Silicon carbide-silicon dioxide /diamond multi-layer composite self-supporting film and preparation method
A multi-layer composite, silicon dioxide technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problem that infrared optical window materials cannot meet the requirements of use
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[0039] The preparation method of the above-mentioned high transmittance anti-oxidation silicon carbide-silicon dioxide / diamond multilayer composite self-supporting film comprises the following steps:
[0040] 1) Using the plasma-assisted chemical vapor deposition method, the mixed gas containing silicon carbon, hydrogen and oxygen is used as the reaction gas to prepare SiC and SiO on the surface of the graphite substrate. 2 SiC-SiO 2 Composite layer, the specific preparation method is: the graphite is ultrasonically cleaned with deionized water and absolute ethanol respectively, and dried with hot air; the cleaned graphite is placed in a titanium mold containing grooves, and the height of the upper surface of the graphite is lower than the edge of the titanium mold The height of the boss is 0-3mm; the graphite and titanium molds are put into the microwave plasma-assisted chemical vapor deposition experimental device as a whole, and the furnace is vacuumed to 9×10 -4 After the...
Embodiment 1
[0048] 1) Preparation of SiC-SiO 2 composite layer 2
[0049] Clean the surface of the graphite substrate, use the graphite substrate 1 with a diameter of 60 mm and a thickness of 3 mm as the substrate, put it into absolute ethanol for ultrasonic cleaning for 10 minutes, and dry it with hot air;
[0050] Put the cleaned graphite substrate 1 into a titanium mold 4 with an outer diameter of 65mm, a height of 10mm, a groove diameter of 60.1mm, and a depth of 3.1mm, and then place it in the reaction chamber of the microwave plasma-assisted chemical vapor deposition experimental device The central position of the abutment, vacuumize after closing the cavity;
[0051] The vacuum degree of the cavity is pumped to 9×10 -4 After Pa is below, pass H 2 , the flow rate is controlled to 220sccm, when the chamber pressure rises to 8kPa, the microwave power is set to 1kW, the microwave power is turned on, the microwave plasma is excited, and TMS and O 2 , the flow rate is controlled to ...
Embodiment 2
[0068] 1) Preparation of SiC-SiO 2 composite layer 2
[0069] Clean the surface of the graphite substrate: use the graphite substrate 1 with a diameter of 60 mm and a thickness of 4 mm as the substrate, put it into absolute ethanol for ultrasonic cleaning for 10 minutes, and dry it with hot air;
[0070] Put the cleaned graphite substrate 1 into a titanium mold 4 with an outer diameter of 65 mm, a height of 10 mm, a groove diameter of 60.1 mm, and a depth of 4.1 mm, and then place it in the reaction chamber of the microwave plasma-assisted chemical vapor deposition experimental device The central position of the abutment, vacuumize after closing the cavity;
[0071] The vacuum degree of the cavity is pumped to 9×10 -4 After Pa is below, pass H 2 , the flow rate is controlled at 200 sccm, when the chamber pressure rises to 2kPa, the microwave power is set to 10kW, the microwave power is turned on, the microwave plasma is excited, and TMS and O 2 , the flow rate is controlle...
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