 1000 nits, and the voltage, external quantum efficiency, and current efficiency are measured at a current density of 15mA / cm 2 Measured below, the lifetime is the time required for the initial luminance of 10,000 nits to decay to 95% of the initial luminan...
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