Production process of hafnium disilicide

Abstract

The invention discloses a production process of hafnium disilicide. The production process comprises the following steps: ball-milling and mixing zirconium dioxide powder and silicon powder under a vacuum condition, briquetting by using a hydraulic machine, sintering and finishing in a vacuum sintering furnace, removing white silicon dioxide powder coated on the surface of hafnium, ball-milling ina vacuum ball mill, adding sodium hydroxide, adding distilled water with the temperature of 60 DEG C, and drying to obtain silicon-containing hafnium powder; detecting the content of silicon in the silicon-containing hafnium powder, adding silicon powder according to the content of silicon in the hafnium powder, carrying out ball milling for 5 hours in a vacuum ball mill under the protection of inert argon, putting into a vacuum self-propagating combustion furnace, vacuumizing, heating a thermal electrode, igniting the hafnium powder, making the hafnium powder and the silicon powder carry outa self-propagating combination reaction to obtain hafnium disilicide. Hafnium dioxide powder is used as a raw material, and the raw material cost is lower than sponge hafnium cost; according to the method, the whole process is reasonable in technology and suitable for industrial production, the obtained hafnium disilicide product is high in purity, and the alloying degree can reach 100%.

Description

technical field [0001] The invention relates to a production process of hafnium disilicide. Background technique [0002] Hafnium disilicide is a transition metal silicide. It has the characteristics of high melting point, high hardness, high wear resistance and oxidation resistance. It is used as ceramic material and various high temperature resistant parts and functional parts. Hafnium disilicide nanomaterials show special electrical and optical properties, and have potential application value in the field of optoelectronics. [0003] At present, the methods of hafnium disilicide mainly include the direct synthesis of hafnium sponge and the re-synthesis of metal silicon by carbon reduction of hafnium dioxide. The direct synthesis of hafnium sponge is the direct synthesis of hafnium sponge and silicon as raw materials. Remelting with hafnium is not good, silicon is in a liquid state, the fluidity is not good, it cannot be fully combined with silicon, the degree of alloying...

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Problems solved by technology

[0003] At present, the methods of hafnium disilicide mainly include the direct synthesis of hafnium sponge and the re-synthesis of metal silicon by carbon reduction of hafnium dioxide. The direct synthesis of hafnium sponge is the direct synthesis of hafnium sponge and silicon as raw materials. Remelting with hafnium is not good, silicon is in a liquid state, the fluidity is not good, it cannot be fully combined with silicon, the degree of alloying is not high, and there is elemental silicon

Carbon reduction of hafnium dioxide to produce metal silicon and resynthesis method is to use elemental carbon to reduce hafnium dioxide to produce metal hafnium. During the reduction process, in order to fully reduce hafnium dioxide, only excess carbon is required, so that free carbon exists in metal hafnium. Silicon carbide impurities will be produced during the process of compounding with silicon; if the amount of carbon is insufficient, there will be a small amount of hafnium oxide that has not been reduced. After compounding with silicon, there will be hafnium oxide, which will affect the purity of the product and cannot reach the high-purity standard.

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