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CxNy/BiVO4 material for photoanode and preparation method and application thereof

A photoanode and electrode technology, applied in the field of photoanode material preparation, can solve problems such as inability to form an interface, and achieve the effects of low cost, good technical foundation and cost advantage, and improved efficiency

Active Publication Date: 2020-07-03
CHINA ACADEMY OF SPACE TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, carbon nitride-like (C x N y ) related reports on bismuth vanadate modification, but most of them are based on physical mixing method, C x N y with BiVO 4 An effective interface cannot be formed between them, so the performance improvement is limited

Method used

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  • CxNy/BiVO4 material for photoanode and preparation method and application thereof
  • CxNy/BiVO4 material for photoanode and preparation method and application thereof
  • CxNy/BiVO4 material for photoanode and preparation method and application thereof

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preparation example Construction

[0036] C proposed by the present invention x N y / BiVO 4 A method for preparing a photoanode, comprising the steps of:

[0037] (1) Synthesis of bulk carbon nitride (BCN);

[0038] The method of synthesizing bulk carbon nitride (BCN) is: heating and calcining the mixture of dicyandiamide and urea in the air atmosphere of a tube furnace. Raise the temperature to 300°C, then raise the temperature to 500°C at a rate of 1-4°C / min, then raise the temperature to 550°C at a rate of 1-3°C / min, keep it warm for 2-6 hours, and finally The cooling rate of 1-7°C / min reduces the temperature to 30°C, and the molar ratio of dicyandiamide to urea is 1-4:1;

[0039] (2) Synthesis of carbon nitride hydrogel (CNH);

[0040] The method for synthesizing carbon nitride hydrogel (CNH) is: disperse the bulk carbon nitride (BCN) prepared in step (1) in deionized water, then carry out hydrothermal reaction in the reactor, and the hydrothermal reaction temperature is 150 -250°C, the hydrothermal r...

Embodiment 1

[0058] Embodiment 1, preparation C x N y / BiVO 4 photoanodic method

[0059] (1) Synthesis of bulk carbon nitride (BCN): the mixture of dicyandiamide and urea (4:1 molar ratio) is heated in the air atmosphere of a tube furnace, and the temperature program for calcination is as follows: 30-300 ° C (8 ℃ / min); 300-500℃(2℃ / min); 500-550℃(1℃ / min); 550-550℃(4h); 550-30℃(5℃ / min);

[0060] (2) Synthesis of carbon nitride hydrogel (CNH): 0.5 g of BCN was dispersed in 20 mL of deionized water. Then it was transferred to a 100mL reactor for hydrothermal reaction and kept at 180°C for 5h to obtain a suspension.

[0061] (3) Nanoporous BiVO 4 Electrode synthesis: Dissolve 20mmol KI in 50mL deionized water and stir for 15min, then add HNO 3 Adjust the pH to 1.7. After stirring for 15min, add 2mmol Bi(NO 3 ) 3 ·5H 2 O, and then stirred for 15min to form a plating solution. This solution was mixed with 20 mL of absolute ethanol containing 4.6 mmol p-benzoquinone and stirred vigorou...

Embodiment 2

[0064] Embodiment 2, preparation C x N y / BiVO 4 photoanodic method

[0065] (1) Synthesis of bulk carbon nitride (BCN): the mixture of dicyandiamide and urea (4:1 molar ratio) is heated in the air atmosphere of a tube furnace, and the temperature program for calcination is as follows: 30-300 ° C (8 ℃ / min); 300-500℃(2℃ / min); 500-550℃(1℃ / min); 550-550℃(4h); 550-30℃(5℃ / min);

[0066] (2) Synthesis of carbon nitride hydrogel (CNH): 0.5 g of BCN was dispersed in 20 mL of deionized water. Then it was transferred to a 100mL reactor for hydrothermal reaction and kept at 180°C for 5h to obtain a suspension.

[0067] (3) Nanoporous BiVO 4 Electrode synthesis: Dissolve 20mmol KI in 50mL deionized water and stir for 15min, then add HNO 3 Adjust the pH to 1.7. After stirring for 15min, add 2mmol Bi(NO 3 ) 3 ·5H 2 O, and then stirred for 15min to form a plating solution. This solution was mixed with 20 mL of absolute ethanol containing 4.6 mmol p-benzoquinone and stirred vigorou...

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Abstract

The invention relates to a CxNy / BiVO4 material for a photoanode and a preparation method and application thereof, and belongs to the technical field of preparation of photoanode materials. The preparation method comprises the following steps that a mixture of dicyandiamide and thiourea is calcined in a muffle furnace to obtain bulk-phase carbon nitride; then the bulk-phase carbon nitride is dispersed in deionized water, and transferred into a hydrothermal reactor to be kept in a certain temperature for a certain time to obtain carbon nitride hydrogel; then electrochemical deposition and subsequent annealing treatment is used for obtaining a nano-porous BiVO4 electrode; and the carbon nitride hydrogel is dripped on the BiVO4 electrode for annealing treatment to obtain a CxNy / BiVO4 photoanode. According to the CxNy / BiVO4 photoanode, the proper interfacial charge distribution is beneficial to the separation of photon-generated carriers in the CxNy / BiVO4 interface region, so that the recombination of electron-hole pairs is reduced.

Description

technical field [0001] The present invention relates to a C for photoanode x N y / BiVO 4 The material and its preparation method and application belong to the technical field of photoanode material preparation. Background technique [0002] Bismuth vanadate (BiVO 4 ) is an n-type semiconductor with a bandgap of 2.4eV, which has the advantages of suitable bandgap, high activity, and low cost, and has been considered as a promising photoanode material in recent years. However, most reported BiVO 4 The photocurrent density is much lower than its theoretical value (7.5 mA / cm at AM 1.5G 2 ), which have problems such as poor separation and transport of photogenerated carriers, severe surface recombination, and slow water oxidation kinetics. [0003] Combining with other semiconductors is an effective way to improve the performance of bismuth vanadate. At present, carbon nitride (C x N y ) related reports on bismuth vanadate modification, but most of them are based on phys...

Claims

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Application Information

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IPC IPC(8): C25D9/04C25B1/04C25B11/04G01N27/30G01N27/48
CPCC25B1/04C25D9/04C25B1/55C25B11/069G01N27/305G01N27/48Y02E60/36
Inventor 姜文君王宇宏姚伟刘再伦刘喆
Owner CHINA ACADEMY OF SPACE TECHNOLOGY
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