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Plasma-etching-resistant ceramics, preparation method thereof, and plasma-etching equipment

An ion etching and plasma technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of difficult sintering of ceramics, brittle fractures, and limitations of ceramic applications, and achieve dense sintering, good corrosion resistance, The effect of not easily contaminating the wafer

Active Publication Date: 2022-06-07
SHENZHEN SUNTECH ADVANCED CERAMICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

but since Y 2 o 3 Ceramic sintering is difficult to compact, and the fracture toughness is poor, and brittle fracture is prone to occur, resulting in Y 2 o 3 The application of ceramics is greatly limited

Method used

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  • Plasma-etching-resistant ceramics, preparation method thereof, and plasma-etching equipment
  • Plasma-etching-resistant ceramics, preparation method thereof, and plasma-etching equipment
  • Plasma-etching-resistant ceramics, preparation method thereof, and plasma-etching equipment

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preparation example Construction

[0031] The preparation method of the plasma-etch-resistant ceramics in one embodiment includes the following steps:

[0032] Step S110: Weigh the following raw materials by mass percentage: 64.7%-100% of nano-scale yttrium oxide powder and 0%-35.3% of nano-scale zirconia powder, and the purity of nano-scale yttrium oxide powder is not less than 90.0% .

[0033] Specifically, in the raw material, the mass percentage of the nano-scale yttrium oxide powder is 64.7%, 70%, 75%, 80%, 88%, 90%, 95% or 100%. The mass percentage of the nano-sized zirconia powder is 0, 5%, 10%, 12%, 20%, 25%, 30% or 35.3%.

[0034] In one embodiment, the nanoscale zirconia powder is yttria-doped zirconia powder, and in the nanoscale zirconia powder, the total content of yttria and zirconia is not less than 90.0%. In another embodiment, the nano-scale zirconia powder does not contain yttrium oxide, and the purity of the nano-scale zirconia powder is not less than 90.0%. By controlling the purity or co...

Embodiment 1

[0061] The preparation process of the plasma-etch-resistant ceramic of the present embodiment is as follows:

[0062] Weigh nanoscale Y 2 O 3 The powder is loaded into a graphite mold and sintered in a vacuum hot-pressing furnace. The sintering atmosphere is argon. During the sintering process, the temperature is first heated to 1400°C at a heating rate of 8°C / min, and kept for 1 hour. Then start to pressurize, continue to pressurize slowly to a pressure of 40MPa, heat to 1700°C at a heating rate of 4°C / min, hold for 1.5h, and cool to obtain the plasma etching resistant ceramic of this embodiment.

Embodiment 2

[0064] The preparation process of the plasma-etch-resistant ceramic of the present embodiment is as follows:

[0065] According to mass percentage, weigh 88.0% nanometer Y 2 O 3 Powder and 12.0% Nanoscale ZrO 2 The powder is placed in a ball milling tank for wet ball milling and mixing. The ball milling time is 6 hours. After ball milling, the slurry is placed in an oven for drying until the weight deviation of the two times before and after is not higher than 0.01%, and then passed through a 100-mesh sieve. The sieved powder was dry-pressed, and the pressing pressure was controlled at 300MPa. Finally, the preformed product is put into a vacuum sintering furnace for sintering. First, it is heated to 1400°C at a heating rate of 5°C / min, kept for 1 hour, and then heated to 1800°C at a heating rate of 2°C / min, and kept for 1 hour. After cooling, the plasma-etching-resistant ceramic of this embodiment is obtained.

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Abstract

The invention relates to a plasma etching resistant ceramic, a preparation method thereof and plasma etching equipment. The preparation method of the above-mentioned plasma etching-resistant ceramics includes the following steps: by mass percentage, the following raw materials are weighed: 64.7% to 100% of nanoscale yttrium oxide powder and 0% to 35.3% of nanoscale zirconia powder, and the nanoscale oxidized The purity of the yttrium powder is not lower than 90.0%; the raw materials are sintered to obtain plasma-etching resistant ceramics, wherein the sintering temperature is 1600°C-2000°C, and the sintering time is 1h-2h. The preparation method of the above-mentioned plasma etching-resistant ceramics can make the prepared ceramics have good etching resistance, high density and good mechanical properties.

Description

technical field [0001] The invention relates to the field of ceramics, in particular to a plasma etching resistant ceramic, a preparation method and plasma etching equipment. Background technique [0002] As the semiconductor integrated circuit industry continues to develop in wafer manufacturing, the distance between transistors is rapidly shrinking to 32nm, 25nm, and even 7nm. The shrinking distance between transistors means that the impact of impurities introduced during wafer fabrication can be huge. Wafer etching is a key step in wafer manufacturing. High-density plasma accelerates a physical and chemical reaction with the wafer through a magnetic field to achieve the purpose of etching. During this process, the etching gas inevitably reacts with the etching cavity. Once the generated particles fall on the wafer, it will cause fatal defects in the wafer. Therefore, the preparation of excellent plasma etching resistance materials is a key factor in the preparation of mi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/505C04B35/622C04B35/64C04B35/645H01J37/32
CPCC04B35/505C04B35/622C04B35/64C04B35/645H01J37/32467C04B2235/3244C04B2235/5454C04B2235/6562C04B2235/6567C04B2235/658C04B2235/6581C04B2235/96H01J2237/334
Inventor 陈鹏谭毅成
Owner SHENZHEN SUNTECH ADVANCED CERAMICS
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