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Cd3Cl2O2 thin film, preparation method thereof and thin-film solar cell

A technology for preparing solar cells and thin films, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as insufficient uniformity and flatness of thin films, unsuitability for large-scale production, and complicated preparation methods, and achieve good battery quality and high production efficiency. The effect of high rate and high light transmittance

Active Publication Date: 2020-09-15
NORTHEAST DIANLI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently commonly used electron transport layers include zinc oxide, titanium dioxide, tin dioxide, cadmium sulfide, etc. The problems of these materials are: complex preparation methods; insufficient uniformity and flatness of the film, low light transmittance; relatively high cost, Not suitable for large-scale production; poor photoelectric performance

Method used

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  • Cd3Cl2O2 thin film, preparation method thereof and thin-film solar cell
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  • Cd3Cl2O2 thin film, preparation method thereof and thin-film solar cell

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preparation example Construction

[0021] A kind of Cd of the present invention 3 Cl 2 o 2 Thin film preparation method, preparation of Cd by spray pyrolysis 3 Cl 2 o 2 The specific steps of thin film include:

[0022] Step S1: dissolving cadmium chloride in deionized water, stirring for 30 minutes, and configuring an aqueous solution of cadmium chloride;

[0023] Step S2: Put the clean substrate on the heating table, and spray it for 5-40 minutes at a liquid feeding rate of 0.5-2mL / min through ultrasonic spray equipment to form a uniform and flat Cd 3 Cl 2 o 2 film;

[0024] Step S3: After spraying, anneal the film for 10 to 30 minutes, wherein the concentration of the cadmium chloride solution in step S1 is 0.1 to 10 mg / mL, the temperature of the heating stage in step S2 is 100 to 500 °C, and the distance between the nozzle and the substrate 10-15cm, Cd 3 Cl 2 o 2 The thickness of the film is 20-200nm, and the annealing temperature is 200-500°C.

[0025] Such as image 3 As shown, the diffractio...

Embodiment 1

[0045] Embodiment 1: The preparation process of the positive structure thin film solar cell of embodiment 1 is:

[0046] (1) Wash the ITO conductive glass with detergent and deionized water for 15 minutes to remove grease and organic matter, then ultrasonically wash it with deionized water, acetone, and ethanol for 10 minutes, and dry it with nitrogen gas for use;

[0047] (2) Put the clean ITO conductive glass on a 400°C heating table, spray 2mg / mL cadmium chloride aqueous solution by spray pyrolysis, the distance between the nozzle and the substrate is 15cm, and spray at a speed of 2mL / min for 10min to prepare 150nm thick Cd 3 Cl 2 o 2 Thin film, finally annealed at 400°C for 20min;

[0048] (3) in Cd 3 Cl 2 o 2 500nm thick Sb was prepared by rapid thermal evaporation on the thin film at 510°C for 60s 2 Se 3 film;

[0049] (4) in Sb 2 Se 3 The P3HT film with a thickness of 80-100nm was prepared by spin coating on the film, and then annealed at 120°C for 10 minutes...

Embodiment 2

[0051] Embodiment 2: The preparation process of the positive structure thin film solar cell of embodiment 2 is:

[0052] (1) Wash the ITO conductive glass with detergent and deionized water for 15 minutes to remove grease and organic matter, then ultrasonically wash it with deionized water, acetone, and ethanol for 10 minutes, and dry it with nitrogen gas for use;

[0053] (2) Put the clean ITO conductive glass on a 400°C heating table, spray 2mg / mL cadmium chloride aqueous solution by spray pyrolysis, the distance between the nozzle and the substrate is 15cm, and spray at a speed of 2mL / min for 10min to prepare 150nm thick Cd 3 Cl 2 o 2 Thin film, finally annealed at 400°C for 20min;

[0054] (3) Take 90 μl of 0.1mmol / mL lead bromide dissolved in N,N-dimethylformamide and spin-coat it on Cd under the condition of 2000r.p.m. and 30s. 3 Cl 2 o 2 On the electron transport layer, and then placed under the heating platform at 80 ° C for 60 min, take 90 μl of 0.07 mmol / mL ces...

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Abstract

The invention relates to a Cd3Cl2O2 thin film, a preparation method thereof and a thin film solar cell. The preparation method of the Cd3Cl2O2 thin film is characterized in that a spray pyrolysis method is adopted, and the prepared Cd3Cl2O2 thin film is used as an electron transport layer. The thin-film solar cell has a positive structure and an inverted structure. The advantages are that the Cd3Cl2O2 thin film prepared by adopting the spray pyrolysis method is uniform and flat, high in light transmittance and high in conductivity, and the preparation method is simple in step, low in cost, high in yield and stable in property; the Cd3Cl2O2 thin film is used as the electron transport layer of the thin-film solar cell, so that the device performance of the solar cell can be effectively improved, the production cost of the solar cell is reduced, and relatively high industrial application value is achieved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and thin film solar cells, in particular to a Cd 3 Cl 2 o 2 Thin film and its preparation method and thin film solar cell. Background technique [0002] With the development of the global economy, energy consumption is increasing, and non-renewable energy sources such as oil, coal, and natural gas are becoming less and less, and energy problems are becoming increasingly severe. As a renewable energy source, the sun is inexhaustible and environmentally friendly, so the development of solar cells is of great significance. Thin-film solar cells have also been developed rapidly in recent years, such as cadmium telluride thin-film solar cells, perovskite thin-film solar cells, antimony selenide thin-film solar cells, antimony sulfide thin-film solar cells, etc. Although the efficiency of thin-film solar cells has been rapidly improved, there is still a certain gap compared with indu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0328H01L31/0216H01L31/042
CPCH01L31/18H01L31/0328H01L31/02167H01L31/042Y02E10/50Y02P70/50
Inventor 周静张鑫童曹宇孟丹唐喆庆袁浩王莹毓
Owner NORTHEAST DIANLI UNIVERSITY