Magnetic random access memory and forming method thereof

Abstract

The invention discloses a magnetic random access memory and a forming method thereof, and the magnetic random access memory comprises: a substrate, wherein a conductive contact pad is formed on the surface of the substrate; and a magnetic storage layer which is positioned on the surface of the substrate, wherein the magnetic storage layer comprises at least two sub-storage layers stacked on the surface of the substrate, the magnetic storage layer internally comprises a plurality of magnetic storage units which vertically penetrate through the sub-storage layers and are connected with the conductive contact pad, the plurality of magnetic storage units are arranged in an array form of rhombic array units, each magnetic storage unit comprises a magnetic tunnel junction, each sub-storage layerinternally comprises at least one magnetic tunnel junction, a plurality of access transistors are formed in the substrate and are in one-to-one correspondence with the storage units, grid electrodesof the access transistors are arranged around a channel region, and drain electrodes of the access transistors are connected to the conductive contact pad. The magnetic random access memory has relatively high performance.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic random access memory and a forming method thereof. Background technique [0002] Magnetic random access memory (MARM) is based on the integration of silicon-based complementary oxide semiconductor (CMOS) and magnetic tunnel junction (MTJ) technology. It is a non-volatile memory that has the high-speed read and write capabilities of static random access memory, and High integration of DRAM. [0003] Please refer to figure 1 , is a structural schematic diagram of an existing magnetic random access memory. [0004] The MRAM includes an access transistor 110 and a magnetic tunnel junction 120 , and the magnetic tunnel junction 120 includes a pinned layer 121 , a tunneling layer 122 and a free layer 123 . The drain 111 of the access transistor 110 is connected to the fixed layer 121 of the magnetic tunnel junction 120, and the free layer 123 of the magnetic tunnel junctio...

AI Technical Summary

Problems solved by technology

[0006] In the existing process technology nodes, the density of magnetic tunnel junctions per unit area of ​​MRAM is relatively high. During the process of etching to form magnetic tunnel junctions, it is easy to cause damage to the magnetic tunnel junctions and affect the chip yield.

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