AlN-based piezoelectric MEMS hydrophone and preparation method thereof

A hydrophone, piezoelectric technology, applied to the manufacture/assembly of piezoelectric/electrostrictive devices, material selection for piezoelectric devices or electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices and other directions, which can solve the problems of weak piezoelectric effect and low dielectric constant

Pending Publication Date: 2020-10-23
ZHONGBEI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Quartz is a single crystal, with high Q value and high temperature stability, but low dielectric constant, weak pi

Method used

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  • AlN-based piezoelectric MEMS hydrophone and preparation method thereof
  • AlN-based piezoelectric MEMS hydrophone and preparation method thereof
  • AlN-based piezoelectric MEMS hydrophone and preparation method thereof

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Embodiment Construction

[0037] In order to make the purpose of the present invention and the advantages of the technical solutions more clear, the implementation manners of the present invention will be further described in detail below.

[0038]A piezoelectric MEMS hydrophone based on AlN, the sensor is composed of multiple array elements, each array element is a sensitive unit, and all the array elements are connected to each other with electrodes, which can increase the collection of charges generated by the acoustic signal , Accumulation, and then improve the sensitivity and linearity of the sensor. From top to bottom, the sensitive unit is a protective layer, an upper electrode, an AlN piezoelectric layer, a lower electrode layer, and a piezoelectric seed layer. The sensitive unit is deposited on the device silicon layer of SOI, and the vibration film is released by deep silicon etching. The specific structure includes an SOI substrate 1, a lower electrode layer 2, an AlN piezoelectric layer 3,...

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Abstract

The invention discloses an AIN-based piezoelectric MEMS hydrophone and a preparation method thereof. The method comprises the steps that sputtered Mo/AlN/Mo on a device silicon layer of an SOI servesas a lower electrode layer, a piezoelectric layer, an upper electrode layer and a SiO2 protection layer on the surface of the device, and deep silicon etching is conducted on the back of the SOI to aburied oxide layer of the SOI to release a vibration film. The maximum output is obtained by optimizing the thickness of the AlN piezoelectric film and patterning the upper electrode. The piezoelectric hydrophone has the advantages of being small in size, good in linearity, high in sensitivity and capable of being manufactured in batches.

Description

technical field [0001] The invention relates to the field of piezoelectric hydrophones, in particular to a low-frequency, high-sensitivity MEMS piezoelectric hydrophone using AlN as a piezoelectric material. Background technique [0002] With the rapid development of MEMS technology, more and more people pay attention to the miniaturization and low power consumption sensors. As a device for detecting underwater acoustic signals, hydrophones have also developed rapidly with the development of MEMS technology. Among them, piezoelectric hydrophones have gradually become an important form of hydrophones due to their unique performance advantages. Piezoelectric material is a kind of material with piezoelectric effect, which can realize the conversion between stress and electric charge. The positive piezoelectric effect refers to the generation of electric charge by the piezoelectric material under the action of mechanical stress, and the inverse piezoelectric effect refers to t...

Claims

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Application Information

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IPC IPC(8): H01L41/18B81B7/02H01L41/297H01L41/33
CPCB81B7/02H10N30/85H10N30/067H10N30/08
Inventor 张志东薛晨阳郑永秋崔丹凤张增星王强赵龙杨婷婷
Owner ZHONGBEI UNIV
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