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Single-crystal spin electronic device, preparation method thereof and three-dimensional integrated preparation method of single-crystal spin electronic device

A technology of spintronic devices and electronic devices, which is applied in the fields of magnetic field controlled resistors, manufacturing/processing of electromagnetic devices, material selection, etc. It can solve the problems of lack of practical preparation technology, failure to apply, and high price. Achieve good bonding effect, ensure performance and improve performance

Pending Publication Date: 2020-08-04
AEROSPACE INFORMATION RES INST CAS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the current GMR and TMR devices grown by high-performance single crystal epitaxial growth need to use expensive single crystal magnesium oxide substrates, lack of matching practical preparation process, so the device is still in the laboratory stage and cannot be applied

Method used

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  • Single-crystal spin electronic device, preparation method thereof and three-dimensional integrated preparation method of single-crystal spin electronic device
  • Single-crystal spin electronic device, preparation method thereof and three-dimensional integrated preparation method of single-crystal spin electronic device
  • Single-crystal spin electronic device, preparation method thereof and three-dimensional integrated preparation method of single-crystal spin electronic device

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Embodiment Construction

[0050]By using the specific bonding material (Au-Au bonding layer material) proposed by the present invention, bonding process (room temperature surface reaction bonding process), thinning process (high-speed low-loss coarse and fine grinding, wet etching) and micromachining process , spintronic devices grown by single-crystal epitaxial growth were prepared on polycrystalline electrodes, and high-performance spintronic devices grown by single-crystal epitaxial growth could be used in next-generation Hard Disk Drive read head sensors and Magnetic Random Access Memory (MRD) devices. AccessMemory), magnetic sensor (Magnetic sensor) and spin logic circuit (Spin logic circuit) in the application.

[0051] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0052] Such as image 3 Sho...

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Abstract

The invention discloses a single-crystal spin electronic device. The structure of the electronic device sequentially comprises a substrate; a seed layer having a B2 crystal structure on the substrate;and a GMR or TMR multilayer film structure positioned on the seed layer with the B2 crystal structure. According to the invention, the thermal stability of the spin electronic device is improved by using nickel-aluminum alloy and cobalt-iron alloy (NiAl / CoFe) double seed layers such that the performance of the device can be improved by annealing treatment at a higher temperature. The invention provides a complete technological process and method for preparing a single crystal (001) crystal orientation spin electronic device on a polycrystalline electrode. The key problem that an existing high-performance single-crystal epitaxial growth spin electronic device needs an expensive single-crystal magnesium oxide substrate and lacks a practical preparation process matched with the expensive single-crystal magnesium oxide substrate is successfully solved, and a solution is provided for the low-cost and large-scale production of the high-performance single-crystal spin electronic device on asilicon wafer.

Description

technical field [0001] The invention relates to the technical field of electronic device preparation, in particular to a single crystal GMR and TMR spin electronic device, a preparation method and a three-dimensional integrated preparation method thereof. Background technique [0002] Spintronic devices such as giant magnetoresistance GMR (Giant Magnetoresistance) and tunneling magnetoresistance TMR (Tunneling Magnetoresistance) have been widely used in information technology fields such as computer hard disk heads, memories, and industrial control sensors. With the rapid development of big data and Internet of Things technology, there is an increasing demand for fast, efficient, and low-power storage and calculation of massive information data. To meet this demand, there is an urgent need to develop next-generation higher-performance spintronic devices. [0003] At present, polycrystalline spintronic devices based on giant magnetoresistance (GMR) effect and tunneling magne...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01L43/12
CPCH10N50/85H10N50/10H10N50/01
Inventor 陈嘉民
Owner AEROSPACE INFORMATION RES INST CAS
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