Cd3Cl2O2 thin film, preparation method thereof and thin-film solar cell
A technology for preparing solar cells and thin films, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as insufficient uniformity and flatness of thin films, unsuitability for large-scale production, and complicated preparation methods, and achieve good battery quality and high production efficiency. The effect of high rate and high light transmittance
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[0021] A kind of Cd of the present invention 3 Cl 2 o 2 Thin film preparation method, preparation of Cd by spray pyrolysis 3 Cl 2 o 2 The specific steps of thin film include:
[0022] Step S1: dissolving cadmium chloride in deionized water, stirring for 30 minutes, and configuring an aqueous solution of cadmium chloride;
[0023] Step S2: Put the clean substrate on the heating table, and spray it for 5-40 minutes at a liquid feeding rate of 0.5-2mL / min through ultrasonic spray equipment to form a uniform and flat Cd 3 Cl 2 o 2 film;
[0024] Step S3: After spraying, anneal the film for 10 to 30 minutes, wherein the concentration of the cadmium chloride solution in step S1 is 0.1 to 10 mg / mL, the temperature of the heating stage in step S2 is 100 to 500 °C, and the distance between the nozzle and the substrate 10-15cm, Cd 3 Cl 2 o 2 The thickness of the film is 20-200nm, and the annealing temperature is 200-500°C.
[0025] Such as image 3 As shown, the diffractio...
Embodiment 1
[0045] Embodiment 1: The preparation process of the positive structure thin film solar cell of embodiment 1 is:
[0046] (1) Wash the ITO conductive glass with detergent and deionized water for 15 minutes to remove grease and organic matter, then ultrasonically wash it with deionized water, acetone, and ethanol for 10 minutes, and dry it with nitrogen gas for use;
[0047] (2) Put the clean ITO conductive glass on a 400°C heating table, spray 2mg / mL cadmium chloride aqueous solution by spray pyrolysis, the distance between the nozzle and the substrate is 15cm, and spray at a speed of 2mL / min for 10min to prepare 150nm thick Cd 3 Cl 2 o 2 Thin film, finally annealed at 400°C for 20min;
[0048] (3) in Cd 3 Cl 2 o 2 500nm thick Sb was prepared by rapid thermal evaporation on the thin film at 510°C for 60s 2 Se 3 film;
[0049] (4) in Sb 2 Se 3 The P3HT film with a thickness of 80-100nm was prepared by spin coating on the film, and then annealed at 120°C for 10 minutes...
Embodiment 2
[0051] Embodiment 2: The preparation process of the positive structure thin film solar cell of embodiment 2 is:
[0052] (1) Wash the ITO conductive glass with detergent and deionized water for 15 minutes to remove grease and organic matter, then ultrasonically wash it with deionized water, acetone, and ethanol for 10 minutes, and dry it with nitrogen gas for use;
[0053] (2) Put the clean ITO conductive glass on a 400°C heating table, spray 2mg / mL cadmium chloride aqueous solution by spray pyrolysis, the distance between the nozzle and the substrate is 15cm, and spray at a speed of 2mL / min for 10min to prepare 150nm thick Cd 3 Cl 2 o 2 Thin film, finally annealed at 400°C for 20min;
[0054] (3) Take 90 μl of 0.1mmol / mL lead bromide dissolved in N,N-dimethylformamide and spin-coat it on Cd under the condition of 2000r.p.m. and 30s. 3 Cl 2 o 2 On the electron transport layer, and then placed under the heating platform at 80 ° C for 60 min, take 90 μl of 0.07 mmol / mL ces...
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