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Preparation method of polyurethane polished gasket layer

A polyurethane and polishing pad technology, applied in the field of polyurethane applications, can solve the problems of inability to adapt to the miniaturization process and strict flatness requirements, poor wear resistance, poor mechanical strength, and scratches and defects left by integrated circuits

Pending Publication Date: 2020-10-20
SHANDONG INOV POLYURETHANE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The surface layer of the polishing pad is currently made of polyurethane elastomer material. Considering the existence of the polishing liquid in the polishing process, the current layer of the polyurethane polishing pad is mainly polytetrahydrofuran ether type that is resistant to hydrolysis and acid and alkali. Elastomers, but often perform poorly in terms of wear resistance and mechanical strength
The polishing effect of CMP relies on the effect of abrasive grains, which can easily leave scratches and defects on the integrated circuit, which cannot adapt to the current miniaturization process and strict flatness requirements.

Method used

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  • Preparation method of polyurethane polished gasket layer
  • Preparation method of polyurethane polished gasket layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Preparation of prepolymer components

[0029] Dehydrate 69.4g of PTMG1000, 0.3g of 1076 and 0.3g of hollow polymer microspheres at a temperature of 100°C and a vacuum of 0.095MPa to a moisture content of 0.03%, and react with 30g of TDI-100 at 75°C for 2.5 h, to obtain a prepolymer with a content of 8.8%, through the method of thin film evaporation, control the temperature at 135°C during distillation to finally obtain a low-free prepolymer with a mass content of isocyanate of 6.2%, and a free diisocyanate monomer content of less than 0.1%. body.

[0030] (2) Preparation of polyurethane polishing pad layer

[0031] Heat the prepolymer to 80°C, then melt XYlink 1604 at 110°C, mix thoroughly according to the ratio of prepolymer / XYlink 1604=100 / 16.3, pour it into a mold, open the mold, and vulcanize to obtain a polyurethane polishing pad with a Shore hardness of 50D lamellae.

Embodiment 2

[0033] (1) Preparation of prepolymer components

[0034] 52.7g of PTMG1000, 8.4g of PTMG250, 0.3g of 1076 and 0.3g of hollow polymer microspheres were dehydrated to a moisture content of 0.03% at a temperature of 100°C and a vacuum of 0.095MPa, and 38.3g of TDI-100 in React at 75°C for 2.5 hours to obtain a prepolymer with a content of 11.2%. By thin film evaporation, the temperature is controlled at 135°C during distillation to finally obtain a mass content of isocyanate of 8.0%, and a free diisocyanate monomer content of less than 0.1 % low free prepolymer.

[0035] (2) Preparation of polyurethane polishing pad layer

[0036] Heat the prepolymer to 80°C, then melt XYlink 740M at 135°C, mix thoroughly according to the ratio of prepolymer / XYlink 740M=100 / 26.9, pour it into a mold, open the mold, and vulcanize to obtain a polyurethane polishing pad with a Shore hardness of 60D lamellae.

Embodiment 3

[0038] (1) Preparation of prepolymer components

[0039] 34.5g of PTMG650, 8.9g of PTMG250, 0.3g of 1076 and 0.3g of hollow polymer microspheres were dehydrated to a moisture content of 0.03% at a temperature of 100°C and a vacuum of 0.095MPa, and 56g of MDI-100 at 75 React at ℃ for 2.5 hours to obtain a prepolymer with a content of 11.4%. By thin film evaporation, the temperature is controlled at 150℃ during distillation to finally obtain an isocyanate mass content of 8.5%, and a free diisocyanate monomer content of less than 0.1%. low free prepolymer.

[0040] (2) Preparation of polyurethane polishing pad layer

[0041] Heat the prepolymer to 80°C, then melt XYlink 740M at 135°C, mix thoroughly according to the ratio of prepolymer / XYlink 740M=100 / 28.6, pour it into a mold, open the mold, and vulcanize to obtain a polyurethane polishing pad with a Shore hardness of 65D lamellae.

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Abstract

The invention belongs to the technical field of polyurethane application, and particularly relates to a preparation method of a polyurethane polished gasket layer. The preparation method comprises thefollowing steps: (1) mixing polyol, hollow polymer microspheres and an antioxidant to obtain a prepolymer with an isocyanate mass content of 7.5-15%; (2) obtaining a low-free prepolymer with a free diisocyanate monomer content of less than 0.1% through a film evaporation method; and (3) fully mixing the low-free prepolymer component with a chain extender component, pouring into a mold, opening the mold, and vulcanizing to obtain the polyurethane polished gasket layer. The adopted low-free polyurethane prepolymer has the advantages of good fluidity, long gelation time and high forming speed; the physical and mechanical properties of the polyurethane polished gasket layer are remarkably improved, meanwhile, by adopting an oligomer amine or alcohol curing agent, the forming process of the product is further improved, an excellent polishing effect is achieved, and the requirement of the market for a high-performance polyurethane polished gasket is met.

Description

technical field [0001] The invention belongs to the technical field of polyurethane application, and in particular relates to a preparation method of a polyurethane polishing pad layer. Background technique [0002] Chemical-mechanical polishing (CMP) technology is currently the best process technology to achieve global planarization. It removes the chemical reactants formed on the surface of polished parts through mechanical friction, and is mainly used for ultra-precision surfaces (such as silicon wafers, micro-integrated Circuits, memories, etc.) to obtain a smooth surface technology. [0003] The surface layer of the polishing pad is currently made of polyurethane elastomer material. Considering the existence of the polishing liquid in the polishing process, the current layer of the polyurethane polishing pad is mainly polytetrahydrofuran ether type that is resistant to hydrolysis and acid and alkali. Elastomers, but they often perform poorly in terms of wear resistance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G18/66C08G18/48C08G18/32C08G18/10C08G18/12C08K7/28C08K5/134C08J5/18B24D18/00C08L75/08
CPCC08G18/6685C08G18/4854C08G18/3206C08G18/10C08G18/12C08K7/28C08K5/1345C08J5/18B24D18/009C08J2375/08
Inventor 李涛房玉俊孟平宿金明
Owner SHANDONG INOV POLYURETHANE