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N-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof

A bismuth telluride-based, thermoelectric material technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problem of single structure, limited thermoelectric performance, carrier concentration and mobility cannot be improved synergistically and other problems, to achieve the effect of simple process, high product purity and fine grain size

Active Publication Date: 2020-07-28
广西自贸区见炬科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are about 200 kinds of thermoelectric material systems, among which bismuth telluride-based thermoelectric materials are the most widely used, but at present domestic bismuth telluride thermoelectric materials, especially n-type bismuth telluride-based thermoelectric materials have a single structure, and there are carrier concentrations and The problem that the mobility cannot be improved synergistically limits the improvement of thermoelectric performance. Therefore, the present invention proposes an n-type bismuth telluride-based thermoelectric material with a modulated structure and its preparation method to solve the problems existing in the prior art

Method used

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  • N-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof

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Embodiment 1

[0025] Including composition as n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equivalent molar ratio mixed powder, wherein 0.1≤x≤0.9, the internal structure of the crystal atom of the n-type bismuth telluride-based thermoelectric material with the modulated structure is the modulated structure.

[0026] Its preparation method is: step 1, according to n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x The ratio of the amount of the substance is 1:1 ingredients, wherein 0.1≤x≤0.9, and then mixed uniformly to obtain mixed powder;

[0027] Step 2: Put the mixed powder into a ball mill jar, and ball mill it for 1-12 hours under an inert atmosphere to obtain n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equimolar mixed powder, where 0.1≤x≤0.9;

[0028] Step 3, the n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equivalent molar ratio of mixed powder into the mold, where 0.1≤x≤0.9, placed in the plasma activation sintering furnace, and then start to raise the temperature and pressure at a constant speed...

Embodiment 2

[0035] Including composition as n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equimolar ratio mixed powder, where 0.1≤x≤0.4, the internal structure of crystal atoms of n-type bismuth telluride-based thermoelectric material with modulation structure is modulation structure.

[0036] Its preparation method is: step 1, according to n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x The ratio of the amount of the substance is 1:1 ingredients, wherein 0.1≤x≤0.4, and then mixed uniformly to obtain mixed powder;

[0037] Step 2: Put the mixed powder into a ball mill jar, and ball mill it for 1-6 hours under an inert atmosphere to obtain n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equimolar mixed powder, where 0.1≤x≤0.4;

[0038] Step 3, the n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equivalent molar ratio mixed powder into the mold, where 0.1≤x≤0.4, placed in the plasma activation sintering furnace, and then start the uniform speed rise and pressure rise at the same time, at the same time rise to...

Embodiment 3

[0045] Including composition as n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equimolar ratio mixed powder, wherein 0.2≤x≤0.5, the internal structure of crystal atoms of n-type bismuth telluride-based thermoelectric material with modulation structure is modulation structure.

[0046] Its preparation method is: step 1, according to n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x The ratio of the amount of the substance is 1:1 ingredients, wherein 0.2≤x≤0.5, and then mixed uniformly to obtain mixed powder;

[0047] Step 2: Put the mixed powder into a ball mill jar, and ball mill it for 2 to 7 hours under an inert atmosphere to obtain n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equimolar mixed powder, where 0.2≤x≤0.5;

[0048] Step 3, the n-type Bi 2 Te 3 and Bi 2 Te 3-x Se x Equivalent molar ratio mixed powder into the mold, where 0.2≤x≤0.5, placed in the plasma activation sintering furnace, and then start the uniform speed rise and pressure rise at the same time, and rise to the tem...

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Abstract

The invention discloses an n-type bismuth telluride-based thermoelectric material with a modulation structure and a preparation method thereof. The material comprises mixed powder of n-type Bi<2>Te<3>and Bi<2>Te<3-x>Se<x> mixed in an equimolar ratio, wherein x is larger than or equal to 0.1 and smaller than or equal to 0.9. The internal structure of crystal atoms of the n-type bismuth telluride-based thermoelectric material with the modulation structure is the modulation structure; the purity of Bi<2>Te<3> powder is larger than or equal to 99.99 wt%, and the particle size of the Bi<2>Te<3> powder is smaller than or equal to 500 [mu]m; and the purity of Bi<2>Te<3-x>Se<x> powder is greater than or equal to 99.99 wt%, the particle size of the Bi<2>Te<3-x>Se<x> powder is less than or equal to500 [mu]m, and x is greater than or equal to 0.1 and less than or equal to 0.9. The preparation method has the characteristics of simple process, short production period and high production efficiency, and the prepared n-type bismuth telluride-based thermoelectric material with the modulation structure is high in purity, low in thermal conductivity and high in electrical conductivity, has the modulation structure, and can synergistically improve a carrier concentration and carrier mobility.

Description

technical field [0001] The invention relates to the technical field of electrothermal materials, in particular to an n-type bismuth telluride-based thermoelectric material with a modulated structure and a preparation method thereof. Background technique [0002] As a new energy material, thermoelectric materials can directly realize direct mutual conversion of heat energy and electric energy. The corresponding thermoelectric application devices have simple structure, no transmission parts, no noise and emissions, and are widely used in computer / communication base station chip refrigeration, air conditioners, refrigerators , Aerospace / polar exploration equipment power supply and other fields are the current hot spots in the field of material research. The most important criterion for evaluating thermoelectric materials is the dimensionless thermoelectric figure of merit (ZT), ZT=(S 2 σ / κ)T; where: S is the Seebeck coefficient, σ is the electrical conductivity and κ is the th...

Claims

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Application Information

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IPC IPC(8): C04B35/547C04B35/622C04B35/64H01L35/16H01L35/34
CPCC04B35/547C04B35/622C04B35/64C04B2235/5427C04B2235/602C04B2235/666C04B2235/656C04B2235/6567H10N10/852H10N10/01
Inventor 刘峰铭
Owner 广西自贸区见炬科技有限公司