Solar cell containing alkali metal doped copper-indium-gallium-selenium absorption layer
A technology of solar cells and copper indium gallium selenide, which is applied to circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of low conversion efficiency of solar cells and poor consistency of solar cells, and achieves improved conversion efficiency, good performance consistency, and improved The effect of crystal quality
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[0035] According to the present invention, the second alkali metal layer is a halide layer of any one of K, Rb and Cs. The preparation method of the second alkali metal layer is not particularly limited. It is preferably formed by at least one method among vacuum evaporation, vacuum sputtering, sol-gel and nano-spraying, and more preferably formed by vacuum evaporation. Preferably, the vacuum evaporation conditions for forming the second alkali metal layer include: the evaporation source is a halide containing at least one of K, Rb and Cs, and the vacuum degree is at least 8×10 -4 pa, the temperature of the substrate is 200-300°C, and the temperature of the evaporation source is 400-700°C; preferably, the halide is at least one of fluoride, chloride, bromide and iodide. More preferably, the thickness of the second alkali metal layer is 10-40 nm.
[0036] According to the present invention, the solar cell further includes a buffer layer, a window layer and a grid line arranged...
Embodiment 1
[0043] This example is used to illustrate the solar cell containing the alkali metal-doped CIGS absorption layer of the present invention.
[0044] (1) Form a barrier layer on the substrate: Soda-lime glass is used as the substrate after cleaning, and a Si layer with a thickness of 40nm is formed on the substrate by sputtering. 3 N 4 barrier layer.
[0045] (2) Form a back electrode layer formed by a three-layer molybdenum thin film on the barrier layer: the degree of vacuum is 1×10 -4 pa, the working pressure is 1Pa, the substrate temperature is 40°C, the RF power is 150W, and the Ar flow rate is 40sccm to form the first molybdenum film with a thickness of 150nm; the working pressure is adjusted to 0.1Pa, and the substrate temperature is 40 ℃, the RF power is 150W, and the Ar flow rate is 40sccm, a second layer of molybdenum film with a thickness of 800nm is formed on the surface of the first layer of molybdenum film; the working pressure is adjusted to 0.7Pa, the substra...
Embodiment 2
[0055] This example is used to illustrate the solar cell containing the alkali metal-doped CIGS absorption layer of the present invention.
[0056] (1) Form a barrier layer on the substrate: the polyimide film is used as the substrate after cleaning, and a SiO layer with a thickness of 50 nm is formed on the substrate by sputtering. 2 barrier layer.
[0057] (2) Form a back electrode layer formed by a three-layer molybdenum thin film on the barrier layer: the degree of vacuum is 2×10 -4 Pa, the working pressure is 1Pa, the substrate temperature is 50℃, the radio frequency power is 200W, and the Ar flow rate is 50sccm, the first layer of molybdenum film is formed with a thickness of 100nm; the working pressure is adjusted to 0.1Pa, and the substrate temperature is 50 ℃, the RF power is 200W, and the Ar flow rate is 50sccm, a second layer of molybdenum film with a thickness of 700nm is formed on the surface of the first layer of molybdenum film; the working pressure is adjusted...
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Abstract
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