A silicon carbide based co 2 Reflective film and preparation method thereof
A silicon carbide, reflective film technology, applied in mirrors, instruments, optics, etc., can solve technical difficulties and other problems
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Embodiment 1
[0031] Such as image 3 As shown, the CO based on the SiC substrate 2 The reflective film includes a silicon carbide base layer, a diamond-like film layer, a nickel-chromium alloy adhesive layer, a metal film, a first germanium layer, a first zinc sulfide layer, a second germanium layer, a second zinc sulfide layer, The first YbF3 layer, the first ZnSe layer, the second YbF3 layer and the second ZnSe layer; the thickness of the diamond-like film layer is 1.2 μm, the thickness of the nickel-chromium alloy bonding layer is 0.2 μm, and the thickness of the metal film is 0.2 μm, The thickness of the first germanium layer is 1.7 μm, the thickness of the first zinc sulfide layer is 0.5 μm, the thickness of the second germanium layer is 1.7 μm, the thickness of the second zinc sulfide layer is 0.5 μm, and the thickness of the first YbF3 layer is 0.18 μm, the thickness of the first ZnSe layer is 0.08μm, the second YbF 3 The thickness of the layer is 0.18 μm and the thickness of the ...
Embodiment 2
[0043] CO based on SiC substrates 2 Reflective film, the difference of embodiment 1 is: the thickness of the diamond-like film layer is 1.1 μm, the thickness of the nickel-chromium alloy bonding layer is 0.2 μm, the thickness of the metal film is 0.2 μm, and the thickness of the first germanium layer is 1.6 μm , the thickness of the first zinc sulfide layer is 0.6 μm, the thickness of the second germanium layer is 1.6 μm, the thickness of the second zinc sulfide layer is 0.6 μm, the thickness of the first YbF3 layer is 0.19 μm, and the thickness of the first ZnSe layer is 0.07μm, second YbF 3 The thickness of the layer is 0.19 μm and the thickness of the second ZnSe layer is 0.07 μm; the preparation method refers to Example 1; the infrared spectrophotometer Spectrum100 is used for index detection, and the single-sided reflection at 10600 nm reaches 99.8%, and the reflection at the red light reaches 80% ;
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